Process Technology For Silicon Carbide Devices


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Process Technology For Silicon Carbide Devices

Process Technology For Silicon Carbide Devices Author by : Carl-Mikael Zetterling
Languange Used : en
Release Date : 2002-01-01
Publisher by : IET
ISBN : 0852969988
File Size : 48,5 Mb
Total Download : 300

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for t
Category: Technology & Engineering

Process Technology For Silicon Carbide Devices

Process Technology For Silicon Carbide Devices Author by :
Languange Used : en
Release Date : 2002
Publisher by :
ISBN : OCLC:838910351
File Size : 44,5 Mb
Total Download : 863

This book on the process technology for silicon carbide devices is divided into seven chapters. The first chapter discusses the material properties of SiC, and specifically the advantages of SiC that started the interest in the first place. This chapter also includes some basic calculations on high-voltage blocking and on-resistance. Chapters 2-6 cover the basic process steps used in fabricating SiC devices. The chapters cover bulk and epitaxial growth of SiC, ion implantation and diffusion, wet and dry etching, thermally grown and deposited dielectrics and Schottky and ohmic contacts. The fin
Category: Dielectrics

Advances In Silicon Carbide Processing And Applications

Advances In Silicon Carbide Processing And Applications Author by : Stephen E. Saddow
Languange Used : en
Release Date : 2004
Publisher by : Artech House
ISBN : 1580537413
File Size : 52,7 Mb
Total Download : 332

Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-c
Category: Science

Physics And Technology Of Silicon Carbide Devices

Physics And Technology Of Silicon Carbide Devices Author by : Yasuto Hijikata
Languange Used : en
Release Date : 2012-10-16
Publisher by : BoD – Books on Demand
ISBN : 9789535109174
File Size : 40,9 Mb
Total Download : 388

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics under
Category: Science
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