Final Report On Research And Development On Fabrication Of Pin And Lid Detectors And The Dry Run Interface System
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Final Report On Research And Development On Fabrication Of Pin And Lid Detectors And The Dry Run Interface System
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Author :
language : en
Publisher:
Release Date : 1965
Final Report On Research And Development On Fabrication Of Pin And Lid Detectors And The Dry Run Interface System written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1965 with Detectors categories.
Part I Fabrication Process For High Voltage Pin Detectors Part Ii Appendix Research And Development On Fabrication Of Pin And Lid Detectors And The Dry Run Interface System
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Author :
language : en
Publisher:
Release Date : 1964
Part I Fabrication Process For High Voltage Pin Detectors Part Ii Appendix Research And Development On Fabrication Of Pin And Lid Detectors And The Dry Run Interface System written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1964 with categories.
Government Wide Index To Federal Research Development Reports
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Author :
language : en
Publisher:
Release Date : 1965-03
Government Wide Index To Federal Research Development Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1965-03 with Government publications categories.
Lithium Drifted Germanium Detectors Their Fabrication And Use
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Author : I. C. Brownridge
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Lithium Drifted Germanium Detectors Their Fabrication And Use written by I. C. Brownridge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1995
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.
Monthly Catalog Of United States Government Publications
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Author :
language : en
Publisher:
Release Date : 1965
Monthly Catalog Of United States Government Publications written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1965 with Government publications categories.
Nuclear Science Abstracts
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Author :
language : en
Publisher:
Release Date : 1965
Nuclear Science Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1965 with Nuclear energy categories.
Government Wide Index To Federal Research Development Reports
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Author :
language : en
Publisher:
Release Date : 1965
Government Wide Index To Federal Research Development Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1965 with Science categories.
Reports Received By Division Of Technical Information Extension
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Author : U.S. Atomic Energy Commission. Division of Technical Information
language : en
Publisher:
Release Date :
Reports Received By Division Of Technical Information Extension written by U.S. Atomic Energy Commission. Division of Technical Information and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on with Nuclear energy categories.
Nasa Technical Note
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Author :
language : en
Publisher:
Release Date : 1968
Nasa Technical Note written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1968 with categories.