Materials Physics And Device Development For Improved Efficiency Of Gan Hemt High Power Amplifiers
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Materials Physics And Device Development For Improved Efficiency Of Gan Hemt High Power Amplifiers
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Author : Steven Ross Kurtz
language : en
Publisher:
Release Date : 2005
Materials Physics And Device Development For Improved Efficiency Of Gan Hemt High Power Amplifiers written by Steven Ross Kurtz and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Algan Gan Hemt Power Amplifiers With Optimized Power Added Efficiency For X Band Applications
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Author : Jutta Kühn
language : en
Publisher: KIT Scientific Publishing
Release Date : 2011
Algan Gan Hemt Power Amplifiers With Optimized Power Added Efficiency For X Band Applications written by Jutta Kühn and has been published by KIT Scientific Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Power amplifiers categories.
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Emerging Trends In Terahertz Solid State Physics And Devices
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Author : Arindam Biswas
language : en
Publisher: Springer Nature
Release Date : 2020-03-20
Emerging Trends In Terahertz Solid State Physics And Devices written by Arindam Biswas and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-20 with Science categories.
This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics.
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Advanced Technologies For Improving High Frequency Performance Of Algan Gan High Electron Mobility Transistors
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Author : Jinwook Will Chung
language : en
Publisher:
Release Date : 2008
Advanced Technologies For Improving High Frequency Performance Of Algan Gan High Electron Mobility Transistors written by Jinwook Will Chung and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency performance could be improved, the superior breakdown characteristics of nitride semiconductors would make these devices the best option for power amplifiers at any frequency. To achieve this goal, we have first identified some critical parameters that limit the high frequency performance of AlGaN/GaN HEMTs and then we have demonstrated several new technologies to increase the performance. Some of these technologies include advanced drain delay engineering, charge control in the channel and new N-face GaN HEMTs. Although more work is needed in the future to combine all these new technologies, the initial results are extremely promising.
Extreme Environment Electronics
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Extreme Environment Electronics written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Passive And Active Components Development For Broadband Applications
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Author :
language : en
Publisher:
Release Date : 2009
Passive And Active Components Development For Broadband Applications written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Recently, GaN HEMTs have been proven to have numerous physical properties, resulting in transistors with greatly increased power densities when compared to the other well-established FET technologies. This advancement spurred research and product development towards power-band applications that require both high power and high efficiency over the wide band. Even though the use of multiple narrow band PAs covering the whole band has invariably led to better performance in terms of efficiency and noise, there is an associated increase in cost and in the insertion loss of the switches used to toggle between the different operating bands. The goal, now, of the new technology is to replace the multiple narrow band PAs with one broadband PA that has a comparable efficiency performance. In our study here, we have investigated a variety of wide band power amplifiers, including class AB PAs and their implementation in distributed and feedback PAs. Additionally, our investigation has included switching-mode PAs as they are well-known for achieving a relatively high efficiency. Besides having a higher efficiency, they are also less susceptible to parameter variations and could impose a lower thermal stress on the transistors than the conventional-mode PAs. With GaN HEMTs, we have demonstrated: a higher than 37 dBm output power and a more than 30% drain efficiency over 0.02 to 3 GHz for the distributed power amplifier; a higher than 30 dBm output power with more than a 22% drain efficiency over 0.1 to 5 GHz for the feedback amplifier; and at least a 43 dBm output power with a higher than 63% drain efficiency over 0.05 to 0.55 GHz for the class D PA. In many communication applications, however, achieving both high efficiency and linearity in the PA design is required. Therefore, in our research, we have evaluated several linearization and efficiency enhancement techniques. We selected the LInear amplification with Nonlinear Components (LINC) approach. Highly efficient combiner and novel efficiency enhancement techniques like the power recycling combiner and adaptive bias LINC schemes have been successfully developed and verified to achieve a combined high efficiency with a relatively high linearity.
Iii Nitride Electronic Devices
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Author :
language : en
Publisher: Academic Press
Release Date : 2019-10-18
Iii Nitride Electronic Devices written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10-18 with Science categories.
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Microwave High Power High Efficiency Gan Amplifiers For Communication
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Author : Subhash Chandra Bera
language : en
Publisher: Springer
Release Date : 2023-12-01
Microwave High Power High Efficiency Gan Amplifiers For Communication written by Subhash Chandra Bera and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-01 with Technology & Engineering categories.
The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.