Gallium Nitride And Related Materials Ii Volume 468
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Gallium Nitride And Related Materials Ii Volume 468
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Author : C. R. Abernathy
language : en
Publisher: Materials Research Society
Release Date : 1997-08-13
Gallium Nitride And Related Materials Ii Volume 468 written by C. R. Abernathy and has been published by Materials Research Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-08-13 with Technology & Engineering categories.
This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Gallium Nitride And Related Materials
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Author :
language : en
Publisher:
Release Date : 1997
Gallium Nitride And Related Materials written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electroluminescent devices categories.
Iii Nitride Semiconductors
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Author : M.O. Manasreh
language : en
Publisher: Elsevier
Release Date : 2000-12-06
Iii Nitride Semiconductors written by M.O. Manasreh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-06 with Science categories.
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Gan Based Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Proceedings Of The Second Symposium On Iii V Nitride Materials And Processes
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Author : C. R. Abernathy
language : en
Publisher: The Electrochemical Society
Release Date : 1998
Proceedings Of The Second Symposium On Iii V Nitride Materials And Processes written by C. R. Abernathy and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.
Materials For Optical Limiting Ii Volume 479
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Author : Richard Lee Sutherland
language : en
Publisher:
Release Date : 1997-12-30
Materials For Optical Limiting Ii Volume 479 written by Richard Lee Sutherland and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-12-30 with Technology & Engineering categories.
The proliferation of lasers and systems employing lasers has brought with it the potential for adverse effects from these bright, coherent light sources. This includes the possibility of damage from pulsed lasers, as well as temporary blinding by continuous-waver lasers. With nearly every wavelength possible being emitted by these sources, there exists a need to develop optical limiters and tunable filters which can suppress undesired radiation of any wavelength. This book addresses a number of materials and devices which have the potential for meeting the challenge. The proceedings is divided into five parts. Parts I and II cover research in organic and inorganic materials primarily based on nonlinear absorption or phase transitions for optical limiting of pulsed lasers. Part III includes photo-refractive materials and liquid crystals which find primary applications in dynamic filters. Part IV covers various aspects of device and material characterization, including nonlinear beam propagation effects. Theoretical modelling of materials properties is the subject of Part V.
Proceedings Of The Third Symposium On Iii V Nitride Materials And Processes
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Author : T. D. Moustakas
language : en
Publisher: The Electrochemical Society
Release Date : 1999
Proceedings Of The Third Symposium On Iii V Nitride Materials And Processes written by T. D. Moustakas and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Technology & Engineering categories.
Infrared Applications Of Semiconductors Ii Volume 484
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Author : Donald L. McDaniel
language : en
Publisher:
Release Date : 1998-04-20
Infrared Applications Of Semiconductors Ii Volume 484 written by Donald L. McDaniel and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-04-20 with Technology & Engineering categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Low Dimensional Nitride Semiconductors
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Author : Bernard Gil
language : en
Publisher:
Release Date : 2002
Low Dimensional Nitride Semiconductors written by Bernard Gil and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.
Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.
Science And Technology Of Semiconductor Surface Preparation Volume 477
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Author : Gregg S. Hagashi
language : en
Publisher:
Release Date : 1997-09-30
Science And Technology Of Semiconductor Surface Preparation Volume 477 written by Gregg S. Hagashi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-09-30 with Technology & Engineering categories.
The focus of semiconductor wafer processing is rapidly changing. Pure device performance is no longer sufficient to ensure a technology's success as IC chips approach 1GB. Yield, reliability, cost and manufacturability are principal drivers of the industry. Great strides have been made in understanding the science and impact of front-end (pre-metal) chemical surface preparations and are beginning to influence the 'real' technology and its evolution. Efforts in understanding particle and metals removal, along with Si surface etching and microroughness are prime examples of areas where work is beginning to pay off together with processes related to the back-end (post-metal). The focus of this book is to report new findings and to discuss surface preparation with an emphasis on gaining a mechanistic understanding of the underlying science upon which the technology is based. Topics include: megasonic cleaning; SC1 technology; surface preparation and gate oxide reliability; CMP/CMP cleaning; post-etch processing; surface microroughness; wet chemical cleaning and gate oxide integrity; analytical studies of surfaces; wet chemical cleaning/etching; dry wafer cleaning; and environmentally friendly processing.