Radiation Effects On Charge Coupled Devices And Other Mos Structures
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Radiation Effects On Charge Coupled Devices And Other Mos Structures
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Author : Joseph R. Srour
language : en
Publisher:
Release Date : 1978
Radiation Effects On Charge Coupled Devices And Other Mos Structures written by Joseph R. Srour and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with categories.
This report describes results of radiation effects studies on charge-coupled devices (CCDs) and other MOS structures. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with such devices with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. A study of neutron damage mechanisms in CCDs was performed with emphasis placed on investigation of dark current increases.
Ionizing Radiation Effects In Electronics
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Author : Marta Bagatin
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Ionizing Radiation Effects In Electronics written by Marta Bagatin and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Effects Of Radiation Damage On Scientific Charge Coupled Devices Microform
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Author : Timothy D. Hardy
language : en
Publisher: National Library of Canada = Bibliothèque nationale du Canada
Release Date : 1997
Effects Of Radiation Damage On Scientific Charge Coupled Devices Microform written by Timothy D. Hardy and has been published by National Library of Canada = Bibliothèque nationale du Canada this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Charge coupled devices categories.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1992
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Aeronautics categories.
Technical Abstract Bulletin
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Author :
language : en
Publisher:
Release Date :
Technical Abstract Bulletin written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on with Science categories.
Handbook Of Radiation Effects
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Author : Andrew Holmes-Siedle
language : en
Publisher: Oxford University Press, USA
Release Date : 1993
Handbook Of Radiation Effects written by Andrew Holmes-Siedle and has been published by Oxford University Press, USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Science categories.
Of requirements for steady-state radiation sources -- Cosmic ray upset simulation -- Heavy ions -- Fission fragments -- Laser light -- Dosimetry for radiation testing -- Test procedures for semiconductor devices -- Comparison of space with military requirements -- Radiation response specifications -- Product assurance techniques and special radiation assessment -- ESA/SCC and ECSS specifications (Europe) -- BS 9000 specifications and CECC (Europe) -- MIL specifications (USA) -- ASTM specifications (USA) -- Electronic Industries Association EIA (USA) -- Comparison of standards -- Engineering materials -- Time-dependent effects and post-irradiation effects -- Radiation-hardening of semiconductor parts -- Methodology of total-dose hardening -- Hardening of a process -- Material preparation and cleaning -- Oxide growth -- Oxide anneal -- Gate electrode -- Modified gate insulators -- Field oxide hardening -- Other processing steps -- Hardening for total dose by 'layout' -- Hardening against transient radiation -- Pulsed gamma rays -- Single-event upsets -- Commercial radiation-hard and radiation-tolerant technologies -- Deep submicron technology -- Silicon on insulator (SOI) -- Standard products -- 'Fabless' manufacturer -- Hardening of parts other than silicon -- Equipment hardening and hardness assurance -- Elementary rules of hardening -- Hardening measures at the systems level -- Robots, diagnostics and military vehicles in penetrating radiation -- Manipulators for nuclear plant -- Hardening of a robotic vehicle.
Energy Research Abstracts
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Author :
language : en
Publisher:
Release Date : 1985
Energy Research Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with Power resources categories.
Investigation Of The Basic Mechanisms Of Radiation Effects On Semiconductor Devices Used In Electro Optical Sensor Applications
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Author :
language : en
Publisher:
Release Date : 1979
Investigation Of The Basic Mechanisms Of Radiation Effects On Semiconductor Devices Used In Electro Optical Sensor Applications written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1979 with categories.
This report describes results of an investigation of radiation effects on semiconductor devices used in electro-optical sensor applications. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with such devices with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. A study of ionizing radiation effects on silicon MOS devices was performed at temperatures ranging from 4 to 77 degrees K. Charge buildup in the SiO2 layer was observed to be identical at 4 and 77 degrees K after a steady-state exposure to ionizing radiation, which indicates that electron trapping is not important at 4 degrees K. Results at both temperatures can be accounted for quite well in terms of hole trapping and hole transport. An investigation of the basic mechanisms of radiation effects on extrinsic silicon detector material was initiated. Carrier removal produced by neutron bombardment of such material was studied and it was found that the introduction rate of compensating defects depends strongly on the depth within the forbidden gap of the intentional dopant level. A detailed study of radiation effects on charge-coupled devices was performed, with emphasis placed on examining changes in dark current density produced by bombardment with neutrons and with ionizing radiation. The rate of increase in dark current density was found to be very similar for neutron-irradiated buried-channel CCDs obtained from two sources. Results of short-term annealing measurements on CCDs following pulsed neutron bombardment are also presented. A damage coefficient appropriate for describing the introduction of damage in silicon depletion regions was experimentally determined.
Ionizing Radiation Effects In Mos Oxides
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Author : Timothy R Oldham
language : en
Publisher: World Scientific
Release Date : 2000-01-25
Ionizing Radiation Effects In Mos Oxides written by Timothy R Oldham and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-01-25 with Science categories.
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Review Naval Research Laboratory Washington D C
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Author :
language : en
Publisher:
Release Date : 1974
Review Naval Research Laboratory Washington D C written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with Electronics categories.