Diffusion In Silicon Isotope Heterostructures
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Diffusion In Silicon Isotope Heterostructures
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Author :
language : en
Publisher:
Release Date : 2004
Diffusion In Silicon Isotope Heterostructures written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and 28Si enriched layers, enables the observation of 3°Si self-diffusion from the natural layers into the 28Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion mechanisms, the native defect charge states, and the self- and dopant diffusion coefficients can be determined. This information is necessary to enhance the physical modeling of dopant diffusion in Si. It is of particular interest to the modeling of future electronic Si devices, where the nanometer-scale features have created the need for precise physical models of atomic diffusion in Si. The modeling of the experimental profiles of simultaneous diffusion of B and Si under p-type extrinsic conditions revealed that both species are mediated by neutral and singly, positively charged Si self-interstitials. The diffusion of As and Si under extrinsic n-type conditions yielded a model consisting of the interstitialcy and vacancy mechanisms of diffusion via singly negatively charged self-interstitials and neutral vacancies. The simultaneous diffusion of P and Si has been modeled on the basis of neutral and singly negatively charged self-interstitials and neutral and singly positively charged P species. Additionally, the temperature dependence of the diffusion coefficient of Si in Ge was measured over the temperature range of 550 C to 900 C using a buried Si layer in an epitaxially grown Ge layer.
Diffusion In Silicon Isotope Heterostructures
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Author : Hughes Howland Silvestri
language : en
Publisher:
Release Date : 2004
Diffusion In Silicon Isotope Heterostructures written by Hughes Howland Silvestri and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Dopant And Self Diffusion In Extrinsic N Type Silicon Isotopically Controlled Heterostructures
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Author :
language : en
Publisher:
Release Date : 2002
Dopant And Self Diffusion In Extrinsic N Type Silicon Isotopically Controlled Heterostructures written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
We present experimental results of dopant- and self-diffusion in extrinsic silicon doped with As. Multilayers of isotopically controlled 28Si and natural silicon enable simultaneous analysis of 3°Si diffusion into the 28Si enriched layers and dopant diffusion throughout the multilayer structure. In order to suppress transient enhanced self- and dopant diffusion caused by ion implantation, we adopted a special approach to dopant introduction. First, an amorphous 250-nm thick Si layer was deposited on top of the Si isotope heterostructure. Then the dopant ions were implanted to a depth such that all the radiation damage resided inside this amorphous cap layer. These samples were annealed for various times and temperatures to study the impact of As diffusion and doping on Si self-diffusion. The Si self-diffusion coefficient and the dopant diffusivity for various extrinsic n-type conditions were determined over a wide temperature range. We observed increased diffusivities that we attribute to the increase in the concentration of the native defect promoting the diffusion.
Simultaneous Phosphorus And Si Self Diffusion In Extrinsic Isotopically Controlled Silicon Heterostructures
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Author : Eugene E. Haller
language : en
Publisher:
Release Date : 2003
Simultaneous Phosphorus And Si Self Diffusion In Extrinsic Isotopically Controlled Silicon Heterostructures written by Eugene E. Haller and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
We present experimental results of impurity and self-diffusion in an isotopically controlled silicon heterostructure extrinsically doped with phosphorus. As a consequence of extrinsic doping, the concentration of singly negatively charged native defects is enhanced and the role of these native defect charge states in the simultaneous phosphorus and Si self-diffusion can be determined. Multilayers of isotopically controlled {sup 28}Si and natural silicon enable simultaneous analysis of {sup 30}Si self-diffusion into the {sup 28}Si enriched layers and phosphorus diffusion throughout the multilayer structure. An amorphous 260 nm thick Si cap layer was deposited on top of the Si isotope heterostructure. The phosphorus ions were implanted to a depth such that all the radiation damage resided inside this amorphous cap layer, preventing the generation of excess native defects and enabling the determination of the Si self-diffusion coefficient and the phosphorus diffusivity under equilibrium conditions. These samples were annealed at temperatures between 950 and 1100 C to study the diffusion. Detailed analysis of the diffusion process was performed on the basis of a P diffusion model which involves neutral and positively charged mobile P species and neutral and singly negatively charged self-interstitial.
Diffusion In Semiconductors Other Than Silicon Compilation
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Author : David J. Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2011-02-21
Diffusion In Semiconductors Other Than Silicon Compilation written by David J. Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-02-21 with Technology & Engineering categories.
Defect and Diffusion Forum Vol. 308
Proceedings Of The Third International Symposium On Defects In Silicon
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Author : Takao Abe
language : en
Publisher: The Electrochemical Society
Release Date : 1999
Proceedings Of The Third International Symposium On Defects In Silicon written by Takao Abe and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Science categories.
Silicon Germanium And Their Alloys
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Author : Gudrun Kissinger
language : en
Publisher: CRC Press
Release Date : 2014-12-09
Silicon Germanium And Their Alloys written by Gudrun Kissinger and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-09 with Science categories.
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Diffusion In Silicon A Seven Year Retrospective
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Author : David J. Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2005-07-15
Diffusion In Silicon A Seven Year Retrospective written by David J. Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-07-15 with Technology & Engineering categories.
This collection of abstracts of experimental and theoretical papers on the subject of diffusion in silicon is intended to complement earlier volumes (DDF153-155) which covered the previous decades work on the same topic. The abstracts are grouped according to the diffusing species in question. The latter comprise Ag, Al, As, Au, B, Ba, Be, C, Ca, Cl, Co, Cr, Cu, Er, F, Fe, Ge, H, He, Hf, In, Ir, K, Mg, Mn, Mo, N, Na, Nb, Ni, O, P, Pb, Pt, Rb, Sb, Se, Si, SiH3, Sn, Ti, V, Yb and Zn with regard to bulk diffusion, Ag, Au, Ba, Cl, Cu, Er, F, Ga, Ge, In, O, Pb, Sb, Si, SiH3, Sn and Y with regard to surface diffusion, H with regard to grain-boundary diffusion, and self-diffusion in liquid Si.
Defects And Impurities In Silicon Materials
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Author : Yutaka Yoshida
language : en
Publisher: Springer
Release Date : 2016-03-30
Defects And Impurities In Silicon Materials written by Yutaka Yoshida and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Technology & Engineering categories.
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Ceramics Science And Technology Volume 1
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Author : Ralf Riedel
language : en
Publisher: John Wiley & Sons
Release Date : 2008-03-31
Ceramics Science And Technology Volume 1 written by Ralf Riedel and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-03-31 with Technology & Engineering categories.
Although ceramics have been known to mankind literally for millennia, research has never ceased. Apart from the classic uses as a bulk material in pottery, construction, and decoration, the latter half of the twentieth century saw an explosive growth of application fields, such as electrical and thermal insulators, wear-resistant bearings, surface coatings, lightweight armour, or aerospace materials. In addition to plain, hard solids, modern ceramics come in many new guises such as fabrics, ultrathin films, microstructures and hybrid composites. Built on the solid foundations laid down by the 20-volume series Materials Science and Technology, Ceramics Science and Technology picks out this exciting material class and illuminates it from all sides. Materials scientists, engineers, chemists, biochemists, physicists and medical researchers alike will find this work a treasure trove for a wide range of ceramics knowledge from theory and fundamentals to practical approaches and problem solutions.