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Defect Analysis In Iii V Semiconductor Thin Films Grown By Hydride Vapor Phase Epitaxy

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Defect Analysis In Iii V Semiconductor Thin Films Grown By Hydride Vapor Phase Epitaxy

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Author :
language : en
Publisher:
Release Date : 2014

Defect Analysis In Iii V Semiconductor Thin Films Grown By Hydride Vapor Phase Epitaxy written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.

Hydride vapor phase epitaxy (HVPE) is an epitaxial growth technique renowned for its ability to grow III-V semiconductors at high growth rates using lower cost reagents compared to metal-organic vapor phase epitaxy (MOVPE), the current industry standard. Recent interest in III-V photovoltaics has led to increased attention on HVPE. While the technique came to maturity in the 70s, much is unknown about how defects incorporate in HVPE-grown materials. Further understanding of how defects incorporate in III-V materials grown by HVPE is necessary to facilitate wider adoption of the technique. This information would inform strategies for minimizing and eliminating defects in HVPE materials, allowing for the formation of high performance devices. This investigation presents a study of multiple defects in III-V semiconductors grown by HVPE in the context of specific device applications, spanning point defects comprised of individual atoms to extended defects which propagate throughout the crystal. The incorporation of the arsenic anti-site defect, AsGa, intrinsic point defect was studied in high growth rate GaAs layers with potential photovoltaic applications. Relationships between growth conditions and incorporation of AsGa in GaAs epilayers were determined. The incorporation of AsGa depended strongly on the growth conditions employed, and a model was developed to predict the concentration of anti-site defects as a function of those growth conditions. Dislocations and anti-phase domain boundaries (APDBs), two types of extended defects, were investigated in the heteroepitaxial GaAs/Ge system. It was found that the use of 6° miscut substrates and specific growth temperatures led to elimination of APDBs. Dislocation densities were reduced through the use of high growth temperatures. The third and final application investigated was the growth of InxGa1-xAs metamorphic buffer layers (MBLs) by HVPE. The relationships between the growth conditions and the alloy composition were determined, and a model was developed to explain the observed behavior. Compositional grading strategies were explored and insight into the minimization of dislocations in these layers was developed. The dislocation microstructure was analyzed by TEM and related to the layer design, leading to the development of an atomic scale model for dislocation nucleation and propagation throughout the MBL layers.

Scientific And Technical Aerospace Reports

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Author :
language : en
Publisher:
Release Date : 1994

Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Aeronautics categories.

Comprehensive Semiconductor Science And Technology

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Author :
language : en
Publisher: Newnes
Release Date : 2011-01-28

Comprehensive Semiconductor Science And Technology written by and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-28 with Science categories.

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Electrical Electronics Abstracts

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Author :
language : en
Publisher:
Release Date : 1997

Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.

Metalorganic Vapor Phase Epitaxy Movpe

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Author : Stuart Irvine
language : en
Publisher: John Wiley & Sons
Release Date : 2019-10-07

Metalorganic Vapor Phase Epitaxy Movpe written by Stuart Irvine and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10-07 with Technology & Engineering categories.

Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Modeling And Analysis Of A Continuous Hydride Vapor Phase Epitaxy Manufacturing System For Iii V Photovoltaics

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Author : Min Yao (Ph.D.)
language : en
Publisher:
Release Date : 2018

Modeling And Analysis Of A Continuous Hydride Vapor Phase Epitaxy Manufacturing System For Iii V Photovoltaics written by Min Yao (Ph.D.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with categories.

This work presents the modeling and analysis of a novel continuous hydride vapor phase epitaxy (HVPE) growth system that is designed for the efficient and controllable production of III-V multilayer heterostructures for photovoltaic application. The proposed HVPE system comprises multiple deposition chambers isolated by separation zones. Substrates are transported by a moving belt through each deposition chamber where HVPE growth takes place under independent conditions. Such configuration eliminates the "latency" effect of reactant switching and thus enables the precise control of the interfacial composition. To aid the process design, a reactor model is developed by updating the general transport model with moving mesh feature and incorporating a kinetic model for III-V HVPE growth established in this work. With this model, material properties such as film thickness, uniformity and composition can be predicted given the reactor geometry and process operating parameters. The transport phenomena and the epilayer deposition in the growth system are studied through the reactor model. It is found that the gas-phase concentrations in the reactor show periodic variations over time while the deposition is occurring on moving substrates, which can be used to simplify the solution of the model. By investigating the influence of the design variables of the separation zone on the abruptness of the interfacial composition transition in heterostructures, it is found that a sharp interface can be produced by decreasing the height of the separation zone even without a gas curtain. The model is further used to simulate the growth of a multilayer structure in solar cells and the feasibility of continuous growth in the proposed system is verified. Finally, solar cell simulation is integrated to quantify the process performance in term of device efficiency. The influence of interface abruptness at the GaInP-GaAs heterojunction on the solar cell efficiency is investigated. It is found that the compositionally graded GaInAsP extra interlayer between GaInP-window and GaAs-emitter negatively affects the conversion efficiency of GaAs single junction solar cell. The solar cell efficiency decreases as the thickness of the transition layer increases. The result of this study confirms the effectiveness of the proposed continuous HVPE process for the growth of heterostructures.