Iii Nitride Semiconductors Electrical Structural And Defects Properties

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Iii Nitride Semiconductors Electrical Structural And Defects Properties

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Author : M.O. Manasreh
language : en
Publisher: Elsevier
Release Date : 2000-12-06

Iii Nitride Semiconductors Electrical Structural And Defects Properties written by M.O. Manasreh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-06 with Science categories.

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Iii Nitride Semiconductors

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Author : Hongxing Jiang
language : en
Publisher: CRC Press
Release Date : 2002-06-28

Iii Nitride Semiconductors written by Hongxing Jiang and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-06-28 with Technology & Engineering categories.

The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices. Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.

Oxide And Nitride Semiconductors

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Author : Takafumi Yao
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-03-20

Oxide And Nitride Semiconductors written by Takafumi Yao and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-03-20 with Technology & Engineering categories.

This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Iii V Nitride Semiconductors

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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2022-10-30

Iii V Nitride Semiconductors written by Edward T. Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-10-30 with Technology & Engineering categories.

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Properties Of Group Iii Nitrides

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Author : James H. Edgar
language : en
Publisher: Institution of Electrical Engineers
Release Date : 1994

Properties Of Group Iii Nitrides written by James H. Edgar and has been published by Institution of Electrical Engineers this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Aluminum categories.

The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.

Oxide And Nitride Semiconductors

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Author : Takafumi Yao
language : en
Publisher: Springer
Release Date : 2009-04-29

Oxide And Nitride Semiconductors written by Takafumi Yao and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-04-29 with Technology & Engineering categories.

This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Gan Based Materials And Devices

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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004

Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Dilute Nitride Semiconductors

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Author : Mohamed Henini
language : en
Publisher: Elsevier
Release Date : 2004-12-15

Dilute Nitride Semiconductors written by Mohamed Henini and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-12-15 with Technology & Engineering categories.

This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Nitrides With Nonpolar Surfaces

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Author : Tanya Paskova
language : en
Publisher: John Wiley & Sons
Release Date : 2008-03-31

Nitrides With Nonpolar Surfaces written by Tanya Paskova and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-03-31 with Technology & Engineering categories.

This text discusses in detail the present stage of development of nonpolar nitrides, with special emphasis on the three main topics of crystal growth, properties, and device studies. All nonpolar nitride materials and all known growth techniques which are currently under strong investigation are covered.

Led Lighting

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Author : T. Q. Khan
language : en
Publisher: John Wiley & Sons
Release Date : 2015-02-09

Led Lighting written by T. Q. Khan and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-02-09 with Science categories.

Promoting the design, application and evaluation of visually and electrically effective LED light sources and luminaires for general indoor lighting as well as outdoor and vehicle lighting, this book combines the knowledge of LED lighting technology with human perceptual aspects for lighting scientists and engineers. After an introduction to the human visual system and current radiometry, photometry and color science, the basics of LED chip and phosphor technology are described followed by specific issues of LED radiometry and the optical, thermal and electric modeling of LEDs. This is supplemented by the relevant practical issues of pulsed LEDs, remote phosphor LEDs and the aging of LED light sources. Relevant human visual aspects closely related to LED technology are described in detail for the photopic and the mesopic range of vision, including color rendering, binning, whiteness, Circadian issues, as well as flicker perception, brightness, visual performance, conspicuity and disability glare. The topic of LED luminaires is discussed in a separate chapter, including retrofit LED lamps, LED-based road and street luminaires and LED luminaires for museum and school lighting. Specific sections are devoted to the modularity of LED luminaires, their aging and the planning and evaluation methods of new LED installations. The whole is rounded off by a summary and a look towards future developments.