Nanoscale Memory Repair
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Nanoscale Memory Repair
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Author : Masashi Horiguchi
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-01-11
Nanoscale Memory Repair written by Masashi Horiguchi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-11 with Technology & Engineering categories.
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.
Nanoscale Semiconductor Memories
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Author : Santosh K. Kurinec
language : en
Publisher: CRC Press
Release Date : 2017-07-28
Nanoscale Semiconductor Memories written by Santosh K. Kurinec and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-28 with Technology & Engineering categories.
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Extreme Statistics In Nanoscale Memory Design
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Author : Amith Singhee
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-09-09
Extreme Statistics In Nanoscale Memory Design written by Amith Singhee and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-09-09 with Technology & Engineering categories.
Knowledge exists: you only have to ?nd it VLSI design has come to an important in?ection point with the appearance of large manufacturing variations as semiconductor technology has moved to 45 nm feature sizes and below. If we ignore the random variations in the manufacturing process, simulation-based design essentially becomes useless, since its predictions will be far from the reality of manufactured ICs. On the other hand, using design margins based on some traditional notion of worst-case scenarios can force us to sacri?ce too much in terms of power consumption or manufacturing cost, to the extent of making the design goals even infeasible. We absolutely need to explicitly account for the statistics of this random variability, to have design margins that are accurate so that we can ?nd the optimum balance between yield loss and design cost. This discontinuity in design processes has led many researchers to develop effective methods of statistical design, where the designer can simulate not just the behavior of the nominal design, but the expected statistics of the behavior in manufactured ICs. Memory circuits tend to be the hardest hit by the problem of these random variations because of their high replication count on any single chip, which demands a very high statistical quality from the product. Requirements of 5–6s (0.
Extreme Statistics In Nanoscale Memory Design
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Author : Amith Singhee
language : en
Publisher: Springer
Release Date : 2010-09-17
Extreme Statistics In Nanoscale Memory Design written by Amith Singhee and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-09-17 with Technology & Engineering categories.
Knowledge exists: you only have to ?nd it VLSI design has come to an important in?ection point with the appearance of large manufacturing variations as semiconductor technology has moved to 45 nm feature sizes and below. If we ignore the random variations in the manufacturing process, simulation-based design essentially becomes useless, since its predictions will be far from the reality of manufactured ICs. On the other hand, using design margins based on some traditional notion of worst-case scenarios can force us to sacri?ce too much in terms of power consumption or manufacturing cost, to the extent of making the design goals even infeasible. We absolutely need to explicitly account for the statistics of this random variability, to have design margins that are accurate so that we can ?nd the optimum balance between yield loss and design cost. This discontinuity in design processes has led many researchers to develop effective methods of statistical design, where the designer can simulate not just the behavior of the nominal design, but the expected statistics of the behavior in manufactured ICs. Memory circuits tend to be the hardest hit by the problem of these random variations because of their high replication count on any single chip, which demands a very high statistical quality from the product. Requirements of 5–6s (0.
Robust Computing With Nano Scale Devices
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Author : Chao Huang
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-11
Robust Computing With Nano Scale Devices written by Chao Huang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-11 with Technology & Engineering categories.
Robust Nano-Computing focuses on various issues of robust nano-computing, defect-tolerance design for nano-technology at different design abstraction levels. It addresses both redundancy- and configuration-based methods as well as fault detecting techniques through the development of accurate computation models and tools. The contents present an insightful view of the ongoing researches on nano-electronic devices, circuits, architectures, and design methods, as well as provide promising directions for future research.
Ultra Low Voltage Nano Scale Memories
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Author : Kiyoo Itoh
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-09-04
Ultra Low Voltage Nano Scale Memories written by Kiyoo Itoh and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-09-04 with Technology & Engineering categories.
Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.
Embedded Memories For Nano Scale Vlsis
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Author : Kevin Zhang
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-04-21
Embedded Memories For Nano Scale Vlsis written by Kevin Zhang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-04-21 with Technology & Engineering categories.
Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges.
Nanoelectronics
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Author : Ray Robinson &
language : en
Publisher: Scientific e-Resources
Release Date : 2019-05-16
Nanoelectronics written by Ray Robinson & and has been published by Scientific e-Resources this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-16 with categories.
Nanoelectronics is one of the most important technologies of nanotechnology. It plays vital role in the field of engineering and electronics. Nanoelectronics make use of scientific techniques at atomic scale for developing the nano machines. The main target is to reduce the size, risk factor and surface areas of the materials and molecules. Machines under nanoelectronic process under goes the long range of manufacturing steps each with accurate molecular treatment. Semiconductor electronics have seen a sustained exponential reduce in size and cost and a similar augment in performance and level of integration over the last thirty years. The Silicon Roadmap is laid out for the next ten years. After that, either economical or physical barriers will pose a huge challenge. The former is connected to the difficulty of making a profit in view of the exorbitant costs of building the necessary manufacturing capabilities, if present day technologies are extrapolated. The latter is a direct consequence of the shrinking device size, leading to physical phenomena impeding the operation of current devices. The transistor is the building block to a modern processor. The current silicon designed transistors are going to hit their physical limit- not merely the actualization of Moore's law but also the problems with heat dissipation, wire connections and the materials we use to create them. Hence nanotechnology helps us to look at new ways information processing at a better speed and measure. A promising alternative to the imminent challenges from the CMOS based computing is to focus on other alternatives of nano scale precision. Chemically Assembled Electronic Nanotechnology (CAEN) is a promising technology, which uses self-alignment to construct electronic circuits from nano scale devices that take advantage of quantum mechanical effects. This book is intended as an introduction to the field of nanotechnology for nanoelectronics vendors, researchers and students who want to start thinking about the potential opportunities afforded by these emerging scientific developments.
Green Computing With Emerging Memory
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Author : Takayuki Kawahara
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-09-26
Green Computing With Emerging Memory written by Takayuki Kawahara and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-26 with Technology & Engineering categories.
This book describes computing innovation, using non-volatile memory for a sustainable world. It appeals to both computing engineers and device engineers by describing a new means of lower power computing innovation, without sacrificing performance over conventional low-voltage operation. Readers will be introduced to methods of design and implementation for non-volatile memory which allow computing equipment to be turned off normally when not in use and to be turned on instantly to operate with full performance when needed.
Data Storage At The Nanoscale
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Author : Gan Fuxi
language : en
Publisher: CRC Press
Release Date : 2015-02-09
Data Storage At The Nanoscale written by Gan Fuxi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-02-09 with Science categories.
In the big data era, data storage is one of the cores in the whole information chain, which includes production, transfer, sharing, and finally processing. Over the years, the growth of data volume has been explosive. Today, various storage services need memories with higher density and capacity. Moreover, information storage in the big data applic