Fast Simulation Methods For Non Planar Phase And Multilayer Defects In Duv And Euv Photomasks For Lithography
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Fast Simulation Methods For Non Planar Phase And Multilayer Defects In Duv And Euv Photomasks For Lithography
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Author : Michael Christopher Lam
language : en
Publisher:
Release Date : 2005
Fast Simulation Methods For Non Planar Phase And Multilayer Defects In Duv And Euv Photomasks For Lithography written by Michael Christopher Lam and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Progress In Optics
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Author : Emil Wolf
language : en
Publisher: Elsevier
Release Date : 2012-09-05
Progress In Optics written by Emil Wolf and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-05 with Science categories.
In the 50 years since the first volume of Progress in Optics was published, optics has become one of the most dynamic fields of science. The volumes in this series that have appeared up to now contain more than 300 review articles by distinguished research workers, which have become permanent records for many important developments, helping optical scientists and optical engineers stay abreast of their fields. Comprehensive, in-depth reviews Edited by the leading authority in the field
Dissertation Abstracts International
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Author :
language : en
Publisher:
Release Date : 2006
Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Dissertations, Academic categories.
Simulation And Compensation Methods For Euv Lithography Masks With Buried Defects
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Author : Chris Heinz Clifford
language : en
Publisher:
Release Date : 2010
Simulation And Compensation Methods For Euv Lithography Masks With Buried Defects written by Chris Heinz Clifford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Modeling Innovations In Euv And Nanoimprint Lithography
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Author : Yunfei Deng
language : en
Publisher:
Release Date : 2005
Modeling Innovations In Euv And Nanoimprint Lithography written by Yunfei Deng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Evaluating Printability Of Buried Native Euv Mask Phase Defects Through A Modeling And Simulation Approach
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Author :
language : en
Publisher:
Release Date : 2015
Evaluating Printability Of Buried Native Euv Mask Phase Defects Through A Modeling And Simulation Approach written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native EUV mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability caused by them. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a novel level-set multilayer growth model was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. The same tool was used for performing the actual deposition of the multilayer stack over the characterized native defects, thus ensuring a fair comparison between the actual multilayer growth over native defects, and modeled multilayer growth over regular-shaped defects. Further, the printability of the characterized native defects was studied with the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL). Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect's width and height, irrespective of its shape. This would allow us to predict printability of the arbitrarily-shaped native EUV mask defects in a systematic and robust manner.
Growth And Printability Of Multilayer Phase Defects On Euv Maskblanks
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Author :
language : en
Publisher:
Release Date : 2007
Growth And Printability Of Multilayer Phase Defects On Euv Maskblanks written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ultraviolet lithography (EUVL) for semiconductor manufacturing. Both the specification and reduction of defects necessitate the understanding of their printability and how they are generated and grow during Mo-Si multilayer (ML) deposition. A ML phase defect can be depicted by its topographical profile on the surface as either a bump or pit, which is then characterized by height or depth and width. The complexity of such seemingly simple phase defects lies in the many ways they can be generated and the difficulties of measuring their physical shape/size and optical effects on printability. An effective way to study phase defects is to use a programmed defect mask (PDM) as 'model' test sample where the defects are produced with controlled growth on a ML blank and accurate placement in varying proximity to absorber patterns on the mask. This paper describes our recent study of ML phase defect printability with resist data from exposures of a ML PDM on the EUV micro-exposure tool (MET, 5X reduction with 0.3NA).
Handbook Of Photomask Manufacturing Technology
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Author : Syed Rizvi
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Handbook Of Photomask Manufacturing Technology written by Syed Rizvi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
As the semiconductor industry attempts to increase the number of functions that will fit into the smallest space on a chip, it becomes increasingly important for new technologies to keep apace with these demands. Photomask technology is one of the key areas to achieving this goal. Although brief overviews of photomask technology exist in the literature, the Handbook of Photomask Manufacturing Technology is the first in-depth, comprehensive treatment of existing and emerging photomask technologies available. The Handbook of Photomask Manufacturing Technology features contributions from 40 internationally prominent authors from industry, academia, government, national labs, and consortia. These authors discuss conventional masks and their supporting technologies, as well as next-generation, non-optical technologies such as extreme ultraviolet, electron projection, ion projection, and x-ray lithography. The book begins with an overview of the history of photomask development. It then demonstrates the steps involved in designing, producing, testing, inspecting, and repairing photomasks, following the sequences observed in actual production. The text also includes sections on materials used as well as modeling and simulation. Continued refinements in the photomask-making process have ushered in the sub-wavelength era in nanolithography. This invaluable handbook synthesizes these refinements and provides the tools and possibilities necessary to reach the next generation of microfabrication technologies.
Novel Euv Mask Blank Defect Repair Developments
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Author :
language : en
Publisher:
Release Date : 2003
Novel Euv Mask Blank Defect Repair Developments written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
The development of defect-free reticle blanks is an important challenge facing the commercialization of extreme ultraviolet lithography (EUVL). The basis of EUVL reticles are mask blanks consisting of a substrate and a reflective Mo/Si multilayer. Defects on the substrate or defects introduced during multilayer deposition can result in critical phase and amplitude defects. Amplitude- or phase-defect repair techniques are being developed with the goal to repair many of these defects. In this report, we discuss progress in two areas of defect repair: (1) We discuss the effect of the residual reflectance variation over the repair zone after amplitude-defect repair on the process window. This allows the determination of the maximum tolerable residual damage induced by amplitude defect repair. (2) We further performed a quantitative assessment of the yield improvement due to defect repair. We found that amplitude- and phase-defect repair have the potential to significantly improve mask blank yield. Our calculations further show that yield can be maximized by increasing the number of Mo/Si bilayers.
Euv Lithography
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Author : Vivek Bakshi
language : en
Publisher: SPIE Press
Release Date : 2009
Euv Lithography written by Vivek Bakshi and has been published by SPIE Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Art categories.
Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.