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Iii Nitride Semiconductor Materials

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Iii Nitride

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Author : Zhe Chuan Feng
language : en
Publisher: Imperial College Press
Release Date : 2006

Iii Nitride written by Zhe Chuan Feng and has been published by Imperial College Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Technology & Engineering categories.

III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.

Iii Nitride Semiconductors

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Author : M.O. Manasreh
language : en
Publisher: Elsevier
Release Date : 2000-12-06

Iii Nitride Semiconductors written by M.O. Manasreh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-06 with Science categories.

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Iii V Nitride Semiconductors

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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2002-09-06

Iii V Nitride Semiconductors written by Edward T. Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-09-06 with Technology & Engineering categories.

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Iii V Nitride Semiconductors

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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2022-10-30

Iii Nitride Materials Devices And Nano Structures

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Author : Feng Zhe Chuan
language : en
Publisher: World Scientific
Release Date : 2017-04-20

Iii Nitride Materials Devices And Nano Structures written by Feng Zhe Chuan and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-04-20 with Technology & Engineering categories.

Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications. The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources". Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps. Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009. Contents:General:Comprehensive Theoretical and Experimental Studies on III-Nitrides, Doping, Nano-Structures and LEDs (Jinmin Li, Zhiqiang Liu, Xiaoyan Yi and Junxi Wang)Waste Energy Harvesting Using III-Nitride Materials (E Ghafari, E Witkoske, Y Liu, C Zhang, X Jiang, A Bukowski, B Kucukgok, M Lundstrom; I T Ferguson and N Lu)III-Nitride Nanostructures for Intersubband Optoelectronics (C B Lim, A Ajay, J Lähnemann, D A Browne and E Monroy)GaN-Based Photodetectors (Ke Jiang, Xiaojuan Sun, Hang Song and Dabing Li)III-Nitride Materials:Single Crystal AlN: Growth by Modified Physical Vapor Transport and Properties (Honglei Wu and Ruisheng Zheng)Towards Understanding and Control of Nanoscale Phase Segregation in Indium-Gallium-Nitride Alloys (Yohannes Abate, Viktoriia E Babicheva, Vladislav S Yakovlev and Nikolaus Dietz)Investigating Structural and Optical Characteritics of III-Nitride Semiconductor Materials (Yi Liang, Xiaodong Jiang, Devki N Talwar, Liangyu Wan, Gu Xu and Zhe Chuan Feng)III-Nitride Devices and Nano-Structures:III-Nitride Nano-Structures and Improving the Luminescence Efficiency for Quantum Well LEDs (Peng Chen)Fabrication and Characterization of Green Resonant-Cavity Light-Emitting Diodes Prepared by Wafer Transfer Technologies (Shih-Yung Huang and Ray-Hua Horng)Nanotexturing Effects in GaN/InGaN Multi-Quantum-Wells LED Planar Structures (S J Xu)Group III-Nitride Nanostructures for Light-Emitting Devices and Beyond (Je-Hyung Kim, Young-Ho Ko and Yong-Hoon Cho) Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.

Iii V Nitride Semiconductors

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Author : E. T. Yu
language : en
Publisher:
Release Date : 2019

Iii V Nitride Semiconductors written by E. T. Yu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with Nitrides categories.

Optoelectronic Devices

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Author : M Razeghi
language : en
Publisher: Elsevier
Release Date : 2004

Optoelectronic Devices written by M Razeghi and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Iii Nitride Semiconductors And Their Modern Devices

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Author : Bernard Gil
language : en
Publisher: Oxford University Press
Release Date : 2013-08-22

Iii Nitride Semiconductors And Their Modern Devices written by Bernard Gil and has been published by Oxford University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-08-22 with Science categories.

All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

Iii Nitride Devices And Nanoengineering

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Author : Zhe Chuan Feng
language : en
Publisher: World Scientific
Release Date : 2008

Iii Nitride Devices And Nanoengineering written by Zhe Chuan Feng and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Iii Nitride Semiconductors

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Author : Hongxing Jiang
language : en
Publisher: CRC Press
Release Date : 2002-07-26

Iii Nitride Semiconductors written by Hongxing Jiang and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-07-26 with Technology & Engineering categories.

This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices. Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Iii Nitride Semiconductor Materials

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