The Formation Of Structural Imperfections In Semiconductor Silicon
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The Formation Of Structural Imperfections In Semiconductor Silicon
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Author : V. I. Talanin
language : en
Publisher: Cambridge Scholars Publishing
Release Date : 2018-12-14
The Formation Of Structural Imperfections In Semiconductor Silicon written by V. I. Talanin and has been published by Cambridge Scholars Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-12-14 with Science categories.
Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Charged Semiconductor Defects
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Author : Edmund G. Seebauer
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-11-14
Charged Semiconductor Defects written by Edmund G. Seebauer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-14 with Science categories.
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Imperfections And Impurities In Semiconductor Silicon
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Author : K. V. Ravi
language : en
Publisher: John Wiley & Sons
Release Date : 1981
Imperfections And Impurities In Semiconductor Silicon written by K. V. Ravi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Semiconductors categories.
Proceedings Of The Second Symposium On Defects In Silicon
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Author : W. Murray Bullis
language : en
Publisher:
Release Date : 1991
Proceedings Of The Second Symposium On Defects In Silicon written by W. Murray Bullis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Semiconductors categories.
Iccge 19 Omvpe 19 Program And Abstracts Ebook
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Author : ICCGE-19/OMVPE-19/AACG
language : en
Publisher: CTI Meeting Technology
Release Date : 2019-07-11
Iccge 19 Omvpe 19 Program And Abstracts Ebook written by ICCGE-19/OMVPE-19/AACG and has been published by CTI Meeting Technology this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-07-11 with Medical categories.
A collection of abstracts for the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) to be held jointly with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) and the 17th International Summer School on Crystal Growth (ISSCG-17).
New Research On Silicon
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Author : Vitalyi Igorevich Talanin
language : en
Publisher: BoD – Books on Demand
Release Date : 2017-05-31
New Research On Silicon written by Vitalyi Igorevich Talanin and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-05-31 with Science categories.
The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.
Imperfections And Active Centres In Semiconductors
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Author : R. G. Rhodes
language : en
Publisher: Elsevier
Release Date : 2014-05-12
Imperfections And Active Centres In Semiconductors written by R. G. Rhodes and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-05-12 with Science categories.
Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.
Point Defects In Group Iv Semiconductors
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Author : S. Pizzini
language : en
Publisher: Materials Research Forum LLC
Release Date : 2017-04-05
Point Defects In Group Iv Semiconductors written by S. Pizzini and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-04-05 with Technology & Engineering categories.
A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.
New Research On Semiconductors
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Author : Thomas B. Elliot
language : en
Publisher: Nova Publishers
Release Date : 2006
New Research On Semiconductors written by Thomas B. Elliot and has been published by Nova Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Semiconductor films categories.
Includes within its scope, topics such as: studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; and, interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions.
Semiconductor Silicon Crystal Technology
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Author : Fumio Shimura
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Semiconductor Silicon Crystal Technology written by Fumio Shimura and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.