Point Defects In Two Dimensional Layered Semiconductors
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Point Defects In Two Dimensional Layered Semiconductors
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Author : Joonki Suh
language : en
Publisher:
Release Date : 2015
Point Defects In Two Dimensional Layered Semiconductors written by Joonki Suh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in thermoelectric materials are thoroughly investigated. Point defects can potentially beat the undesired coupling, often term "thermoelectric Bermuda triangle", among electrical conductivity, thermal conductivity and thermopower. The maximum thermoelectric performance is demonstrated with an intermediate density of defects when they beneficially and multi-functionally act as electron donors, as well as strongly energy-dependent electron and phonon scatterers. Therefore, this is a good example of how fundamental defect physics can be applied for practical devices toward renewable energy technology. Another interesting field of layered nanomaterials is on transition-metal dichalcogenides (TMDs), sensational candidates for 2D semiconductor physics and applications. At the reduced dimensionality of 2D where a far stronger correlation between point defects and charge carriers is expected, it is studied how chalcogen vacancies alter optical properties of monolayer TMDs. A new, sub-bandgap broad emission lines as well as increase in the overall photoluminescence intensity at low temperatures are reported as a result of high quantum efficiency of excitons, i.e., bound electron-hole pairs, localized at defect sites. On electrical transport, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction while typically only one type of doping is stable for a particular TMD. For example, MoS2 is natively n-type, thus the lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2. To address this issue, we demonstrate stable p-type conduction in MoS2 by substitutional Nb doping up to the degenerate level. Proof-of-concept, van der Waals p-n homo-junctions based on vertically stacked MoS2 layers are also fabricated which enable gate-tuneable current rectification. Various electronic devices fabricated are stable in ambient air even without additional treatment such as capping layer protection, thanks to the substitutionality nature of the doping; this is in stark contrast to the existing approach of using molecular doping, which usually suffers from volatility and reactivity with air and/or water molecules.
Defects In Two Dimensional Materials
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Author : Rafik Addou
language : en
Publisher: Elsevier
Release Date : 2022-02-14
Defects In Two Dimensional Materials written by Rafik Addou and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-02-14 with Technology & Engineering categories.
Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials
Defects In Advanced Electronic Materials And Novel Low Dimensional Structures
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Author : Jan Stehr
language : en
Publisher: Woodhead Publishing
Release Date : 2018-06-29
Defects In Advanced Electronic Materials And Novel Low Dimensional Structures written by Jan Stehr and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-06-29 with Technology & Engineering categories.
Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers Addresses a range of defects in a variety of systems, providing a comparative approach Includes sections on advances in theory that provide insights on where this body of research might lead
Defect Behavior In Ceramics And Semiconductors
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Author : Jun Young Kim
language : en
Publisher:
Release Date : 2022
Defect Behavior In Ceramics And Semiconductors written by Jun Young Kim and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with categories.
I study defect behavior in transition metal borides (TMBs) and transition metal dichalcogenides (TMDs) by means of density functional theory. TMBs have been studied mainly for extreme environment applications, and TMDs, especially their two-dimensional (2D) forms, have been considered for promising materials in next-generation semiconductor applications. Here, I discuss defect properties that must be considered for the proper operation of applications of TMBs and TMDs.First, I study a new class of layered TMBs, called MAB phases, focusing on the stability of point defects and its impact on the defect recovery processes in two MAB phases: MoAlB and Fe2AlB2. Combined with experiments, I find that the defect recovery process in Fe2AlB2 is more efficient than in MoAlB, attributed to the stability of metal interstitials. Next, I investigate the structure-dependent defect recovery processes in Cr-based binary TMBs (CrB, Cr3B4, Cr2B3) and MAB phases (Cr2AlB2, Cr3AlB4, Cr4AlB6). I demonstrate that both the type of B networks and the Al layers have crucial impacts on the defect kinetics and the defect recovery processes. Lastly, I generalize the findings from the Mo-, Fe-, and Cr-based TMBs to TMBs with different transition metals and develop design rules for TMBs with efficient defect recovery processes. For TMDs, I combine state-of-the-art computational approaches with experiments to determine the formation energies and the charge-state transition levels (CTLs) of defects in bulk and 2D TMDs (MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2). I calculate the formation energies and the CTLs of native point defects in bulk TMDs, resulting in good agreement with our experimental CTLs measured by deep level transient spectroscopy (DLTS). The good agreement allows the identification of the nature of the CTLs observed in DLTS, while validating the computational approach. I apply the validated method to determine the CTLs in 2D TMDs, for which DLTS is very challenging. By comparing the CTLs in bulk and 2D TMDs, I find that the reduction of the dimensionality from bulk to 2D has a significant impact on the defect properties.
Nanostructured Photocatalyst Via Defect Engineering
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Author : Vitaly Gurylev
language : en
Publisher: Springer Nature
Release Date : 2021-10-28
Nanostructured Photocatalyst Via Defect Engineering written by Vitaly Gurylev and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-28 with Technology & Engineering categories.
This book helps readers comprehend the principles and fundamentals of defect engineering toward realization of an efficient photocatalyst. The volume consists of two parts, each of which addresses a particulate type of defects. The first, larger section provides a comprehensive and rigorous treatment of the behaviour and nature of intrinsic defects. The author describes how their controlled introduction and consequent manipulation over concentration, distribution, nature and diffusion is one of the most effective and practical methodologies to modify the properties and characteristics of target photocatalytic materials. The second part of the book explains the formation of extrinsic defects in the form of metallic and non-metallic dopants and gives a detailed description of their characteristics as this approach is also often used to fabricate an efficient photocatalyst. Filling the gap in knowledge on the correlation between introduction of defects in various semiconducting materials and their photocatalytic performance, the book is ideal for graduate students, academics and researchers interested in photocatalysts, defect engineering, clean energy, hydrogen production, nanoscale advanced functional materials, CO2 deactivation, and semiconductor engineering.
2d Materials
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Author : Phaedon Avouris
language : en
Publisher: Cambridge University Press
Release Date : 2017-06-29
2d Materials written by Phaedon Avouris and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-06-29 with Science categories.
A comprehensive and accessible introduction to 2D materials, covering basic physics, electronic and optical properties, and potential applications.
Point And Extended Defects In Semiconductors
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Author : Giorgio Benedek
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29
Point And Extended Defects In Semiconductors written by Giorgio Benedek and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Two Dimensional Electronics Prospects And Challenges
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Author : Frank Schwierz
language : en
Publisher: MDPI
Release Date : 2018-09-27
Two Dimensional Electronics Prospects And Challenges written by Frank Schwierz and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-27 with Electrical engineering. Electronics. Nuclear engineering categories.
This book is a printed edition of the Special Issue "Two-Dimensional Electronics - Prospects and Challenges" that was published in Electronics
Two Dimensional Semiconductors
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Author : Jingbo Li
language : en
Publisher: John Wiley & Sons
Release Date : 2020-04-13
Two Dimensional Semiconductors written by Jingbo Li and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-04-13 with Technology & Engineering categories.
In-depth overview of two-dimensional semiconductors from theoretical studies, properties to emerging applications! Two-dimensional (2D) materials have attracted enormous attention due to their exotic properties deriving from their ultrathin dimensions. 2D materials, such as graphene, transition metal dichalcogenides, transition metal oxides, black phosphorus and boron nitride, exhibit versatile optical, electronic, catalytic and mechanical properties, thus can be used in a wide range of applications, including electronics, optoelectronics and optical applications. Two-Dimensional Semiconductors: Synthesis, Physical Properties and Applications provides an in-depth view of 2D semiconductors from theoretical studies, properties to applications, taking into account the current state of research and development. It introduces various preparation methods and describes in detail the physical properties of 2D semiconductors including 2D alloys and heterostructures. The covered applications include, but are not limited to, field-effect transistors, spintronics, solar cells, photodetectors, light-emitting diode, sensors and bioelectronics. * Highly topical: 2D materials are a rapidly advancing field that attracts increasing attention * Concise overview: covers theoretical studies, preparation methods, physical properties, potential applications, the challenges and opportunities * Application oriented: focuses on 2D semiconductors that can be used in various applications such as field-effect transistors, solar cells, sensors and bioelectronics * Highly relevant: newcomers as well as experienced researchers in the field of 2D materials will benefit from this book Two-Dimensional Semiconductors: Synthesis, Physical Properties and Applications is written for materials scientists, semiconductor and solid state physicists, electrical engineers, and readers working in the semiconductor industry.
Gettering Defects In Semiconductors
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Author : Victor A. Perevostchikov
language : en
Publisher: Springer Science & Business Media
Release Date : 2005-12-12
Gettering Defects In Semiconductors written by Victor A. Perevostchikov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-12-12 with Technology & Engineering categories.
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.