Theory Of Point Defects In Semiconductors

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Theory Of Point Defects In Semiconductors

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Author : Guan Seng Khoo
language : en
Publisher:
Release Date : 1987

Theory Of Point Defects In Semiconductors written by Guan Seng Khoo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Point defects categories.

Theory Of Defects In Solids

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Author : A. M. Stoneham
language : en
Publisher: Oxford University Press, USA
Release Date : 1975

Theory Of Defects In Solids written by A. M. Stoneham and has been published by Oxford University Press, USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 1975 with Color centers categories.

This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature

Theory Of Defects In Semiconductors

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Author : David A. Drabold
language : en
Publisher: Springer
Release Date : 2009-09-02

Theory Of Defects In Semiconductors written by David A. Drabold and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-09-02 with Technology & Engineering categories.

This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. The book discusses today's state-of-the-art, as well as tomorrow’s tools: the supercell-pseudopotential method, the GW formalism, Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments and more. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

Theories Of Defects In Solids

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Author : Marshall Stoneham
language : en
Publisher: Oxford University Press, USA
Release Date : 2001-02-01

Theories Of Defects In Solids written by Marshall Stoneham and has been published by Oxford University Press, USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-02-01 with categories.

This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physicalassumptions and approximations are emphasized. Theory of Defects in Solids begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation of observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature.This book is intended for research workers and graduate students interested in solid-state physics.

Point Defects In Semiconductors I

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Author : M. Lannoo
language : en
Publisher: Springer
Release Date : 1981-08-01

Point Defects In Semiconductors I written by M. Lannoo and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981-08-01 with Science categories.

From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

Theory Of Defects In Solids

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Author : Arthur Marshall Stoneham
language : en
Publisher:
Release Date : 2000

Theory Of Defects In Solids written by Arthur Marshall Stoneham and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.

Point Defects In Semiconductors I

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Author : M. Lannoo
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Point Defects In Semiconductors I written by M. Lannoo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

Application Of Generalized Effective Mass Theory To Some Point Defects In Semiconductors

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Author : Chong-Lung Wang
language : en
Publisher:
Release Date : 1984

Application Of Generalized Effective Mass Theory To Some Point Defects In Semiconductors written by Chong-Lung Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with Point defects categories.

Point Defects In Group Iv Semiconductors

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Author : S. Pizzini
language : en
Publisher: Materials Research Forum LLC
Release Date : 2017-04-05

Point Defects In Group Iv Semiconductors written by S. Pizzini and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-04-05 with Technology & Engineering categories.

A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.

Theory Of Defects In Semiconductors

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Author : David A. Drabold
language : en
Publisher: Springer Science & Business Media
Release Date : 2007

Theory Of Defects In Semiconductors written by David A. Drabold and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Science categories.

Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.