A Simulation Study Of Silicon Nanowire Field Effect Transistors Fets
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A Simulation Study Of Silicon Nanowire Field Effect Transistors Fets
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Author :
language : en
Publisher:
Release Date : 2007
A Simulation Study Of Silicon Nanowire Field Effect Transistors Fets written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Abstract Silicon planar MOSFETs are approaching their scaling limits. New device designs are being explored to replace the existing planar technology. Among the possible new device designs are Double Gate (DG) FETs, FinFETs, Tri-Gate FETs and Omega- Gate FETs. The Silicon Nanowire Gate All Around (GAA) FET stands out as one of the most promising FET designs due to its maximum gate effect in controlling the short channel effects. Recent developments such as synthesis of highly ordered nanowires and fabrication of nanowires as small as 1nm in diameter have illustrated the progress possible in silicon nanowire technology In this study we have explored the silicon nanowire FET as a possible candidate to replace the currently planar MOSFETs. In this thesis we investigated the silicon nanowire FET device and compared its performance with that of a double gate (DG) FET. The software used for the study assumed quantum-ballistic transport (NanoWire), which was developed at Purdue University. Initially, we presented a comparison of Nanowire FET with DG FET with for devices with same physical parameters. It was seen that superior subthreshold characteristics are exhibited by a silicon nanowire FET. We also conducted an optimization study for the 25 nm node from the ITRS report. The final device was optimized for both High Performance and Low Operating Power applications. A further study on future technology nodes down to the 14 nm node was performed which revealed short channel effects becomes significant at gate lengths ~ 5 nm even for a silicon nanowire device. Finally, a process variation study was conducted in comparison with a FinFET device. It was concluded that a silicon nanowire FET shows less sensitivity to process variation except it has higher sensitivity in variation with the diameter at less than ~4 nm than for FinFET where significant quantum effects set in. Variation with the gate length was found to be much less sensitive for the silicon nanowire FET because of its superior gate control characteristics.
A Simulation Study Of Enhancement Mode Indium Arsenide Nanowire Field Effect Transistor
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Author : Harish Narendar
language : en
Publisher:
Release Date : 2009
A Simulation Study Of Enhancement Mode Indium Arsenide Nanowire Field Effect Transistor written by Harish Narendar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
As device dimensions continue to shrink into the nanometer length regime, conventional complementary metal-oxide semiconductor (CMOS) technology will approach its fundamental physical limits. Further miniaturization based on conventional scaling appears neither technically nor economically feasible. New strategies, including the use of novel materials and one-dimensional device concepts, innovative device architectures, and smart integration schemes need to be explored. They are crucial to extending current capabilities and maintaining momentum beyond the end of the technology roadmap. Semiconducting nanowires are an attractive and viable option for channel structures. By virtue of their potential one-dimensionality, such nanoscale structures introduce quantum confinement effects, thus enabling new functionalities and device concepts. In this thesis we study performance limits of Indium Arsenide nanowire Field Effect Transistors (InAs NWFETs) in a Gate All Around (GAA) structure and examine its upper limits of performance. InAs in particular is an attractive candidate for NW-based electronic devices because of its very high electron mobility at room temperature of 30,000 cm2/Vs in comparison to silicon's mobility of 1480 cm2/Vs. The device simulations were carried out using MultiGate Nanowire (Nanowire MG) simulator made available at NanoHUB (www.nanohub.org) by Network for Computational Nanotechnology (NCN). The InAs NWFET was simulated for variations in channel diameter, channel length, oxide thickness and the corresponding Id -- Vg characteristics were analyzed. Short Channel Effects (SCEs) namely Drain Induced Barrier Lowering (DIBL) and threshold voltage roll off were studied. Sub-threshold slope and ON/OFF current variations were analyzed for variations in device dimensions. Finally the device characteristics of Silicon Nanowire Field Effect Transistors (Si NWFETs) were simulated for the same variations in channel diameter, channel length and oxide thickness and a comparative study of the device performance between InAs NWFET and Si NWFET was carried out to assess the effect of varying the channel material system. It was concluded that Silicon NWFET showed higher immunity towards threshold voltage roll off with scaling in channel length and exhibited better sub-threshold slopes for the same device structure in comparison to the InAs NWFET. Also it was observed that Silicon NWFET operated with lower leakage currents compared to InAs NWFET. Overall it was concluded that SiNWFET exhibited higher immunity towards short channel effects while InAs NWFET showed higher drive currents in the order of 0.10x10^(−3) A/ [mu] m compared to 8.4x10^(−6) A/ [mu] m which would translate to higher switching speeds.
Fabrication And Characterization Of High Performance Silicon Nanowire Field Effect Transistors
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Author : Muhammad Maksudur Rahman
language : en
Publisher:
Release Date : 2011
Fabrication And Characterization Of High Performance Silicon Nanowire Field Effect Transistors written by Muhammad Maksudur Rahman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Field-effect transistors categories.
Quasi one-dimensional (1-D) field-effect transistors (FET), such as Si nanowire FETs (Si NW-FETs), have shown promise for more aggressive channel length scaling, better electrostatic gate control, higher integration densities and low-power applications. At the same time, an accurate bench-marking of their performance remains a challenging task due to difficulties in definition of the exact channel length, gate capacitance and transconductance. In 1-D Si FETs, one also often observes a significant degradation of their mobility and on/off ratio. The goal of this study is to implement the idea of the FET performance enhancement while simultaneously performing a more rigorous data extraction. To achieve these goals, we fabricated dual-gate undoped Si NW-FETs with various NW diameters The Si NWs are grown by Au-catalyzed vapor-transport For our top-gate NW-FET, the subthreshold swing was determined to be 85-90 mV/decade, whereas the best subthreshold swings for Si NW-FETs until now were ~135-140 mV/decade. We achieved a ON/OFF current ratio of 10 7 due to improved electrostatic control and electron transport conditions inside the channel. This is on the higher end of any ON/OFF ratios thus far reported for NW FETs The hole mobility in our NW-FETs was around 250.400 cm[superscript 2] /Vs, according to different extraction procedures. In our mobility calculations we included the NW silicidation effect, which reduces the effective channel length. We calculated the top gate capacitance using Technology Computer Aided Design (TCAD) Sentaurus simulator, which gives more accurate value of capacitance of the NW over any analytical formulas. Thus we fabricate and rigorously study Si NW.s intrinsic properties which are very important for digital logic circuit application. In the second part of the study, we carried out simulation of Si NW FET devices to shed light on the carrier transport behavior that also explains experimental data.
Modeling Nanowire And Double Gate Junctionless Field Effect Transistors
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Author : Farzan Jazaeri
language : en
Publisher: Cambridge University Press
Release Date : 2018-03
Modeling Nanowire And Double Gate Junctionless Field Effect Transistors written by Farzan Jazaeri and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-03 with Science categories.
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Proceedings Of The 2nd International Conference On Electronic Engineering And Renewable Energy Systems
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Author : Bekkay Hajji
language : en
Publisher: Springer Nature
Release Date : 2020-08-14
Proceedings Of The 2nd International Conference On Electronic Engineering And Renewable Energy Systems written by Bekkay Hajji and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-08-14 with Technology & Engineering categories.
This book includes papers presented at the Second International Conference on Electronic Engineering and Renewable Energy (ICEERE 2020), which focus on the application of artificial intelligence techniques, emerging technology and the Internet of things in electrical and renewable energy systems, including hybrid systems, micro-grids, networking, smart health applications, smart grid, mechatronics and electric vehicles. It particularly focuses on new renewable energy technologies for agricultural and rural areas to promote the development of the Euro-Mediterranean region. Given its scope, the book is of interest to graduate students, researchers and practicing engineers working in the fields of electronic engineering and renewable energy.
Gaa Silicon Nanowire Field Effect Transistor A Compact Model
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Author : Mayank Chakraverty
language : en
Publisher:
Release Date : 2014-09-12
Gaa Silicon Nanowire Field Effect Transistor A Compact Model written by Mayank Chakraverty and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-12 with categories.
Junctionless Field Effect Transistors
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Author : Shubham Sahay
language : en
Publisher: John Wiley & Sons
Release Date : 2019-01-28
Junctionless Field Effect Transistors written by Shubham Sahay and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-28 with Technology & Engineering categories.
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Advanced Field Effect Transistors
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Author : Dharmendra Singh Yadav
language : en
Publisher: CRC Press
Release Date : 2023-12-22
Advanced Field Effect Transistors written by Dharmendra Singh Yadav and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-22 with Technology & Engineering categories.
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Tunnel Field Effect Transistors Tfet
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Author : Jagadesh Kumar Mamidala
language : en
Publisher: John Wiley & Sons
Release Date : 2016-09-27
Tunnel Field Effect Transistors Tfet written by Jagadesh Kumar Mamidala and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-27 with Technology & Engineering categories.
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Nanowire Field Effect Transistor Fet
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Author : Antonio García-Loureiro
language : en
Publisher:
Release Date : 2021
Nanowire Field Effect Transistor Fet written by Antonio García-Loureiro and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.