Design Of Power Scalable Gallium Nitride Class E Power Amplifiers
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Design Of Power Scalable Gallium Nitride Class E Power Amplifiers
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Author : Mark Anthony Connor
language : en
Publisher:
Release Date : 2014
Design Of Power Scalable Gallium Nitride Class E Power Amplifiers written by Mark Anthony Connor and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with Amplifiers, Radio frequency categories.
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microwave power amplifiers in the commercial and defense wireless industries continues to drive the research and development of gallium nitride (GaN) devices and their implementation in the receiver and transmitter lineups of modern microwave systems. Unlike silicon (Si) or gallium arsenide (GaAs), GaN is a direct wide bandgap semiconductor that permits usage in high voltage and therefore high power applications. Additionally, the increased saturation velocity of GaN allows for operation well into the super high frequency (SHF) portion of the RF spectrum. For the power amplifier designer, active devices utilizing GaN will exhibit power densities almost an order of magnitude greater than comparably sized GaAs devices and almost two orders of magnitude greater than Si devices. Not only does this mean an overall size reduction of an amplifier for a given output power, but it allows GaN to replace specialized components such as the traveling-wave tube (TWT) and other circuits once deemed impossible to realize using solid-state electronics. Designs utilizing GaN in amplifiers, switches, mixers, etc., are able to meet the continually shrinking size, increased power, stringent thermal, and cost requirements of a modern microwave system.There are two relatively straight forward methods used to investigate the intrinsic power scaling properties of a GaN high-electron-mobility transistor (HEMTs) configured as a common source amplifier. The first method involves sweeping the applied drain to source voltage bias and the second method involves scaling the physical size of the transistor. The prior method can be used to evaluate fixed sized transistors while the latter method requires an understanding of the obtainable power density for a given device technology prior to fabrication. Since the power density is also a function of the drain to source voltage bias, an initial iterative component of the design cycle may be required to fully characterize the device technology. If a scalable nonlinear device model is available to the designer, the harmonic balance simulator in most computer aided design (CAD) tools can be used to evaluate device parameters such as the maximum output power and power added efficiency (PAE) using large signal load pull simulations.The circuits presented in this thesis address two power amplifier design approaches commonly used in industry. The first approach utilizes commercially available bare die GaN transistors that can be wire-bonded to matching circuitry on a printed circuit board (PCB). This technique is known as hybrid packaging. The second approach utilizes a fully integrated design or monolithic microwave integrated circuit (MMIC) and the process design kit (PDK) used to design, simulate and layout the power amplifier circuitry before submission to a foundry for fabrication. In both cases, the nonlinear transistor models are used to investigate the power scalability of class E mode GaN power amplifiers and the techniques used to implement such circuits. The design, results, and challenges of each approach are discussed and future work is presented.
Microwave High Power High Efficiency Gan Amplifiers For Communication
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Author : Subhash Chandra Bera
language : en
Publisher: Springer Nature
Release Date : 2022-11-29
Microwave High Power High Efficiency Gan Amplifiers For Communication written by Subhash Chandra Bera and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-29 with Technology & Engineering categories.
The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
Algan Gan Hemt Power Amplifiers With Optimized Power Added Efficiency For X Band Applications
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Author : Jutta Kühn
language : en
Publisher: KIT Scientific Publishing
Release Date : 2011
Algan Gan Hemt Power Amplifiers With Optimized Power Added Efficiency For X Band Applications written by Jutta Kühn and has been published by KIT Scientific Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Power amplifiers categories.
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Millimeter Wave Gan Power Amplifier Design
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Author : Edmar Camargo
language : en
Publisher: Artech House
Release Date : 2022-05-31
Millimeter Wave Gan Power Amplifier Design written by Edmar Camargo and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-05-31 with Technology & Engineering categories.
This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.
High Efficiency Rf And Microwave Solid State Power Amplifiers
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Author : Paolo Colantonio
language : en
Publisher: John Wiley & Sons
Release Date : 2009-07-08
High Efficiency Rf And Microwave Solid State Power Amplifiers written by Paolo Colantonio and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-07-08 with Technology & Engineering categories.
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
Design Of Linear Rf Outphasing Power Amplifiers
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Author : Xuejun Zhang
language : en
Publisher: Artech House
Release Date : 2003
Design Of Linear Rf Outphasing Power Amplifiers written by Xuejun Zhang and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
This is the first book devoted exclusively to the outphasing power amplifier, covering the most recent research results on important aspects in practical design and applications. A compilation of all the proposed outphasing approaches, this is an important resource for engineers designing base station and mobile handset amplifiers, engineering managers and program managers supervising power amplifier designs, and R&D personnel in industry. The work enables you to: design microwave power amplifiers with higher efficiency and improved linearity at a lower cost; understand linearity and performance tradeoffs in microwave power amplifiers; and understand the effect of new modulation techniques on microwave power amplifiers.
Design And Control Of Rf Power Amplifiers
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Author : Alireza Shirvani
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-18
Design And Control Of Rf Power Amplifiers written by Alireza Shirvani and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-18 with Technology & Engineering categories.
Design and Control of RF Power Amplifiers investigates various architectures and concepts for the design and control of radio-frequency (RF) power amplifiers. This book covers merits and challenges of integrating RF power amplifiers in various technologies, and introduces a number of RF power amplifier performance metrics. It provides a thorough review of various power amplifier topologies, followed by a description of approaches and architectures for the control and linearization of these amplifiers. A novel parallel amplifier architecture introduced in this book offers a breakthrough solution to enhancing efficiency in systems using power control. Design and Control of RF Power Amplifiers is a valuable resource for designers, researchers and students in the field of RF integrated circuit design. Detailed and thorough coverage of various concepts in RF power amplifier design makes this book an invaluable guide for both beginners and professionals.
Rf And Microwave Power Amplifier Design Second Edition
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Author : Andrei Grebennikov
language : en
Publisher: McGraw Hill Professional
Release Date : 2015-02-09
Rf And Microwave Power Amplifier Design Second Edition written by Andrei Grebennikov and has been published by McGraw Hill Professional this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-02-09 with Technology & Engineering categories.
The latest power amp design methods Fully updated to address cutting-edge technologies, the new edition of this practical guide provides comprehensive, state-of-the-art coverage of RF and microwave power amplifier design. The book describes both existing and new schematic configurations, theoretical approaches, circuit simulation results, and implementation techniques. New chapters discuss linearization and efficiency enhancement and high-efficiency Doherty power amplifiers. Featuring a systematic approach, this comprehensive resource bridges the theory and practice of RF and microwave engineering. RF and Microwave Power Amplifier Design, Second Edition, covers: Two-port network parameters and passive elements Nonlinear circuit design methods Nonlinear active device modeling Impedance matching Power transformers, combiners, and couplers Power amplifier design fundamentals High-efficiency power amplifier design Broadband power amplifiers Linearization and efficiency enhancement techniques High-efficiency Doherty power amplifiers
Gan On Si Rf Switched Mode Power Amplifiers For Non Constant Envelope Signals
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Author : Shishir Ramasare Shukla
language : en
Publisher:
Release Date : 2015
Gan On Si Rf Switched Mode Power Amplifiers For Non Constant Envelope Signals written by Shishir Ramasare Shukla and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with Amplifiers, Radio frequency categories.
This work implements three switched mode power amplifier topologies namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station applications. The presented power amplifiers address practical implementation design constraints and explore the fundamental performance limitations of switched-mode power amplifiers for cellular band. The designs are analyzed and compared with respect to non-idealities like finite on-resistance, finite-Q of inductors, bond-wire effects, input signal duty cycle, and supply and component variations. These architectures are designed for non-constant envelope inputs in the form of digitally modulated signals such as RFPWM, which undergo duty cycle variation. After comparing the three topologies, this work concludes that the inverse push-pull class-E power amplifier shows lower efficiency degradation at reduced duty cycles. For GaN based discrete power amplifiers which have less drain capacitance compared to GaAs or CMOS and where the switch loss is dominated by wire-bonds, an inverse push-pull class-E gives highest output power at highest efficiency. Push-pull class-E can give efficiencies comparable to inverse push-pull class-E in presence of bondwires on tuning the Zero-Voltage Switching (ZVS) network components but at a lower output power. Current-Mode Class-D (CMCD) is affected most by the presence of bondwires and gives least output power and efficiency compared to other two topologies. For systems dominated by drain capacitance loss or which has no bondwires, the CMCD and push-pull class-E gives better output power than inverse push-pull class-E. However, CMCD is more suitable for high breakdown voltage process.
Advanced Techniques In Rf Power Amplifier Design
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Author : Steve C. Cripps
language : en
Publisher: Artech House
Release Date : 2002
Advanced Techniques In Rf Power Amplifier Design written by Steve C. Cripps and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Technology & Engineering categories.
This much-anticipated volume builds on the author's popular work, RF Power Amplifiers for Wireless Communications (Artech House, 1999), offering you a more in-depth understanding of the theory and design of RF power amplifiers. An invaluable reference tool for RF, digital and system level designers, the book enables you to efficiently design linear RF power amplifiers , and includes detailed discussions on envelope power management schemes and linearization techniques.