High Speed High Power Gainp Gaas Hbts And Their Application To Microwave Monolithic Integrated Circuits Mmics
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High Speed High Power Gainp Gaas Hbts And Their Application To Microwave Monolithic Integrated Circuits Mmics
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Author : Jae Woo Park
language : en
Publisher:
Release Date : 2000
High Speed High Power Gainp Gaas Hbts And Their Application To Microwave Monolithic Integrated Circuits Mmics written by Jae Woo Park and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Advances In Microwaves And Lightwaves
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Author :
language : en
Publisher: Allied Publishers
Release Date :
Advances In Microwaves And Lightwaves written by and has been published by Allied Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
Dissertation Abstracts International
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Author :
language : en
Publisher:
Release Date : 2000
Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Dissertations, Academic categories.
Compact Ku Band Transmitter Design For Satellite Communication Applications
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Author : Joy Laskar
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-05-08
Compact Ku Band Transmitter Design For Satellite Communication Applications written by Joy Laskar and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-05-08 with Technology & Engineering categories.
This volume reviews approaches to and topologies of Ku-band transmitters. It explores the advantages and disadvantages of these transmitters along with critical design criteria necessary to enhance system performance. Readers will learn to analyze, design and characterize transceiver modules.
Rfic And Mmic Design And Technology
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Author : I.D. Robertson
language : en
Publisher: IET
Release Date : 2001-11-30
Rfic And Mmic Design And Technology written by I.D. Robertson and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-11-30 with Technology & Engineering categories.
This book gives an in-depth account of GaAs, InP and SiGe, technologies and describes all the key techniques for the design of amplifiers, ranging from filters and data converters to image oscillators, mixers, switches, variable attenuators, phase shifters, integrated antennas and complete monolithic transceivers.
Ieee Microwave And Millimeter Wave Monolithic Circuits Symposium Digest Of Papers
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Author :
language : en
Publisher:
Release Date : 1994
Ieee Microwave And Millimeter Wave Monolithic Circuits Symposium Digest Of Papers written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Integrated circuits categories.
American Doctoral Dissertations
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Author :
language : en
Publisher:
Release Date : 1999
American Doctoral Dissertations written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Dissertation abstracts categories.
Low Frequency Noise Reliability Correlation And Noise Power Characteristics Of Gaas Hbts And High Speed Integrated Circuits
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Author : Saeed Mohammadi
language : en
Publisher:
Release Date : 2000
Low Frequency Noise Reliability Correlation And Noise Power Characteristics Of Gaas Hbts And High Speed Integrated Circuits written by Saeed Mohammadi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation
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Author : Xiang Liu
language : en
Publisher:
Release Date : 2011
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation written by Xiang Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Bipolar transistors categories.
Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.