E Hemt
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E Hemt
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Author : Aixi Zhang
language : en
Publisher:
Release Date : 2014
E Hemt written by Aixi Zhang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with Gallium arsenide semiconductors categories.
Hemt Technology And Applications
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Author : Trupti Ranjan Lenka
language : en
Publisher: Springer Nature
Release Date : 2022-06-23
Hemt Technology And Applications written by Trupti Ranjan Lenka and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-23 with Technology & Engineering categories.
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Nitride Wide Bandgap Semiconductor Material And Electronic Devices
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Author : Yue Hao
language : en
Publisher: CRC Press
Release Date : 2016-11-03
Nitride Wide Bandgap Semiconductor Material And Electronic Devices written by Yue Hao and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-03 with Computers categories.
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Compound Semiconductor Materials And Devices
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Author : Zhaojun Liu
language : en
Publisher: Springer Nature
Release Date : 2022-06-01
Compound Semiconductor Materials And Devices written by Zhaojun Liu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-01 with Technology & Engineering categories.
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Semiconductor Heterostructure Devices
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Author : Masayuki Abe
language : en
Publisher: CRC Press
Release Date : 1989
Semiconductor Heterostructure Devices written by Masayuki Abe and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Bipolar transistors categories.
A highly technical treatment of specialized transistors. Abe examines high electron mobility transistors, detailing their physical principles, operational characteristics, and analog and digital applications. Yokoyama describes some resonant tunnelling devices: hot electron and bipolar transistors, and barriers using InGaAs-based material. Both authors are from Fujitsu Laboratories Ltd. in Atsugi, Japan. A very small book for the price, and on acid paper as well. Annotation copyrighted by Book News, Inc., Portland, OR
Scientific Bulletin
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Author :
language : en
Publisher:
Release Date : 1986
Scientific Bulletin written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Research categories.
Semiconductors And Semimetals
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Author :
language : en
Publisher: Academic Press
Release Date : 1988-02-01
Semiconductors And Semimetals written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988-02-01 with Technology & Engineering categories.
Semiconductors and Semimetals
The Physics Of Semiconductor Devices
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Author : R. K. Sharma
language : en
Publisher: Springer
Release Date : 2019-01-31
The Physics Of Semiconductor Devices written by R. K. Sharma and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-31 with Technology & Engineering categories.
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Gallium Nitride Gan
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Author : Farid Medjdoub
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Gallium Nitride Gan written by Farid Medjdoub and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Switchmode Rf And Microwave Power Amplifiers
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Author : Andrei Grebennikov
language : en
Publisher: Academic Press
Release Date : 2021-03-19
Switchmode Rf And Microwave Power Amplifiers written by Andrei Grebennikov and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-19 with Technology & Engineering categories.
Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations