Inp Ingaas Heterojunction Bipolar Transistors Grown On Ge P Co Implanted Inp Substrates By Metal Organic Molecular Bean Epitaxy
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Inp Ingaas Heterojunction Bipolar Transistors Grown On Ge P Co Implanted Inp Substrates By Metal Organic Molecular Bean Epitaxy
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Author : W. J. Sung
language : en
Publisher:
Release Date : 2002
Inp Ingaas Heterojunction Bipolar Transistors Grown On Ge P Co Implanted Inp Substrates By Metal Organic Molecular Bean Epitaxy written by W. J. Sung and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high- frequency performance 1-4 and are widely used for optical fiber transmission 5-7. However; the current mesa HBT structure utilizes a very thick, highly doped n+InGaAs layer for the subcollector contact. This added mesa height makes multilevel interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, rip has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.
Proceedings Ieee Cornell Conference On High Performance Devices
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Author :
language : en
Publisher:
Release Date : 2002
Proceedings Ieee Cornell Conference On High Performance Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Integrated circuits categories.
Proceedings
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Author :
language : en
Publisher:
Release Date : 2002
Proceedings written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Compound semiconductors categories.
Electrical Electronics Abstracts
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Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.
Inp Ingaas Heterojunction Bipolar Transistors And Field Effect Transistors Grown By Gas Source Molecular Beam Epitaxy
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Author : Hao-Chung Kuo
language : en
Publisher:
Release Date : 1999
Inp Ingaas Heterojunction Bipolar Transistors And Field Effect Transistors Grown By Gas Source Molecular Beam Epitaxy written by Hao-Chung Kuo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with categories.
Physics Briefs
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Author :
language : en
Publisher:
Release Date : 1994
Physics Briefs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Physics categories.
Ceramic Abstracts
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Author :
language : en
Publisher:
Release Date : 1994
Ceramic Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Ceramics categories.
Development Of Metalorganic Molecular Beam Epitaxy For The Growth Of Indium 0 53 Gallium 0 47 Arsenic Indium Phosphide Heterojunction Bipolar Transistors And Quantum Well Optoelectronic Devices
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Author : Steven Lee Jackson
language : en
Publisher:
Release Date : 1994
Development Of Metalorganic Molecular Beam Epitaxy For The Growth Of Indium 0 53 Gallium 0 47 Arsenic Indium Phosphide Heterojunction Bipolar Transistors And Quantum Well Optoelectronic Devices written by Steven Lee Jackson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with categories.
Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped In$\rm\sb{0.53}Ga\sb{0.47}$As/InP heterojunction bipolar transistors (HBTs). Improvements in reproducibility of alloy composition and layer thickness for $\rm In\sb xGa\sb{1-x}As$ and InP, which are afforded by MOMBE relative to MBE, offer clear advantages for manufacturing. The potential for reduction of the H passivation of C acceptors and substrate temperature sensitivity of the alloy composition, using CCl$\sb4$ as the C source, offers advantages relative to MOCVD. However, the lack of an efficient gaseous n-type dopant source limits the potential for scalability of MOMBE. This thesis describes recent work on the development of MOMBE for the growth of C-doped $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs. Issues relevant to obtaining abrupt heterointerfaces, the development of a new gaseous Si dopant source, SiBr$\sb4$, and the sources of H passivation of C acceptors in C-doped $\rm In\sb{0.53}Ga\sb{0.47}As$ have been investigated. The use of a common Ta-baffled hydride cracker for the dissociation of AsH$\sb3$ and PH$\sb3$ at 950$\sp\circ$C was found to result in the generation of As$\sb2$, P$\sb2$, and H$\sb2$. However, severe group V memory effects were observed for P and As. Significantly faster switching was obtained, by using separate open Ta tube crackers. Single and multiple quantum well $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ heterostructures containing quantum wells as narrow as 10 A exhibit intense photoluminescence and ninth order satellite peaks in resolution x-ray diffraction rocking curves. SiBr$\sb4$ has been demonstrated as an extremely efficient gaseous Si doping source which is compatible with MOMBE. Net electron concentrations of n = $\rm2.3\times10\sp{20}\ cm\sp{-3}$ have been obtained in InP grown at 450$\sp\circ$C without morphology degradation. Specific contact resistances of $\rm\rho\sb c=6\times10\sp{-8}\ \Omega$-cm$\sp{2}$ have been obtained by using nonalloyed Ti/Pt/Au contacts directly to these heavily-doped InP layers. $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs using InP contact layers with comparably low specific contact resistances have been demonstrated. A blue shift in the photoluminescence peak energy of approximately 265 meV is observed for InP layers doped to n = $\rm7\times10\sp{19}\ cm\sp{-3}.$ Carbon doping of $\rm In\sb{0.53}Ga\sb{0.47}As$ in gas source molecular beam epitaxy and MOMBE using CCl$\sb4$ has been investigated. Net hole concentrations of p = $\rm1.8\times10\sp{20}\ cm\sp{-3}$ have been obtained with negligible H passivation for hole concentrations as high as p = $\rm8\times10\sp{19}\ cm\sp{-3}$. The degree of H passivation was found to be highly dependent on the AsH$\sb3$ cracking temperature with an enhanced effect at substrate temperatures ${
The Engineering Index Annual
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Author :
language : en
Publisher:
Release Date : 1992
The Engineering Index Annual written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Engineering categories.
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
International Aerospace Abstracts
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Author :
language : en
Publisher:
Release Date : 1997
International Aerospace Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Aeronautics categories.