Fabrication Of Algaas Ingaas Pseudomorphic Modulation Doped Field Effect Transistors With P Doped Surface Layers
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Fabrication Of Algaas Ingaas Pseudomorphic Modulation Doped Field Effect Transistors With P Doped Surface Layers
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Author : Thomas E. McLaughlin
language : en
Publisher:
Release Date : 1986
Fabrication Of Algaas Ingaas Pseudomorphic Modulation Doped Field Effect Transistors With P Doped Surface Layers written by Thomas E. McLaughlin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with categories.
In this thesis modulation doped field-effect transistors (MODFETs) were fabricated. Two recently developed improvements to the MODFET structure were incorporated to produce an electronic device that had never before been fabricated. Highly p-doped surface layers were incorporated under the gate contact of the device. These layers have been shown to increase the Schottky barrier height at the MODFETs. Pseudomorphic AlGaAs/InGaAs technology was also incorporated for its proven unsurpassed electron saturation velocity and resulting high speed of operation. To evaluate the response of these ES pseudomorphic devices, their characteristics were measured and compared directly with those of reference samples fabricated at the reference transistors were etched off chemically just before deposition of gate contact metal. The peak transconductance, threshold voltage, contact resistance and barrier height of all devices were measured at direct current (DC). Also, microwave S-parameters were measured over the range of 2 to 12 gigahertz (GHz).
Fabrication Of Algaas Ingaas Pseudomorphic Modulation Doped Field Effect Transistors With P Doped Surface Layers
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Author : Thomas E. McLaughlin (1LT, USAF.)
language : en
Publisher:
Release Date : 1986
Fabrication Of Algaas Ingaas Pseudomorphic Modulation Doped Field Effect Transistors With P Doped Surface Layers written by Thomas E. McLaughlin (1LT, USAF.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Gallium arsenide semiconductors categories.
Modulation Doped Field Effect Transistors
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Author : Heinrich Daembkes
language : en
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
Release Date : 1991
Modulation Doped Field Effect Transistors written by Heinrich Daembkes and has been published by Institute of Electrical & Electronics Engineers(IEEE) this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Technology & Engineering categories.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1991
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Aeronautics categories.
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Jjap Letters
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Author :
language : en
Publisher:
Release Date : 1994
Jjap Letters written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Physics categories.
Technical Reports Awareness Circular Trac
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Author :
language : en
Publisher:
Release Date : 1989-08
Technical Reports Awareness Circular Trac written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989-08 with Science categories.
Physics Briefs
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Author :
language : en
Publisher:
Release Date : 1993
Physics Briefs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Physics categories.
Micro And Nanoelectronics Devices Circuits And Systems
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Author : Trupti Ranjan Lenka
language : en
Publisher: Springer Nature
Release Date : 2023-10-04
Micro And Nanoelectronics Devices Circuits And Systems written by Trupti Ranjan Lenka and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-10-04 with Technology & Engineering categories.
This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2023). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.
Devices Based On Low Dimensional Semiconductor Structures
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Author : M. Balkanski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Devices Based On Low Dimensional Semiconductor Structures written by M. Balkanski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.
Fabrication And I V Characterization Of Algaas Gaas Modfets With P Type Surface Layers Grown By Molecular Beam Epitaxy
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Author : K. Szabo
language : en
Publisher:
Release Date : 1984
Fabrication And I V Characterization Of Algaas Gaas Modfets With P Type Surface Layers Grown By Molecular Beam Epitaxy written by K. Szabo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with categories.
The effects of highly doped p+ surface layers on the Schottky barrier of n-type AlGaAs/GaAs MODFETs (Modulation doped FET's) were investigated for this thesis. Normal AlGaAs/GaAs MODFET structures were first grown on top of semi-insulating GaAs structures using molecular beam epitaxy (MBE) and then thin p+ (50 A) surface layers were grown on top of the MODFET structures. Two different sequential evaporations (Au/Ni/Au/Ge/Ni, Au/Ni/Au/Ge) were used for the source/drain contacts. The results show that these two sequential evaporations do not work on MODFETs with p+ surface layers. High resistance, rectifying source/drain contacts resulted. Originator-supplied keywords include: Aluminum gallium arsenide, Heterojunctions, Field effect transistors, and Schottky barrier devices.