Proton Radiation And Thermal Stabilty Sic Of Gallium Nitride And Gallium Nitride Devices
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Proton Radiation And Thermal Stabilty Sic Of Gallium Nitride And Gallium Nitride Devices
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Author : Kimberly K. Allums
language : en
Publisher:
Release Date : 2006
Proton Radiation And Thermal Stabilty Sic Of Gallium Nitride And Gallium Nitride Devices written by Kimberly K. Allums and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
ABSTRACT: In today's industry one can see a constant challenge to exceed the limits of yesterday's devices. For the last three decades, the III--V nitride semiconductors have been viewed as highly promising for semiconductor device applications. The primary focus of III--V nitrides, thus far, has been centered on light emitting diodes (LEDs), injection lasers for digital data reading and storage applications, and ultra violet photodetectors. Yet, another application is high-power electronic devices for space-borne communications systems. It is expected that GaN-based devices will be more resistant to radiation damage often encountered in space environments, though verification of this is just now being undertaken. In particular, no information is yet available about the sensitivity to radiation of devices using dielectrics such as MOSFETs. Similarly, very limited data has been reported on the effects of high-energy protons on GaN based devices of any type. For this reason the research presented in this dissertation was undertaken to study the radiation and thermal stability of gallium nitride materials and gallium nitride semiconductor diodes, with and without novel gate dielectrics such as, scandium oxide (Sc2O3) and magnesium oxide (MgO) and the ternary mix of magnesium calcium oxide (MgCaO). It was found that though environmental degradation could be a problem for MgO dielectrics, the radiation exposure itself did not produce significant damage in either the Sc2O3, MgO or MgCaO dielectrics. Much of the minimal damage occurred in the GaN as shown by photoluminescence spectroscopy (PL).
Cathodoluminescence Spectroscopy Studies Of Aluminum Gallium Nitride And Silicon Device Structures As A Function Of Irradiation And Processing
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Author : Brad Derek White
language : en
Publisher:
Release Date : 2006
Cathodoluminescence Spectroscopy Studies Of Aluminum Gallium Nitride And Silicon Device Structures As A Function Of Irradiation And Processing written by Brad Derek White and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Cathodoluminescence categories.
Abstract: Spatially-resolved cathodoluminescence spectroscopy (CLS) has been used to identify the presence of radiative point and extended defects in the semiconductor band gap produced by irradiation and processing conditions for Si and GaN-based devices. Changes in deep level emission in Al-SiO 2 -Si capacitor structures revealed a gradient in relative defect concentrations across the SiO 2 film after x-ray irradiation, indicating interface-specific defect creation. CLS measurements also revealed changes in the near-band edge signatures of AlGaN-GaN high-electron mobility transistor (HEMT) structures subjected to 1.8 MeV proton irradiation. These changes were indicative of alloying of AlGaN and GaN at the charge confinement interface and relaxation of piezoelectric strain in the AlGaN film. Alloying was confirmed with secondary-ion mass spectrometry, and each mechanism contributed to the measured degradation in HEMT channel transport properties. Ni-GaN Schottky barrier height decreases were also observed at lower fluences. 1.0 MeV protons were ~1.5 times more damaging than 1.8 MeV protons, which is consistent with simulations of total non-ionizing energy loss. Schottky contacts on x Al ~0.4 AlGaN were also investigated versus pre-deposition cleaning procedure. Two inductively-coupled plasma reactive-ion etching (ICP-RIE) procedures were compared with a standard HCl etch. The ICP-RIE treated samples exhibited higher uniformity than the HCl-etched surface, from electrical and CLS measurements. The presence of a spectral emission at in the HCl-etched piece correlated with the presence of a secondary Schottky barrier at ~1 eV. The emergence of a second spectral peak after ICP treatment also resulted in pinned barriers near 1 eV. A pre-metallization rapid-thermal annealing process after the ICP-RIE treatment resulted in the disappearance of both peaks, and correlated with the best diode electrical properties. The degree of Fermi level pinning from interface states, inferred from plots of extracted barrier height versus metal workfunction, was characterized for all processing conditions. Estimated interface state density was reduced by an order of magnitude for the rapid-thermal anneal process. Temperature-dependent CLS was used to assign physical origins to the defects that control the Schottky barrier properties. Nitrogen vacancies are the most probable assignment for one, or both, peaks, with the presence of screw dislocations suggested by the data.
Hemt Technology And Applications
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Author : Trupti Ranjan Lenka
language : en
Publisher: Springer Nature
Release Date : 2022-06-23
Hemt Technology And Applications written by Trupti Ranjan Lenka and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-23 with Technology & Engineering categories.
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Spectroscopic Characterization Of Radiation Induced Defects In Gallium Nitride
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Author : Qing Yang (Ph.D.)
language : en
Publisher:
Release Date : 2005
Spectroscopic Characterization Of Radiation Induced Defects In Gallium Nitride written by Qing Yang (Ph.D.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Evaluation Of Gan As A Radiation Detection Material
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Author : Jinghui Wang
language : en
Publisher:
Release Date : 2012
Evaluation Of Gan As A Radiation Detection Material written by Jinghui Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Abstract: The semiconductor material Gallium Nitride (GaN) has been widely applied in the fields of optoelectronic and high power devices, e.g., light emission diodes (LEDs) and high electron mobility transistors (HEMTs). Due to its remarkable properties, especially the wide band gap (3.39 eV), large dislocation density (N: 109 eV and Ga: 45 eV) and high thermal stability (Melting point: 2500 0C), GaN is now attracting considerable attention in application for nuclear radiation detections. Up until now, several promising results have been obtained for Alpha particle detection based on Schottky diode structure fabricated on thin-film epitaxial semi-insulating or undoped GaN. Some research has also been carried out for gamma and neutron detections by employing special material such as Gadolinium doped GaN and structures such as copular structure. However, the development of GaN radiation detector is still plagued by the material and fabrication problems; thus, a systematic study for the influence of different type GaN materials and detector structures on the performance of the device is of great significance. In this research, two types of structures, sandwich and mesa, are employed to fabricate Schottky diode detector based on three kinds of GaN materials: Compensated freestanding semi-insulating (SI) GaN, undoped (UD) freestanding GaN and Gadolinium doped super-lattice (SL) GaN. Current-Voltage (I-V) characteristic is used to evaluate the quality of these devices. The major findings in this research are: for SI material, Ohmic contact can be successfully produced by silicon implantation (dose: 1x1016 cm-3) and high temperature activation (1150 0C) processes. Schottky contact can be formed on GaN substrate purchased from Ammono Company; it cannot be formed on GaN purchased from Kyma due to surface decomposition. As a radiation detection material, SI GaN suffers low charge collection efficiency (CCE) due to the deep level trapping centers introduced by the compensated iron impurities. However, if the thickness of the wafer can be controlled within a limit value (i.e., smaller than the alpha particle projection range, for instance), there is still a possibility for partial collection of the radiation signals. For UD GaN, Si implantation is also needed to form good Ohmic contact. For making Schottky contact, surface degradation effect is a major concern that can be eliminated by following a chemical physical polishing process after high temperature activation. When used for radiation detection, UD GaN needs high bias voltage to obtain a large depletion depth, which at the same time results in a high leakage current. Thus, only high quality GaN grown by MOCVD with carrier concentration on the orders of or less than 1016 cm-3 can be used for radiation detection. For Gd doped super-lattice thin-film GaN grown on a foreign substrate, relatively good Schottky diode can be obtained by decreasing the size of the contact, due to which, however, both the energy deposition rate and signal counting rate are largely decreased. Thus, both the thickness of the material and the size of the device should be carefully controlled in this case. Based on the theoretical analysis of the I-V characteristic, a Surface Parallel Resistance Model (SPRM) is proposed that could successfully explain the origination of the leakage current for these devices. Finally, a new detector structure is proposed by taking into account all these considerations. This research provides some good insights into the making of radiation detectors based on GaN.
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2019-08-12
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-12 with Science categories.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Introduction To Nitride Semiconductor Blue Lasers And Light Emitting Diodes
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Author : Shuji Nakamura
language : en
Publisher: CRC Press
Release Date : 2000-03-09
Introduction To Nitride Semiconductor Blue Lasers And Light Emitting Diodes written by Shuji Nakamura and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-03-09 with Science categories.
The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.
Radecs
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Author :
language : en
Publisher:
Release Date : 2003
Radecs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Electronic apparatus and appliances categories.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1995
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.