Silicon Integrated Circuits
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Polycrystalline Silicon For Integrated Circuit Applications
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Author : Ted Kamins
language : en
Publisher:
Release Date : 1988-01-31
Polycrystalline Silicon For Integrated Circuit Applications written by Ted Kamins and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988-01-31 with categories.
Silicon Integrated Circuits
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Author : Dawon Kahng
language : en
Publisher: Academic Press
Release Date : 2013-10-22
Silicon Integrated Circuits written by Dawon Kahng and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-22 with Technology & Engineering categories.
Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams. The second chapter is concerned with the use of electron cyclotron resonance plasmas in two important materials processing techniques: reactive ion-beam etching and plasma deposition. The last chapter of the book deals with the exploding area of very large scale integration processing and process simulation. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
Esd In Silicon Integrated Circuits
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Author : E. Ajith Amerasekera
language : en
Publisher: John Wiley & Sons
Release Date : 2002-05-22
Esd In Silicon Integrated Circuits written by E. Ajith Amerasekera and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-05-22 with Technology & Engineering categories.
* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.
Silicon Optoelectronic Integrated Circuits
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Author : Horst Zimmermann
language : en
Publisher: Springer
Release Date : 2019-01-30
Silicon Optoelectronic Integrated Circuits written by Horst Zimmermann and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-30 with Science categories.
This book reviews various topics in optoelectronics and the design of microelectronic circuits. It introduces readers to the essential features of optical absorption and device physics of photodetectors, as well as their integration in modern CMOS and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of Optoelectronic Integrated Circuits (OEICs), which are described in the main part of the book. In the second edition of this book, new and outstanding integrated high-bandwidth pin photodiodes as well as avalanche photodiodes in the linear mode and in the Geiger mode are introduced. To cover the topic comprehensively, the book presents detailed descriptions of OEICs for a wide range of applications: from various optical sensors, smart sensors, image sensors, 3D-sensors and optical storage systems, to fiber receivers and receivers for optical wireless communication, as well as single-photon detection. This new edition also reflects the latest trends in OEIC research on integrated optical receivers at the quantum limit and electronic-photonic integration, and highlights outstanding 3D-integrated application examples like a multi-node optical switch, an optical transceiver, and a high-resolution 3D sensor.
The Piezojunction Effect In Silicon Integrated Circuits And Sensors
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Author : Fabiano Fruett
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-04-18
The Piezojunction Effect In Silicon Integrated Circuits And Sensors written by Fabiano Fruett and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-04-18 with Technology & Engineering categories.
Mechanical stress affects the magnitude of base-emitter voltages of forward biased bipolar transistors. This phenomenon is called the piezojunction effect. The piezojunction effect is the main cause of inaccuracy and drift in integrated temperature sensors and bandgap voltage references. The aim of The Piezojunction Effect in Silicon Integrated Circuits and Sensors is twofold. Firstly, to describe techniques that can reduce the mechanical-stress-induced inaccuracy and long-term instability. Secondly, to show, that the piezojunction effect can be applied for new types of mechanical-sensor structures. During IC fabrication and packaging thermo-mechanical stress is induced, when the packaged chips cool down to the temperature of application. The piezojunction effect is caused by a stress-induced change in the conductivity of the minority-charge carriers, while the piezoresistive effect is caused by a similar effect for the majority-charge carriers. To characterise the anisotropic piezojunction effect, the authors performed systematic investigations over wide ranges of mechanical stress and temperature. The experiments have been performed for various crystal and stress orientations. The experimental results have been used to extract the first- and second-order piezojunction (FOPJ and SOPJ) coefficients for bipolar transistors. It is shown how the knowledge of the piezojunction and piezoresistive coefficients can used to minimize the undesirable mechanical-stress effects on the electrical characteristics of transistors and resistors, respectively. Devices with lower mechanical-stress sensitivity can be found by comparing their piezo-coefficients. The layout of the device can also be optimized to reduce the mechanical-stress sensitivity. As a next step it is shown, how the knowledge of the piezo-effects on device level can be used to predict and to reduce their negative influence on circuit level. This is demonstrated for a number of important basic circuits, including translinear circuits, temperature transducers and bandgap references. Finally, it is shown how the piezojunction effect can be used to fabricate stress-sensing elements. It appears that, in comparison with resistive stress-sensing elements, the piezojunction sensors have the advantage of a smaller size and very low power dissipation.
Polycrystalline Silicon For Integrated Circuit Applications
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Author : Theodore Kamins
language : en
Publisher: Springer
Release Date : 1988-01-31
Polycrystalline Silicon For Integrated Circuit Applications written by Theodore Kamins and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988-01-31 with Gardening categories.
Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
Silicon Integrated Circuits
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Author : Dawon Kahng
language : en
Publisher: Academic Press
Release Date : 2013-10-22
Silicon Integrated Circuits written by Dawon Kahng and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-22 with Technology & Engineering categories.
Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits.
Polycrystalline Silicon For Integrated Circuit Applications
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Author : Ted Kamins
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Polycrystalline Silicon For Integrated Circuit Applications written by Ted Kamins and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
Polycrystalline Silicon For Integrated Circuits And Displays
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Author : Ted Kamins
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Polycrystalline Silicon For Integrated Circuits And Displays written by Ted Kamins and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians workingwith polycrystalline silicon in the integrated circuit and display industries.
Silicon Integrated Circuits
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Author : Dawon Kahng
language : en
Publisher:
Release Date : 1981
Silicon Integrated Circuits written by Dawon Kahng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with categories.