Monte Carlo Simulation Of Atomic Diffusion Gold Into Silicon
DOWNLOAD
Download Monte Carlo Simulation Of Atomic Diffusion Gold Into Silicon PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Monte Carlo Simulation Of Atomic Diffusion Gold Into Silicon book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Monte Carlo Simulation Of Atomic Diffusion Gold Into Silicon
DOWNLOAD
Author : Poovanaesvaran P.
language : en
Publisher:
Release Date : 2006
Monte Carlo Simulation Of Atomic Diffusion Gold Into Silicon written by Poovanaesvaran P. and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
Monte Carlo Simulation Of Atomic Diffusion
DOWNLOAD
Author : Poovanaesvaran Paramaesvaran
language : en
Publisher:
Release Date : 2004
Monte Carlo Simulation Of Atomic Diffusion written by Poovanaesvaran Paramaesvaran and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Diffusion categories.
Monte Carlo Simulation Of Atomic Diffusion In Si And Gaas Via Vacancies And Interstitials
DOWNLOAD
Author : Uwe Schmid
language : en
Publisher:
Release Date : 1988
Monte Carlo Simulation Of Atomic Diffusion In Si And Gaas Via Vacancies And Interstitials written by Uwe Schmid and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Diffusion categories.
A computer simulation program, which runs efficiently on micro-computers, for the diffusion of point defects in the diamond and zincblende structure was developed. The simulated point defects comprise vacancies, host or impurity interstitials on any of three types of interstitials sites, and impurities. Diffusion via vacancy first and second neighbor hopping, the Frank-Turnbull (vacancy-interstitial) and the kick-out (host-impurityinterstitial) mechanism are simulated. The program is entirely controlled by the user, who may simulate various diffusion models with different parameters, such as activation energies and bond energies. Thus, the evolution of an initial defect configuration as fed to the program - can be monitored in space and time, giving insight into the simulated model. The program was applied to the diffusion of Au into Si. It gave U-shaped profiles, similar to those observed, for both of the previously proposed models, a simple Frank-Turnbull and a simple kick-out hypothesis. These ignore any effects due to the charge states of the various species, variation of the Fermi level across the sample and throughout the process, and any effect due to electron-hole recombination enhancement of the process together with the variation of the minority carrier lifetime as a result of this process. Whereas the data of the simple Frank-Turnbull could be fitted to a complementary error function, the kick-out yielded an exponential profile close to the surface. Neither of the models could account for the right time dependence of the central gold concentration, which is known experimentally to be a square root law. It can be concluded that neither suggested model contains the physics required to explain the experimental data.
Monte Carlo Diffusion Studies
DOWNLOAD
Author : D.J. Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2015-02-13
Monte Carlo Diffusion Studies written by D.J. Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-02-13 with Technology & Engineering categories.
The Monte Carlo method, largely the brainchild of Stanislaw Ulam and first implemented by John von Neumann, depends upon the use of digital computers and is therefore very much a product of post-WW2 technological developments; even though one could argue that the Buffons Needle estimate was an ancestor of the technique. The probabilistic nature of the method makes it a good choice for modeling those physical phenomena which involve similarly random motions at the atomic scale; a particularly good example being that of mass diffusion. The present volume comprises a compilation of selected Monte Carlo studies of diffusion in borides, carbides, diamond, graphene, graphite, hydrides, ice, metals, oxides, semiconductors, sulfides, zeolites and other materials. General aspects of diffusion are also covered. The 516 entries cover the period from 1966 to 2014.
Monte Carlo Simulation Of Semiconductor Devices
DOWNLOAD
Author : C. Moglestue
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Monte Carlo Simulation Of Semiconductor Devices written by C. Moglestue and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Computers categories.
Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Monte Carlo Simulation Of Atom Diffusion Via Vacancies In Nanofilms
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2009
Monte Carlo Simulation Of Atom Diffusion Via Vacancies In Nanofilms written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Results Of The Monte Carlo Calculation Of One And Two Dimensional Distributions Of Particles And Damage
DOWNLOAD
Author : John Albers
language : en
Publisher:
Release Date : 1987
Results Of The Monte Carlo Calculation Of One And Two Dimensional Distributions Of Particles And Damage written by John Albers and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Ion implantation categories.
First Principles And Kinetic Monte Carlo Simulation Of Dopant Diffusion In Strained Si And Other Materials
DOWNLOAD
Author : Li Lin
language : en
Publisher:
Release Date : 2006
First Principles And Kinetic Monte Carlo Simulation Of Dopant Diffusion In Strained Si And Other Materials written by Li Lin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Monte Carlo method categories.
Monte Carlo Simulation Studies Of Diffusion Coefficients And Mobilities For Ionic Swarm Drifting In Atomic And Molecular Gases
DOWNLOAD
Author : Minmei Li
language : en
Publisher:
Release Date : 1996
Monte Carlo Simulation Studies Of Diffusion Coefficients And Mobilities For Ionic Swarm Drifting In Atomic And Molecular Gases written by Minmei Li and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Electron transport categories.
Positron Annihilation In Semiconductors
DOWNLOAD
Author : Reinhard Krause-Rehberg
language : en
Publisher: Springer Science & Business Media
Release Date : 1999
Positron Annihilation In Semiconductors written by Reinhard Krause-Rehberg and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Science categories.
This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.