Epitaxy Of Polar Oxides And Semiconductors
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Epitaxy Of Polar Oxides And Semiconductors
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Author : Christopher Tyrel Shelton
language : en
Publisher:
Release Date : 2016
Epitaxy Of Polar Oxides And Semiconductors written by Christopher Tyrel Shelton and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Polar Oxides
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Author : Rainer Waser
language : en
Publisher: John Wiley & Sons
Release Date : 2006-03-06
Polar Oxides written by Rainer Waser and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-03-06 with Technology & Engineering categories.
Here, more than 20 experts from leading research institutes around the world present the entire scope of this rapidly developing field. In so doing, they cover a wide range of topics, including the characterization and investigation of structural, dielectric and piezoelectric properties of ceramic materials, a well as phase transitions, electrical and optical properties and microscopic investigations. Another feature is a complete profile of the properties of polar oxides -- from their proof to their latest applications. Throughout, the authors review, discuss and assess the material properties with regard to new and advanced characterization and imaging techniques. For physicists, physicochemists, semiconductor and solid state physicists, materials scientists, and students of chemistry and physics.
Oxide Materials At The Two Dimensional Limit
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Author : Kristy Joy Kormondy
language : en
Publisher:
Release Date : 2017
Oxide Materials At The Two Dimensional Limit written by Kristy Joy Kormondy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
Emergent phenomena in transition metal oxide films are receiving considerable attention with the development of techniques for the preparation of well-controlled oxide surfaces. On the macroscopic scale, such display novel physics phenomena including superconductivity, magnetism, ferroelectricity, and more. On the nanometer scale, the properties of epitaxial interfaces are further impacted by strain, band alignment, and crystal imperfections that may affect the long-range as well as the short-range order. Furthermore, symmetry lowering at the interface creates entirely new environments that are not accessible in the bulk environment. Thus, thin-film oxide materials are increasingly important in many applications. My work focuses on epitaxial oxides of the perovskite, spinel, and rocksalt structure and covers two main phenomena: (1) the two-dimensional electron gas at epitaxial oxide interfaces, and (2) thin epitaxial electro-optic oxides. Because polar oxides are of prominent interest as a mechanism for the formation of the two-dimensional electron gas, I start with a study of polar semiconductor Co3O4. Ellipsometry reveals a direct band gap of 0.75 eV, and magnetic measurements show the signature of antiferromagnetic ordering at 49 K, higher than the typical bulk value. Next, I look closer at the role of defects by studying the highly conducting layer at the crystalline [gamma]-alumina/SrTiO3 (STO) interface which is attributed to oxygen vacancies. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator. Building upon these results, I show that even at room temperature, out-diffusion of oxygen from SrTiO3 during epitaxy of highly spin-split semiconductor EuO epitaxy creates a highly conductive layer of oxygen vacancies on the SrTiO3 side of the interface. The films are ferromagnetic with a Curie temperature of 70 K and display giant magnetoresistance below the transition temperature. Leveraging this approach offers an as-yet unexplored route to seamlessly integrate ferromagnetism and the oxide two-dimensional electron gas for the development of novel nano-oxide spintronic devices. The large effective Pockels coefficient for high-quality epitaxial BaTiO3 (BTO) films on Si distinguishes BaTiO3 as a highly promising material for integrated silicon nanophotonics. However, the linear electro-optic effect in BaTiO3 thin films determined in previous experiments clearly shows deteriorated properties compared to bulk BTO crystals. First, I study BaTiO3 films of varied thickness in order to quantify the Pockels coefficient with respect to crystalline orientation. As a next step, I report on the strong dependence of the Pockels effect in BaTiO3 thin films on their microstructure, and provide guidelines on how to engineer thin films with strong electro-optic response. The 25× enhancement of the Pockels coefficient indicates a promising route to increase the performance of nonlinear oxides in the two-dimensional limit for the development of novel hybrid silicon photonic platform.
Integration Of Functional Oxides With Semiconductors
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Author : Alexander A. Demkov
language : en
Publisher:
Release Date : 2014-03-31
Integration Of Functional Oxides With Semiconductors written by Alexander A. Demkov and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03-31 with categories.
Heteroepitaxy Of Semiconductors
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Author : John E. Ayers
language : en
Publisher: CRC Press
Release Date : 2007-01-31
Heteroepitaxy Of Semiconductors written by John E. Ayers and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-01-31 with Technology & Engineering categories.
Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Heteroepitaxy Of Semiconductors
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Author : John E. Ayers
language : en
Publisher: CRC Press
Release Date : 2016-10-03
Heteroepitaxy Of Semiconductors written by John E. Ayers and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-03 with Technology & Engineering categories.
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Functional Oxide Heterostructures On Semiconductors
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Author : Hosung Seo
language : en
Publisher:
Release Date : 2013
Functional Oxide Heterostructures On Semiconductors written by Hosung Seo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Complex oxides exhibiting a wide variety of novel functional properties such as ferromagnetism and ferroelectricity have been extensively studied during the past decades. Recent advances in the field of oxide heteroepitaxy have made it possible to create and control hybrid oxide heterostructures with abrupt epitaxial interfaces. The oxide heteroepitaxy with the capability of controlling interface composition, strain, length scales, etc. has opened the totally new and exciting scientific avenue and has offered potential device applications to be explored. Epitaxial integration of functional oxides on semiconductor such as Si (001) and Ge(001) is of great interest, as it potentially leads to further technological development of these interesting oxide systems. In this dissertation, using density functional theory we explore physics and chemistry of novel oxide heterostructures and issues related to the integration of functional oxides on semiconductors. Oxide materials that are studied in this dissertation include polar LaAlO3, high-k dielectric SrTiO3, photocatalytic anatase TiO2 and CoO, and strongly correlated magnetic oxide LaCoO3.
Emerging Ferroelectric Materials And Devices
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Author :
language : en
Publisher: Elsevier
Release Date : 2023-11-27
Emerging Ferroelectric Materials And Devices written by and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-27 with Science categories.
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
Oxide And Nitride Semiconductors
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Author : Takafumi Yao
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-03-20
Oxide And Nitride Semiconductors written by Takafumi Yao and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-03-20 with Technology & Engineering categories.
This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.
Epitaxial Oxide Thin Films And Heterostructures
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Author :
language : en
Publisher:
Release Date : 1994
Epitaxial Oxide Thin Films And Heterostructures written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Dielectrics categories.