The Igbt Device Physics Design And Applications Of The Insulated Gate Bipolar Transistor
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The Igbt Device
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Author : B. Jayant Baliga
language : en
Publisher: William Andrew
Release Date : 2015-03-06
The Igbt Device written by B. Jayant Baliga and has been published by William Andrew this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-03-06 with Technology & Engineering categories.
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
The Igbt Device Physics Design And Applications Of The Insulated Gate Bipolar Transistor
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Author :
language : en
Publisher:
Release Date :
The Igbt Device Physics Design And Applications Of The Insulated Gate Bipolar Transistor written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
Insulated Gate Bipolar Transistor Igbt Theory And Design
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Author : Vinod Kumar Khanna
language : en
Publisher: John Wiley & Sons
Release Date : 2004-04-05
Insulated Gate Bipolar Transistor Igbt Theory And Design written by Vinod Kumar Khanna and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-04-05 with Technology & Engineering categories.
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Wide Bandgap Semiconductor Power Devices
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Author : B. Jayant Baliga
language : en
Publisher: Woodhead Publishing
Release Date : 2018-10-17
Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-17 with Technology & Engineering categories.
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Modern Power Electronic Devices
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Author : Francesco Iannuzzo
language : en
Publisher:
Release Date : 2020
Modern Power Electronic Devices written by Francesco Iannuzzo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with categories.
The Design Of An Insulated Gate Bipolar Transistor Igbt For Use As An Ignition Coil Driver
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Author : Joseph A. Yedinak
language : en
Publisher:
Release Date : 1997
The Design Of An Insulated Gate Bipolar Transistor Igbt For Use As An Ignition Coil Driver written by Joseph A. Yedinak and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Bipolar transistors categories.
Soi Lubistors
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Author : Yasuhisa Omura
language : en
Publisher: John Wiley & Sons
Release Date : 2013-08-27
Soi Lubistors written by Yasuhisa Omura and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-08-27 with Technology & Engineering categories.
Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit. The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockley’s theory, offering readers an opportunity to study the physics of pn junction. Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver. Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector. The book also explores the photonic crystal physics and device applications of the Lubistor. Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors Written by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device First book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies Approaches the topic in a systematic manner, from physical theory, through to modelling, and finally circuit applications This is an advanced level book requiring knowledge of electrical and electronics engineering at graduate level. Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)/ Noise Characteristics and Modeling of Lubistor/Negative Conductance Properties in Extremely Thin SOI Lubistors/ Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors/ Gate-Controlled Bipolar Action in Ultra-thin Dynamic Threshold SOI MOSFET/Sub-Circuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications/A New Basic Element for Neural Logic Functions and Functionality in Circuit Applications/Possible Implementation of SOI Lubistors into Conventional Logic Circuits/Potentiality of Electro-Optic Modulator Based on SOI Waveguide/Principles of Parameter Extraction/Feasibility of Lubistor-Based Avalanche Photo Transistor
Modern Power Electronic Devices
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Author : Francesco Iannuzzo
language : en
Publisher: Energy Engineering
Release Date : 2020-10
Modern Power Electronic Devices written by Francesco Iannuzzo and has been published by Energy Engineering this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-10 with Technology & Engineering categories.
Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.
Modeling And Characterization Of The Insulated Gate Bipolar Transistor In The Near Threshold Region
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Author : Farah P. Vandrevala
language : en
Publisher:
Release Date : 2013
Modeling And Characterization Of The Insulated Gate Bipolar Transistor In The Near Threshold Region written by Farah P. Vandrevala and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.
Fundamentals Of Power Semiconductor Devices
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Author : B. Jayant Baliga
language : en
Publisher: Springer
Release Date : 2018-09-28
Fundamentals Of Power Semiconductor Devices written by B. Jayant Baliga and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-28 with Technology & Engineering categories.
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.