Low Temperature Epitaxial Growth Of Semiconductors
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Low Temperature Epitaxial Growth Of Semiconductors
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Author : Takashi Hariu
language : en
Publisher: World Scientific
Release Date : 1991
Low Temperature Epitaxial Growth Of Semiconductors written by Takashi Hariu and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Technology & Engineering categories.
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Low Temperature Epitaxial Growth Of Iii Nitride Semiconductors On Silicon Carbide Templates By Remote Plasma Metal Organic Chemical Vapor Deposition
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Author : Robert Dubreuil
language : en
Publisher:
Release Date : 2017
Low Temperature Epitaxial Growth Of Iii Nitride Semiconductors On Silicon Carbide Templates By Remote Plasma Metal Organic Chemical Vapor Deposition written by Robert Dubreuil and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
Group III-Nitride (III-N) semiconductors are of high interest due to their thermal and electrical properties. Opposed to other III-V group semiconductors III-N semiconductors are hexagonal wurtzite structures that have a direct bandgap across the entire composition range. This wide bandgap range covers from the deep ultra-violet to the infrared region of the electromagnetic spectrum. This makes the III-N semiconductor group ideal for LEDs, laser diodes and photodetectors. This thesis presents an in-depth study to the growth of III-Nitrides on Silicon Carbide (SiC) templates. Due to the difficulty in growing bulk crystals for the III-Nitrides, non-native substrates must be used. Because of this, there exists a lattice mismatch between the substrates and thin films grown on top. SiC proves to be an ideal substrate as the lattice mismatch is around 3.5%. Thin films of III-N were grown upon commercially purchased SiC templates using remote plasma enhanced metal organic chemical vapor deposition (RP-MOCVD) in the Lakehead University Semiconductor Research Lab. Results were characterized using x-ray diffraction (XRD), atomic force microscope (AFM), Energy-dispersive X-ray spectroscopy (EDX) and Ramen spectroscopy.
Silicon Epitaxy
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Author :
language : en
Publisher: Elsevier
Release Date : 2001-09-26
Silicon Epitaxy written by and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-09-26 with Science categories.
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
The Influence Of Sicl4 Precursor On Low Temperature Chloro Carbon Sic Epitaxy Growth
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Author : Siva Prasad Kotamraju
language : en
Publisher:
Release Date : 2010
The Influence Of Sicl4 Precursor On Low Temperature Chloro Carbon Sic Epitaxy Growth written by Siva Prasad Kotamraju and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Chemical vapor deposition categories.
Significant progress in reducing the growth temperature of the SiC epitaxial growth became possible in the previous work by using new chloro-carbon epitaxial growth method. However, it was established that even in the new process, homogenous nucleation of Si in the gas phase limited the growth rate. In the present work, new chlorinated silicon precursor SiCl4 was investigated as a replacement for the traditional silicon precursor SiH4 during the low-temperature chlorocarbon epitaxial growth. The new process completely eliminated the homogenous nucleation in the gas phase. Growth rate of 5-6 [micro] m/h was achieved at 1300°C compared to less than 3 [micro] m/h in the SiH4-based growth. The growth dependence on the C/Si ratio revealed that the transition from the C-supply-limited to the Si-supply-limited growth mode takes place at the value of the C/Si ratio much higher than unity, suggesting that certain carbon-containing species are favorably excluded from the surface reactions in the new process. Morphology degradation mechanisms, which are unique for the lowtemperature growth, were observed outside the established process window. Prior to this work, it remained unclear if CH3Cl simply served as a source of Cl to suppress homogeneous nucleation in the gas phase, or if it brought some other unknown improvements. In this work true benefits of CH3Cl in providing unique improvement mechanisms have been revealed. It was established that CH3Cl provided a much wider process window compared to C3H. In contrast, even a very significant supply of extra Cl from a chlorinated silicon precursor or from HCl during the C33H-based growth could not provide a similar benefit. The combination of the chloro-carbon and the chloro-silane precursors was also investigated at conventional growth temperature. High-quality thick epitaxial layers, with the growth rate up to 100 [micro] m/h were obtained, and the factors influencing the growth rate and morphology were investigated. Extensive optical and electrical characterization of the low-temperature and the regular-temperature epitaxial layers was conducted. The device-quality of the low temperature chloro--carbon epilayers was validated for the first time since the development of the chloro-carbon epitaxial process in the year 2005 by fabricating simple Schottky diodes and investigating their electrical characteristics.
Epitaxial Growth Of Semimetallic Hybrid Substrate Systems For Low Temperature Optoelectronic Integration Of Nitrides On Silicon
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Author : Yu Jing An
language : en
Publisher:
Release Date : 2008
Epitaxial Growth Of Semimetallic Hybrid Substrate Systems For Low Temperature Optoelectronic Integration Of Nitrides On Silicon written by Yu Jing An and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Zirconium alloys categories.
Handbook Of Crystal Growth
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Author : Tom Kuech
language : en
Publisher: Elsevier
Release Date : 2014-11-02
Handbook Of Crystal Growth written by Tom Kuech and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-02 with Science categories.
Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Characterization Of Defects And Evaluation Of Material Quality Of Low Temperature Epitaxial Growth
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Author : Hrishikesh Das
language : en
Publisher:
Release Date : 2010
Characterization Of Defects And Evaluation Of Material Quality Of Low Temperature Epitaxial Growth written by Hrishikesh Das and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Epitaxy categories.
A novel process for low-temperature (LT) epitaxial growth of silicon carbide (SiC) by replacing the growth precursor propane with chloro-methane was recently developed at Mississippi State University. However, only limited information was available about the defects and impurity incorporation in the various types of epitaxial layers produced by this new method like blanket epitaxial layers, selectively grown epitaxial mesas, and highly doped epitaxial layers, prior to their comprehensive characterization in this work. Molten potassium hydroxide (KOH) etching, mechanical polishing and a variety of other characterizing techniques were used to delineate and identify the defects both in the epilayer and substrates. Under optimum growth conditions, the concentration of defects in the epitaxial layers was found to be less than that in the substrate, which established the good quality of the LT growth process. Defect concentrations, on selectively grown epitaxial layers, strongly depended on the crystallographic orientation of the mesa sidewall. The addition of HCl to the growth process, aimed at increasing the growth rate, caused a significant concentration of triangular defects (TDs) to be formed in the epitaxial layers. The TDs were traced down to the substrate by a combination of repeated polishing and molten KOH etching steps. The TDs were found not to originate from any substrate defects. Their origin was traced to polycrystalline silicon islands which form on the surface during growth and subsequently get evaporated away, which had made it impossible to detect them and suspect their influence on the TD generation prior to this work. The TDs were found to include single or multiple stacking faults bound by partial dislocations and, in some cases, inclusions of other SiC polytypes. Gradual degradation of the epitaxial morphology was found in heavily aluminum doped p+ layers, with an increase in the level of doping, followed by much steeper degradation when approaching the solubility limit of Al in 4H-SiC. Precipitates were the dominating defect at the highest levels of doping and were observed beyond a doping of 3.5x1020 cm-3. A dislocation generation model for heavily doped epitaxial layers was developed accounting for the stress in the lattice caused by Al doping.
Low Temperature Epitaxial Growths Of Iii Nitride Semiconductors On Ito Glass Substrates
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Author : Jonny Tot
language : en
Publisher:
Release Date : 2016
Low Temperature Epitaxial Growths Of Iii Nitride Semiconductors On Ito Glass Substrates written by Jonny Tot and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Chapter 1 serves as an introduction to the electronic, optical and physical properties of the nitride material system that have made it a heavily researched group of semiconductors. The need for heteroepitaxy and various commercially successful substrates will be discussed along with the motivation of this thesis. Some general history will be provided as well as the challenges faced by these materials in commercialization. Chapter 2 will focus on current and past growth techniques used for nitrides, outlining how epitaxy occurs in these systems with their respective benefits and faults. Chapter 3 will give an overview on the characterization tools used throughout this research. An understanding of how these tools operate will assist in interpreting data correctly. Combined with knowledge from chapter 2 it may also give insight on what needs to change about growth conditions to optimize growth. Chapter 4 will present the growth results from various characterization tools discussed in chapter 3. Conclusions about the data from each material system will be discussed. Chapter 5 will focus on theoretical calculations for InN. Initial results for InN show it to be the most promising material. A theoretical analysis of common impurities on the electronic band structure of InN will help in interpreting optical properties of the material. The central research contributions of the author in this thesis can be summarized as the development of III-Nitrides growth recipes for each material, characterization of the results, and the application of LCAO theory to the InN system for common impurities found in the growth technique examined.
Low Temperature Silicon Sputter Deposition Epitaxy For 3 D Integrated Circuits
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Author : Pailu Dennis Wang
language : en
Publisher:
Release Date : 1987
Low Temperature Silicon Sputter Deposition Epitaxy For 3 D Integrated Circuits written by Pailu Dennis Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with categories.
Semiconductor Materials For Optoelectronics And Ltmbe Materials
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Author : J.P. Hirtz
language : en
Publisher: Elsevier
Release Date : 2016-07-29
Semiconductor Materials For Optoelectronics And Ltmbe Materials written by J.P. Hirtz and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-07-29 with Science categories.
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.