Investigation Of Inp And Gaas Based Heterojunction Bipolar Transistors Hbts
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Investigation Of Inp And Gaas Based Heterojunction Bipolar Transistors Hbts
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Author : 陳梓斌
language : en
Publisher:
Release Date : 2009
Investigation Of Inp And Gaas Based Heterojunction Bipolar Transistors Hbts written by 陳梓斌 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Sige Gaas And Inp Heterojunction Bipolar Transistors
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Author : Jiann S. Yuan
language : en
Publisher: Wiley-Interscience
Release Date : 1999-04-12
Sige Gaas And Inp Heterojunction Bipolar Transistors written by Jiann S. Yuan and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-04-12 with Technology & Engineering categories.
An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation
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Author : Xiang Liu
language : en
Publisher:
Release Date : 2011
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation written by Xiang Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Bipolar transistors categories.
Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Current Trends In Heterojunction Bipolar Transistors
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Author : M. F. Chang
language : en
Publisher: World Scientific
Release Date : 1996
Current Trends In Heterojunction Bipolar Transistors written by M. F. Chang and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Technology & Engineering categories.
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Studies On Inp Based Heterojunction Bipolar Transistors Hbts For Mmic Applications
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Author : Hong Wang
language : en
Publisher:
Release Date : 2001
Studies On Inp Based Heterojunction Bipolar Transistors Hbts For Mmic Applications written by Hong Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Inp Based Heterojunction Bipolar Transistor Technology For High Speed Devices And Circuits
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Author : John Charles Cowles (Jr.)
language : en
Publisher:
Release Date : 1994
Inp Based Heterojunction Bipolar Transistor Technology For High Speed Devices And Circuits written by John Charles Cowles (Jr.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with categories.
Inp Based Materials And Devices
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Author : Osamu Wada
language : en
Publisher: Wiley-Interscience
Release Date : 1999-04-13
Inp Based Materials And Devices written by Osamu Wada and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-04-13 with Science categories.
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Heterojunction Bipolar Transistors For Circuit Design
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Author : Jianjun Gao
language : en
Publisher: John Wiley & Sons
Release Date : 2015-04-27
Heterojunction Bipolar Transistors For Circuit Design written by Jianjun Gao and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-04-27 with Technology & Engineering categories.
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Design Of Gallium Arsenide And Indium Phosphide Based Heterojunction Bipolar Transistors For High Speed Performance Gallium Arsenide Indium Phosphide
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Author : JUNTAO HU
language : en
Publisher:
Release Date : 1991
Design Of Gallium Arsenide And Indium Phosphide Based Heterojunction Bipolar Transistors For High Speed Performance Gallium Arsenide Indium Phosphide written by JUNTAO HU and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
latter devices are 2.17, 1.02 and 1.11 ps, respectively.
Proceedings Of The Symposium On Wide Bandgap Semiconductors And Devices And The Twenty Third State Of The Art Program On Compound Semiconductors Sotapocs Xxiii
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Author : F. Ren
language : en
Publisher: The Electrochemical Society
Release Date : 1995
Proceedings Of The Symposium On Wide Bandgap Semiconductors And Devices And The Twenty Third State Of The Art Program On Compound Semiconductors Sotapocs Xxiii written by F. Ren and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Technology & Engineering categories.