Nanocharacterisation Of Iii Nitride Semiconductors
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Nanocharacterisation Of Iii Nitride Semiconductors
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Author : Douglas Cameron
language : en
Publisher:
Release Date : 2022
Nanocharacterisation Of Iii Nitride Semiconductors written by Douglas Cameron and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with categories.
Iii Nitride Semiconductors And Their Modern Devices
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Author : Bernard Gil
language : en
Publisher: Semiconductor Science and Tech
Release Date : 2013-08-22
Iii Nitride Semiconductors And Their Modern Devices written by Bernard Gil and has been published by Semiconductor Science and Tech this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-08-22 with Science categories.
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Iii V Nitride Semiconductors
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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2022-10-30
Iii V Nitride Semiconductors written by Edward T. Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-10-30 with Technology & Engineering categories.
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Dilute Iii V Nitride Semiconductors And Material Systems
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Author : Ayse Erol
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-01-12
Dilute Iii V Nitride Semiconductors And Material Systems written by Ayse Erol and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-01-12 with Technology & Engineering categories.
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Iii Nitride Materials Devices
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Author : Zhe Chuan Feng
language : en
Publisher: Wspc (Europe)
Release Date : 2017
Iii Nitride Materials Devices written by Zhe Chuan Feng and has been published by Wspc (Europe) this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Science categories.
This is Zhe Chuan Feng's third book on the topic of III-nitride materials, following the original III-Nitride Semiconductor Materials (2006) and the subsequent III-Nitride Devices and Nanoengineering (2008). The development of these materials and devices is moving so rapidly that constant updates and amendments are needed to reflect new research discoveries. This book covers recent innovation and achievements in the field, in particular those made since 2009.
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Author :
language : en
Publisher:
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written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
Iii Nitride
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Author : Zhe Chuan Feng
language : en
Publisher: Imperial College Press
Release Date : 2006
Iii Nitride written by Zhe Chuan Feng and has been published by Imperial College Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Technology & Engineering categories.
III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.
Nanometric Characterisation Of Iii Nitride Semiconductors
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Author : Lay-Theng Tan
language : en
Publisher:
Release Date : 2009
Nanometric Characterisation Of Iii Nitride Semiconductors written by Lay-Theng Tan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
An investigation on the optical, composition and surface properties of the III-nitride ternary alloys InxGa1-xN and Al1-xInxN is presented. The structures studied are single quantum wells (SQWs) and epilayers. The effects of various GaN cap thicknesses, well widths, Si doping concentrations in the barriers, InN compositions, epilayer thicknesses and substrates are examined. The techniques used are photoluminescence (PL) and PL excitation (PLE) spectroscopy for investigating the optical properties, wavelength dispersive x-ray (WDX) and Rutherford backscattering spectrometry (RBS) for measuring InN composition. RBS is also used to study the crystalline quality of the samples; and secondary electron microscopy (SEM) and atomic force microscopy (AFM) for examining the surface quality. InxGa1-xN/GaN SQWs with a variety of GaN cap thicknesses and different barrier doping levels were studied using PL spectroscopy. It was demonstrated that the InxGa1-xN/GaN SQWs with thin caps give reduced PL intensity and larger PL linewidths, indicating degradation due to the increasing effects of the surface. As the doping level in the GaN barrier layers increases the luminescence intensity decreases, the linewidth increases and the SQW transition energy red-shifts. The latter is attributed to band-gap renormalisation. The properties of GaN/A1-xInxN SQWs were investigated for varying quantum well width and for different substrates. The GaN/A1-xInxN SQW luminescence peak energy decreases as the well-width increases, mainly due to the intense spontaneous polarisation fields, and its dependence on excitation power reveals the effects of carrier screening. Al1-xInxN epilayers were also characterised and here the PL peak emission energies decrease with increasing InN composition. The energy bandgap bowing parameter is found to be linearly decreasing with increasing InN composition in the limited composition range studied. Cracks are observed in highly tensile strained epilayers with x
Dilute Iii V Nitride Semiconductors And Material Systems
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Author : Ayse Erol
language : en
Publisher: Springer
Release Date : 2009-09-02
Dilute Iii V Nitride Semiconductors And Material Systems written by Ayse Erol and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-09-02 with Technology & Engineering categories.
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Recent Advances In Iii Nitride Semiconductors
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Author : Peng Chen
language : en
Publisher: Mdpi AG
Release Date : 2023-08-22
Recent Advances In Iii Nitride Semiconductors written by Peng Chen and has been published by Mdpi AG this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-08-22 with Technology & Engineering categories.
Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on "Recent Advances in III-Nitride Semiconductors" provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures; GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics.
