Dc Characteristics Of Omvpe Grown N P N Ingap Ingaasn Dhbts
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Dc Characteristics Of Omvpe Grown N P N Ingap Ingaasn Dhbts
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Author :
language : en
Publisher:
Release Date : 2000
Dc Characteristics Of Omvpe Grown N P N Ingap Ingaasn Dhbts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
State Of The Art Program On Compound Semiconductors Sotapocs Xxxv
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Author : P. C. Chang
language : en
Publisher: The Electrochemical Society
Release Date : 2001
State Of The Art Program On Compound Semiconductors Sotapocs Xxxv written by P. C. Chang and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Technology & Engineering categories.
High Speed Compound Semiconductor Devices For Wireless Applications And State Of The Art Program On Compound Semiconductors Xxxiii
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Author : A. G. Baca
language : en
Publisher: The Electrochemical Society
Release Date : 2000
High Speed Compound Semiconductor Devices For Wireless Applications And State Of The Art Program On Compound Semiconductors Xxxiii written by A. G. Baca and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.
The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
Gaas Based Epitaxial Structures For Heterojunction Bipolar Transistors With Increased Efficiency
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Author : Rebecca Jane Welty
language : en
Publisher:
Release Date : 2002
Gaas Based Epitaxial Structures For Heterojunction Bipolar Transistors With Increased Efficiency written by Rebecca Jane Welty and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
2003 Ieee Conference On Electron Devices And Solid State Circuits
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Author :
language : en
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
Release Date : 2003
2003 Ieee Conference On Electron Devices And Solid State Circuits written by and has been published by Institute of Electrical & Electronics Engineers(IEEE) this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Electronic apparatus and appliances categories.
The proceedings from the 2003 IEEE Conference on Electron Devices and Solid-State Circuits.
Tunable Laser Diodes
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Author : Markus-Christian Amann
language : en
Publisher: Artech House Optoelectronics L
Release Date : 1998
Tunable Laser Diodes written by Markus-Christian Amann and has been published by Artech House Optoelectronics L this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Technology & Engineering categories.
This comprehensive reference discusses the underlying physics, operational principles, and performance and applications of tunable laser diodes. The book is supplemented with practical examples and helpful notations.
Handbook Of Crystal Growth
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Author : Peter Rudolph
language : en
Publisher: Elsevier
Release Date : 2014-11-04
Handbook Of Crystal Growth written by Peter Rudolph and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-04 with Science categories.
Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries
Dilute Nitride Semiconductors
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Author : Mohamed Henini
language : en
Publisher: Elsevier
Release Date : 2004-12-15
Dilute Nitride Semiconductors written by Mohamed Henini and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-12-15 with Technology & Engineering categories.
This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.