Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors
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Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2000
Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
The Aluminum Free P N P Ingaasn Double Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2001
The Aluminum Free P N P Ingaasn Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V[sub ON]) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D.C. characteristics with a current gain ([beta]) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f[sub T] and f[sub MAX] values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.
Ingap Ingaasn Gaas Npn Double Heterojunction Bipolar Transistor
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Author :
language : en
Publisher:
Release Date : 2000
Ingap Ingaasn Gaas Npn Double Heterojunction Bipolar Transistor written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with [delta]-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.
High Speed Compound Semiconductor Devices For Wireless Applications And State Of The Art Program On Compound Semiconductors Xxxiii
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Author : A. G. Baca
language : en
Publisher: The Electrochemical Society
Release Date : 2000
High Speed Compound Semiconductor Devices For Wireless Applications And State Of The Art Program On Compound Semiconductors Xxxiii written by A. G. Baca and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.
The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
Single And Double Heterojunction Bipolar Transistors In Collector Up Topology
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Author :
language : en
Publisher:
Release Date : 1910
Single And Double Heterojunction Bipolar Transistors In Collector Up Topology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1910 with categories.
For the first time, DC- and RF characteristics of single and double heterojunction bipolar transistors (S-HBT and D-HBT respectively) in collector-up topology are measured and compared. Both devices are realized in InGaP/GaAs technology and offer high common emitter breakdown voltage (BVceo> 16V) and high maximum oscillation frequency (fmax> 115GHz).
Dc Characteristics Of Omvpe Grown N P N Ingap Ingaasn Dhbts
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Author :
language : en
Publisher:
Release Date : 2000
Dc Characteristics Of Omvpe Grown N P N Ingap Ingaasn Dhbts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
State Of The Art Program On Compound Semiconductors Sotapocs Xxxv
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Author : P. C. Chang
language : en
Publisher: The Electrochemical Society
Release Date : 2001
State Of The Art Program On Compound Semiconductors Sotapocs Xxxv written by P. C. Chang and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Technology & Engineering categories.
Simulation And Design Of Ingaasn Based Heterojunction Bipolar Transistors For Complementary Low Power Applications
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Author :
language : en
Publisher:
Release Date : 2000
Simulation And Design Of Ingaasn Based Heterojunction Bipolar Transistors For Complementary Low Power Applications written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Current Trends In Heterojunction Bipolar Transistors
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Author : M F Chang
language : en
Publisher: World Scientific
Release Date : 1996-01-29
Current Trends In Heterojunction Bipolar Transistors written by M F Chang and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-29 with Technology & Engineering categories.
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Device Characteristics Of The Pnp Algaas
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Author :
language : en
Publisher:
Release Date : 2000
Device Characteristics Of The Pnp Algaas written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
The authors have demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub C} and a negligible {triangle}E{sub V}, and this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (Eg = 1.20 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs of comparable collector thickness and doping level.