Study Of Gate Related Reliability In Power P Gan Hemts
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Study Of Gate Related Reliability In Power P Gan Hemts
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Author :
language : en
Publisher:
Release Date : 2021
Study Of Gate Related Reliability In Power P Gan Hemts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Effects Of Gate Stress And Parasitic Package Inductance On The Reliability Of Gan Hemts
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Author : Cheikh Abdoulahi Tine
language : en
Publisher:
Release Date : 2017
Effects Of Gate Stress And Parasitic Package Inductance On The Reliability Of Gan Hemts written by Cheikh Abdoulahi Tine and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Gallium nitride categories.
Recent advances in the development of gallium nitride (GaN) high electron mobility transistor (HEMT) have shown promising results in the application of high frequency power conversion techniques. GaN transistors are emerging as a credible alternative to silicon (Si) devices in multiple power conversion applications. This is mainly because the characteristics of GaN offer higher electron mobility, electron velocity, and higher breakdown voltage compared to (Si) devices. In spite of the promising attributes offered by GaN devices, significant technological readiness level challenges remain, in order for the technology to be adopted pervasively into the market. These challenges relate to the reliability of the material both at the device-physics level, and at the circuit-implementation level. This thesis presents detailed studies on some of the circuit-level reliability phenomena affecting GaN technology. These studies will offer a better understanding of the limitations associated with GaN so that the technology's beneficial aspects can be leveraged. The first reliability investigation performed was related to a comparison of two 600 V GaN HEMTs based on the same die, however packaged in two different configurations. In order to characterize the performance of the GaN HEMT, a realistic behavioral simulation model was developed in this thesis. The model takes into consideration both the static and dynamic characteristics of the HEMT including drain current variations with respect to gate voltage and drain voltage, ON resistance, intrinsic capacitances, and reverse recovery current and charge. The model was also integrated with values for the per-terminal parasitic package inductances. These values were obtained through empirical measurement. The modeled transistor was then simulated in a converter to analyze the overall performance of the system. Experimental results verified the results obtained by the model. This study thus presents a framework to project and assess the effect of each parasitic inductance on the performance of next generation GaN devices. In the second reliability study, the effect of gate-stress on the performance of normally-off GaN HEMT devices in a boost converter was investigated. The converter's efficiency, output voltage stability, and gate current were evaluated in order to scrutinize the failure mechanisms of pGaN gated lateral GaN devices under high gate stress. It was observed that the transient overshoot of the gate voltage during turn-on becomes switching frequency-dependent once the device has suffered sufficient degradation, leading to a marked decline in converter performance. This observation has not been reported in the previous literature. This improved understanding may allow mitigation of degradation mechanisms in GaN at the fabrication, packaging, and circuit implementation level. The results of this thesis are beneficial in two ways. First it offers insights into the safe and reliable implementation of GaN devices at the circuits-level, thus obviating the need to trade device performance for device safety. Secondly, the gate-stressing investigation unveils degradation characteristics that are of critical importance to the design and fabrication of next generation GaN devices.
Study Of Performance And Reliability In Gan On Si Power Devices Impacts Of Oxygen Plasma In P Gan Hemts And Trench Processes In Schottky Barrier Diode
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Author :
language : en
Publisher:
Release Date : 2022
Study Of Performance And Reliability In Gan On Si Power Devices Impacts Of Oxygen Plasma In P Gan Hemts And Trench Processes In Schottky Barrier Diode written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with categories.
Springer Handbook Of Semiconductor Devices
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Author : Massimo Rudan
language : en
Publisher: Springer Nature
Release Date : 2022-11-10
Springer Handbook Of Semiconductor Devices written by Massimo Rudan and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-10 with Technology & Engineering categories.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion
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Author : Gaudenzio Meneghesso
language : en
Publisher: Springer
Release Date : 2018-05-12
Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion written by Gaudenzio Meneghesso and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-12 with Technology & Engineering categories.
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
Reliability And Radiation Effects In Compound Semiconductors
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Author : Allan H. Johnston
language : en
Publisher: World Scientific
Release Date : 2010
Reliability And Radiation Effects In Compound Semiconductors written by Allan H. Johnston and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Technology & Engineering categories.
This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficult to use, and have caused failures in operating spacecraft. Others are far more robust. Johnston admirably clarifies the reasons for these differences in this landmark book.
Nitride Semiconductor Technology
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Author : Fabrizio Roccaforte
language : en
Publisher: John Wiley & Sons
Release Date : 2020-07-17
Nitride Semiconductor Technology written by Fabrizio Roccaforte and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-07-17 with Technology & Engineering categories.
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2019-08-12
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-12 with Science categories.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: Efficient Power Publications
Release Date : 2012
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by Efficient Power Publications this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Science categories.