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Positron Annihilation In Semiconductors


Author : Reinhard Krause-Rehberg
language : en
Publisher: Springer Science & Business Media
Release Date : 1999-01-01

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Download Positron Annihilation In Semiconductors written by Reinhard Krause-Rehberg and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-01-01 with Science categories.


The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.

Positron Annihilation In Semiconductors


Author : Reinhard Krause-Rehberg
language : en
Publisher: Springer Science & Business Media
Release Date : 1999-01-01

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Download Positron Annihilation In Semiconductors written by Reinhard Krause-Rehberg and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-01-01 with Science categories.


The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.

Positron Annihilation In Semiconductors


Author : Reinhard Krause-Rehberg
language : en
Publisher: Springer
Release Date : 2010-12-01

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Download Positron Annihilation In Semiconductors written by Reinhard Krause-Rehberg and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-12-01 with Science categories.


This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

Some Ab Initio Studies Of Positron Annihilation In Semiconductors


Author :
language : en
Publisher:
Release Date : 1999

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Experimental Studies Of Positron Annihilation In Semiconductors


Author : 區皓良
language : en
Publisher: Open Dissertation Press
Release Date : 2017-01-27

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This dissertation, "Experimental Studies of Positron Annihilation in Semiconductors" by 區皓良, Ho-leung, Au, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123341 Subjects: Positron annihilation Semiconductors

Iii Nitride Semiconductors Electrical Structural And Defects Properties


Author : M.O. Manasreh
language : en
Publisher: Elsevier
Release Date : 2000-12-06

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Download Iii Nitride Semiconductors Electrical Structural And Defects Properties written by M.O. Manasreh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-06 with Science categories.


Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Positron Spectroscopy Of Solids


Author : Società italiana di fisica
language : en
Publisher: IOS Press
Release Date : 1995

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The lifetime of a positron inside a solid is normally less than a fraction of nanosecond. This is a very short time on a human scale, but is long enough to enable the positron to visit an extended region of the material, and to sense the atomic and electronic structure of the environment. Thus, we can inject a positron in a sample to draw from it some signal giving us information on the microscopic properties of the material. This idea has been successfully developed in a number of positron-based techniques of physical analysis, with resolution in energy, momentum, or position. The complex of these techniques is what we call now positron spectroscopy of solids. The field of application of the positron spectroscopy extends from advanced problems of solid-state physics to industrial applications in the area of characterization of high-tech materials. This volume focuses the attention on the physics that can be learned from positron-based methods, but also frames those methods in a wider context including other experimental approaches. It can be considered as a textbook on positron spectroscopy of solids, the sort of book that the newcomer takes for his approach to this field, but also as a useful research tool for the expert.