The Development Of An Indium Gallium Arsenide Junction Field Effect Transistor For Use In Optical Receivers

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The Development Of An Indium Gallium Arsenide Junction Field Effect Transistor For Use In Optical Receivers

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Author : D. Wake
language : en
Publisher:
Release Date : 1987

The Development Of An Indium Gallium Arsenide Junction Field Effect Transistor For Use In Optical Receivers written by D. Wake and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with categories.

Monolithically Integrated Ingaas Inp Photodiode Junction Field Effect Transistor Receivers For Fiber Optic Telecommunication

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Author : Markus Blaser
language : en
Publisher: Hartung & Gorre
Release Date : 1997-01-01

Monolithically Integrated Ingaas Inp Photodiode Junction Field Effect Transistor Receivers For Fiber Optic Telecommunication written by Markus Blaser and has been published by Hartung & Gorre this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-01-01 with Gallium-arsenide semiconductors categories.

Demand Bibliography

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Author :
language : en
Publisher:
Release Date : 1989

Demand Bibliography written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Gallium arsenide semiconductors categories.

Molecular Beam Epitaxial Growth And Characterization Of Aluminum Gallium Arsenide Indium Gallium Arsenide Single Quantum Well Modulation Doped Field Effect Transistor Structures

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Author : David Constantine Radulescu
language : en
Publisher:
Release Date : 1988

Molecular Beam Epitaxial Growth And Characterization Of Aluminum Gallium Arsenide Indium Gallium Arsenide Single Quantum Well Modulation Doped Field Effect Transistor Structures written by David Constantine Radulescu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Doped semiconductors categories.

16th European Conference On Optical Communication

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Author :
language : en
Publisher: IOS Press
Release Date : 1990

16th European Conference On Optical Communication written by and has been published by IOS Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990 with Technology & Engineering categories.

Scientific And Technical Aerospace Reports

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Author :
language : en
Publisher:
Release Date :

Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on with Aeronautics categories.

Subnanometer Analysis And Optimization Of Indium Aluminum Arsenide Indium Gallium Arsenide Modulation Doped Field Effect Transistors

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Author : Matthew Lee Seaford
language : en
Publisher:
Release Date : 1997

Subnanometer Analysis And Optimization Of Indium Aluminum Arsenide Indium Gallium Arsenide Modulation Doped Field Effect Transistors written by Matthew Lee Seaford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.

Masters Theses In The Pure And Applied Sciences

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Author : Wade Shafer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Masters Theses In The Pure And Applied Sciences written by Wade Shafer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 26 (thesis year 1981) a total of 11 ,048 theses titles from 24 Canadian and 21 8 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 26 reports theses submitted in 1981, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.

International Aerospace Abstracts

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Author :
language : en
Publisher:
Release Date : 1999

International Aerospace Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Aeronautics categories.

Gallium Arsenide Field Effect Transistors With Semi Insulated Gates

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Author : D. W. Shaw
language : en
Publisher:
Release Date : 1977

Gallium Arsenide Field Effect Transistors With Semi Insulated Gates written by D. W. Shaw and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1977 with categories.

This report summarizes the results of a program for development and evaluation of gallium arsenide field effect transistors with semi-insulated gates (SIGFETs). These devices are potentially applicable to a number of microwave systems, including active-element phased-array radars and ECM jammers. Included in the scope of the program was an analysis of Class A and Class B FET amplifiers; design, fabrication, and dc and rf characterization of SIGFETs; evaluation of procedures for formation of n(+) contact regions for FETs; and an objective comparison of the properties of SIGFETs with those of conventional GaAs FETs. Theoretical analyses of the dc and rf operating characteristics of Class A and Class B FET amplifiers showed that maximum efficiency is expected for Class B operation into a tuned load. This conclusion was supported by the experimental observation that maximum efficiency was obtained for GaAs FETs when the gate bias approaches the pinch-off voltage, i.e., approaching Class B operation. Procedures were developed for fabrication of SIGFETs using either epitaxial growth or ion bombardment to form the region of high resistivity or semi-insulating GaAs to be located beneath the gate contact metal. SIGFETs fabricated by this procedure were compared with conventional FETs (without semi-insulated gates) fabricated from the same starting material. The SIGFETs have higher gate reverse breakdown voltages, lower transconductances, and approx. 1 dB lower small signal gains.