A Study Of Ingap Gaas Ingap Composite Collector Double Heterojunction Bipolar Transistor And Gaas Delta Doped Emitter Bipolar Junction Transistor
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A Study Of Ingap Gaas Ingap Composite Collector Double Heterojunction Bipolar Transistor And Gaas Delta Doped Emitter Bipolar Junction Transistor
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Author : Kim Luong Lew
language : en
Publisher:
Release Date : 2004
A Study Of Ingap Gaas Ingap Composite Collector Double Heterojunction Bipolar Transistor And Gaas Delta Doped Emitter Bipolar Junction Transistor written by Kim Luong Lew and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Ingap Ingaasn Gaas Npn Double Heterojunction Bipolar Transistor
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Author :
language : en
Publisher:
Release Date : 2000
Ingap Ingaasn Gaas Npn Double Heterojunction Bipolar Transistor written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with [delta]-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.
Characteristics Of Ingap Gaas Single Heterojunction Bipolar Transistor With Zero Potential Spike By Doped Sheet
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Author :
language : en
Publisher:
Release Date : 1906
Characteristics Of Ingap Gaas Single Heterojunction Bipolar Transistor With Zero Potential Spike By Doped Sheet written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1906 with categories.
We report the fabrication and characterization of the InGaP/GaAs single hetƯerojunction bipolar transistor (SHBT). The cross sectional structure of the studied device is shown in Fig.l. The SHBT with a delta-doped sheet located at the E-B heterointerface (delta-SHBT) exhibits a common-emitter current gain as high as 410 and an extremely low offset voltage of only 55 mV. Figure 2(a) and (b) illustrate the I-V characteristics and the expanded view near the near of the same device. The higher current gain of delta-SHBT can be attributed to the increase of the hole barrier resulting from the delta-doped sheet and to the reduction of charge storage because of the existence of thin spacer (50-A). The low offset voltage is due to the elimination of the potential spike of E-B junction. The calculated conduction band-edge diaƯgrams near the E-B junction of delta-SHBT, conventional SHBT and HEBT at various biased conditions are plotted in Fig. 3. At equilibrium, no potential spike exists for all the three structures. As Vbe= + 1.0 V forward biased, a potential spike about 60 meV existed in an SHBT while no potential spike existed in both delta-SHBT and HEBT. Also notice that the width of neutral region in narrow energy-gap emitter for an HEBT is also increased with biased voltage. It is evident that the potential spike do be eliminated by utilizing delta-doped sheet. On the other hand, calculated increase of the E-B capacitance for our delta-SHBT is very small due to the thin enough delta-doped sheet.
Fabrication And Modeling Of Ingap Gaas Heterojunction Bipolar Transistor
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Author : Sung-Jin Ho
language : en
Publisher:
Release Date : 2007
Fabrication And Modeling Of Ingap Gaas Heterojunction Bipolar Transistor written by Sung-Jin Ho and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation
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Author : Xiang Liu
language : en
Publisher:
Release Date : 2011
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation written by Xiang Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Bipolar transistors categories.
Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Semiconductor Research Trends
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Author : Kenneth G. Sachs
language : en
Publisher:
Release Date : 2007
Semiconductor Research Trends written by Kenneth G. Sachs and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Science categories.
This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2000
Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Science Abstracts
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Author :
language : en
Publisher:
Release Date : 1995
Science Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Electrical engineering categories.
Ingap Gaas Heterojunction Bipolar Transistors And Phototransistors
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Author : Jowan Masum
language : en
Publisher:
Release Date : 1997
Ingap Gaas Heterojunction Bipolar Transistors And Phototransistors written by Jowan Masum and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.