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Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications


Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications
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Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications


Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications
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Author : Josep Maria Margarit
language : en
Publisher: Springer
Release Date : 2016-12-29

Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications written by Josep Maria Margarit and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-12-29 with Technology & Engineering categories.


This book describes the development of a new low-cost medium wavelength IR (MWIR) monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapor phase deposition (VPD) PbSe-based MWIR detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. In order to fulfill the operational requirements of VPD PbSe, this work proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation.



Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications


Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications
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Author : Josep Maria Margarit Taulé
language : en
Publisher:
Release Date : 2016

Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications written by Josep Maria Margarit Taulé and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.


La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.



Infrared Detectors And Emitters Materials And Devices


Infrared Detectors And Emitters Materials And Devices
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Author : Peter Capper
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27

Infrared Detectors And Emitters Materials And Devices written by Peter Capper and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.


An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.



Infrared Thermal Imaging


Infrared Thermal Imaging
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Author : Michael Vollmer
language : en
Publisher: John Wiley & Sons
Release Date : 2018-02-20

Infrared Thermal Imaging written by Michael Vollmer and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-02-20 with Science categories.


This new up-to-date edition of the successful handbook and ready reference retains the proven concept of the first, covering basic and advanced methods and applications in infrared imaging from two leading expert authors in the field. All chapters have been completely revised and expanded and a new chapter has been added to reflect recent developments in the field and report on the progress made within the last decade. In addition there is now an even stronger focus on real-life examples, with 20% more case studies taken from science and industry. For ease of comprehension the text is backed by more than 590 images which include graphic visualizations and more than 300 infrared thermography figures. The latter include many new ones depicting, for example, spectacular views of phenomena in nature, sports, and daily life.



Infrared Detectors


Infrared Detectors
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Author : Antonio Rogalski
language : en
Publisher: CRC Press
Release Date : 2010-11-15

Infrared Detectors written by Antonio Rogalski and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-11-15 with Science categories.


Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un



The Infrared Handbook


The Infrared Handbook
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Author : Environmental Research Institute of Michigan. Infrared Information and Analysis Center
language : en
Publisher:
Release Date : 1978

The Infrared Handbook written by Environmental Research Institute of Michigan. Infrared Information and Analysis Center and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with Infrared radiation categories.




Quantum Dot Photodetectors


Quantum Dot Photodetectors
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Author : Xin Tong
language : en
Publisher: Springer Nature
Release Date : 2021-09-17

Quantum Dot Photodetectors written by Xin Tong and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-17 with Technology & Engineering categories.


This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.



Technology For The United States Navy And Marine Corps 2000 2035


Technology For The United States Navy And Marine Corps 2000 2035
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Author :
language : en
Publisher: National Academies
Release Date : 1997

Technology For The United States Navy And Marine Corps 2000 2035 written by and has been published by National Academies this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with History categories.


The future national security environment will present the naval forces with operational challenges that can best be met through the development of military capabilities that effectively leverage rapidly advancing technologies in many areas. The panel envisions a world where the naval forces will perform missions in the future similar to those they have historically undertaken. These missions will continue to include sea control, deterrence, power projection, sea lift, and so on. The missions will be accomplished through the use of platforms (ships, submarines, aircraft, and spacecraft), weapons (guns, missiles, bombs, torpedoes, and information), manpower, materiel, tactics, and processes (acquisition, logistics, and so on.). Accordingly, the Panel on Technology attempted to identify those technologies that will be of greatest importance to the future operations of the naval forces and to project trends in their development out to the year 2035. The primary objective of the panel was to determine which are the most critical technologies for the Department of the Navy to pursue to ensure U.S. dominance in future naval operations and to determine the future trends in these technologies and their impact on Navy and Marine Corps superiority. A vision of future naval operations ensued from this effort. These technologies form the base from which products, platforms, weapons, and capabilities are built. By combining multiple technologies with their future attributes, new systems and subsystems can be envisioned. Technology for the United States Navy and Marine Corps, 2000-2035 Becoming a 21st-Century Force: Volume 2: Technology indentifies those technologies that are unique to the naval forces and whose development the Department of the Navy clearly must fund, as well as commercially dominated technologies that the panel believes the Navy and Marine Corps must learn to adapt as quickly as possible to naval applications. Since the development of many of the critical technologies is becoming global in nature, some consideration is given to foreign capabilities and trends as a way to assess potential adversaries' capabilities. Finally, the panel assessed the current state of the science and technology (S&T) establishment and processes within the Department of the Navy and makes recommendations that would improve the efficiency and effectiveness of this vital area. The panel's findings and recommendations are presented in this report.



Proceedings Of The Scientific Practical Conference Research And Development 2016


Proceedings Of The Scientific Practical Conference Research And Development 2016
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Author : K. V. Anisimov
language : en
Publisher: Springer
Release Date : 2017-12-04

Proceedings Of The Scientific Practical Conference Research And Development 2016 written by K. V. Anisimov and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-04 with Technology & Engineering categories.


This book is open access under a CC BY 4.0 license. It relates to the III Annual Conference hosted by The Ministry of Education and Science of the Russian Federation in December 2016. This event has summarized, analyzed and discussed the interim results, academic outputs and scientific achievements of the Russian Federal Targeted Programme “Research and Development in Priority Areas of Development of the Russian Scientific and Technological Complex for 2014–2020.” It contains 75 selected papers from 6 areas considered priority by the Federal Targeted Programme: computer science, ecology & environment sciences; energy and energy efficiency; lifesciences; nanoscience & nanotechnology and transport & communications. The chapters report the results of the 3-years research projects supported by the Programme and finalized in 2016.



Antimonide Based Infrared Detectors


Antimonide Based Infrared Detectors
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Author : Antoni Rogalski
language : en
Publisher:
Release Date : 2018

Antimonide Based Infrared Detectors written by Antoni Rogalski and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Antimonides categories.


"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--