Study Of Defects In Technologically Important Iii V Compound Semiconductors
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Study Of Defects In Technologically Important Iii V Compound Semiconductors
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Author : Sandeep Pagala
language : en
Publisher:
Release Date : 2005
Study Of Defects In Technologically Important Iii V Compound Semiconductors written by Sandeep Pagala and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Compound semiconductors categories.
Proceedings Of The Twenty Sixth State Of The Art Program On Compound Semiconductors Sotapocs Xxvi
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Author : D. N. Buckley
language : en
Publisher: The Electrochemical Society
Release Date : 1997
Proceedings Of The Twenty Sixth State Of The Art Program On Compound Semiconductors Sotapocs Xxvi written by D. N. Buckley and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Technology & Engineering categories.
Charged Semiconductor Defects
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Author : Edmund G. Seebauer
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-11-14
Charged Semiconductor Defects written by Edmund G. Seebauer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-14 with Science categories.
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Hydrogen Migration And Complex Formation In Technologically Important Iii V And Ii Vi Semiconductors And Their Alloys
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Author :
language : en
Publisher:
Release Date : 1995
Hydrogen Migration And Complex Formation In Technologically Important Iii V And Ii Vi Semiconductors And Their Alloys written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with categories.
Experimental and theoretical studies were conducted to identify basic mechanisms and provide quantitative information on the properties of hydrogen in selected (technologically-important) III-V and II-VI semiconductors and their alloys. Hydrogen interactions with dopants and deep level defects were investigated in GaAs, AlGaAs, InGaAs/AlGaAs quantum wells, GaP, GaN, and ZnSe. The diffusivity of H+ in GaAs was determined with a new capacitance transient technique, which provided the first direct quantitative determination of the diffusivity of hydrogen in any compound semiconductor. Vibrational mode spectroscopy identified the N-H complex in ZnSe:N and the Zn-H complex in GaP:Zn. Hydrogenation of Mg-doped GaN produced acceptor passivation. New local vibrational modes were detected in MBE-grown, Mg-doped GaN. Computational studies were conducted on native defects in Ga N with the conclusion that, contrary to a wide-spread assumption, the nitrogen vacancy cannot be the source of the high n-type conductivity generally found in as-grown undoped GaN. Electronic defects were characterized in n-type GaN by deep level transient spectroscopy (DLTS) and optical-DLTS. Finally, in epitaxial ZnSe the effects of hydrogenation during gas-source (e.g., H2Se) MBE were found to be significantly enhanced when N was used as the acceptor dopant and resulted in highly resistive films, while Cl-doped n-type films were largely unaffected by the presence of hydrogen during growth. jg.
Materials Research Society Symposium Proceedings Volume 184 Degradation Mechanisms In Iii V Compound Semiconductor Devices And Structures
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Author : V. Swaminathan
language : en
Publisher:
Release Date : 1991
Materials Research Society Symposium Proceedings Volume 184 Degradation Mechanisms In Iii V Compound Semiconductor Devices And Structures written by V. Swaminathan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
This volume presents results from a Materials Research Society symposium aimed at one of the most important, yet often overlooked, areas in modern III-V device technology, namely the cause and effects of device degradation. Invited papers were presented on reliability calculations and protocols, the effects of various defects on device performance and the stability of layered structures and metallization. This topic is still one in which individual companies are reluctant to share their hard-earned data on reliability and degradation mechanisms, since these constitute a commercial advantage in many cases. It is clearly an area to which too little attention has been paid to date at international forums and it is expected that this will delineate the critical features of device and material degradation. Of continuing interest are the effects of stress and recombination-enhancement on the degradation of electronic and photonic devices, the role of defects in enhancing diffusion of dopants and lattice constituents and the reliability of metals on III-V materials. All of these subjects were covered in individual sessions within the symposium.
Fundamentals Of Iii V Semiconductor Mosfets
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Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16
Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces
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Author : Carl Wilmsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces written by Carl Wilmsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Basic Properties Of Iii V Devices Understanding Mysterious Trapping Phenomena
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Author : Kompa, Günter
language : en
Publisher: kassel university press GmbH
Release Date : 2014
Basic Properties Of Iii V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with Compound semiconductors categories.
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Dopants And Defects In Semiconductors
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2012-02-23
Dopants And Defects In Semiconductors written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-02-23 with Science categories.
Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.
Impurities And Defects In Group Iv Elements And Iii V Compounds St Rstellen Und Defekte In Elementen Der Iv Gruppe Und Iii V Verbindungen
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Author : C.A.J. Ammerlaan
language : en
Publisher: Springer
Release Date : 1989-12-12
Impurities And Defects In Group Iv Elements And Iii V Compounds St Rstellen Und Defekte In Elementen Der Iv Gruppe Und Iii V Verbindungen written by C.A.J. Ammerlaan and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989-12-12 with Science categories.
Subvolume III/22b of the Landolt-Börnstein New Series presents a comprehensive data compilation on defects and impurities in the elemental semiconductors and in the III-V compounds. Data on semiconductor defects were already included in the extended data collection on semiconductors in volumes III/17a...i. Research on semiconductor defects and impurities, however, advanced so rapidly during recent years that a new subvolume on this important topic seemed desirable. The information given in subvolume III/22b ranges from trends on defect properties as predicted by theory and a survey of diagnostic techniques to extensive tables and graphical representations of defect properties. The editor and the authors have endeavoured to find a unified form and to critically select the important and reliable information from the wide range of published data. Discussions of ambiguous results or textbook style explanations are avoided.