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Iii V Microelectronics


Iii V Microelectronics
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Iii V Compound Semiconductors


Iii V Compound Semiconductors
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Author : Tingkai Li
language : en
Publisher: CRC Press
Release Date : 2016-04-19

Iii V Compound Semiconductors written by Tingkai Li and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-19 with Science categories.


Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more



Iii V Integrated Circuit Fabrication Technology


Iii V Integrated Circuit Fabrication Technology
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Author : Shiban Tiku
language : en
Publisher: CRC Press
Release Date : 2016-04-27

Iii V Integrated Circuit Fabrication Technology written by Shiban Tiku and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-27 with Science categories.


GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing



Doping In Iii V Semiconductors


Doping In Iii V Semiconductors
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Author : E. Fred Schubert
language : en
Publisher: E. Fred Schubert
Release Date : 2015-08-18

Doping In Iii V Semiconductors written by E. Fred Schubert and has been published by E. Fred Schubert this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-18 with Science categories.


This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.



Fundamentals Of Iii V Semiconductor Mosfets


Fundamentals Of Iii V Semiconductor Mosfets
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Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16

Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.


Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.



Handbook For Iii V High Electron Mobility Transistor Technologies


Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14

Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.


This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots



Microelectronics Research Development


Microelectronics Research Development
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Author :
language : en
Publisher:
Release Date : 1986

Microelectronics Research Development written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Electronic government information categories.




Microelectronic Materials


Microelectronic Materials
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Author : C.R.M. Grovenor
language : en
Publisher: CRC Press
Release Date : 1989-01-01

Microelectronic Materials written by C.R.M. Grovenor and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989-01-01 with Science categories.


This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.



Microelectronics Systems And Devices


Microelectronics Systems And Devices
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Author : Owen Bishop
language : en
Publisher: Routledge
Release Date : 2013-06-17

Microelectronics Systems And Devices written by Owen Bishop and has been published by Routledge this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-17 with Technology & Engineering categories.


A major new Newnes college text for GNVQ, HNC/HND etc (2000 specifications) A comprehensive student-centred text - not tied to one syllabus Fully up-to-date - includes microcontrollers



Future Trends In Microelectronics


Future Trends In Microelectronics
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Author : Serge Luryi
language : en
Publisher: John Wiley & Sons
Release Date : 2016-09-12

Future Trends In Microelectronics written by Serge Luryi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-12 with Technology & Engineering categories.


Presents the developments in microelectronic-related fields, with comprehensive insight from a number of leading industry professionals The book presents the future developments and innovations in the developing field of microelectronics. The book’s chapters contain contributions from various authors, all of whom are leading industry professionals affiliated either with top universities, major semiconductor companies, or government laboratories, discussing the evolution of their profession. A wide range of microelectronic-related fields are examined, including solid-state electronics, material science, optoelectronics, bioelectronics, and renewable energies. The topics covered range from fundamental physical principles, materials and device technologies, and major new market opportunities. Describes the expansion of the field into hot topics such as energy (photovoltaics) and medicine (bio-nanotechnology) Provides contributions from leading industry professionals in semiconductor micro- and nano-electronics Discusses the importance of micro- and nano-electronics in today’s rapidly changing and expanding information society Future Trends in Microelectronics: Journey into the Unknown is written for industry professionals and graduate students in engineering, physics, and nanotechnology.