Analysis And Simulation Of Heterostructure Devices
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Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.
Gallium Nitride Electronics
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Author : Rüdiger Quay
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-05
Gallium Nitride Electronics written by Rüdiger Quay and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-05 with Technology & Engineering categories.
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Applications Of Silicon Germanium Heterostructure Devices
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Author : C.K Maiti
language : en
Publisher: CRC Press
Release Date : 2001-07-20
Applications Of Silicon Germanium Heterostructure Devices written by C.K Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-07-20 with Science categories.
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Silicon Germanium Heterojunction Bipolar Transistors For Mm Wave Systems Technology Modeling And Circuit Applications
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Author : Niccolò Rinaldi
language : en
Publisher: CRC Press
Release Date : 2022-09-01
Silicon Germanium Heterojunction Bipolar Transistors For Mm Wave Systems Technology Modeling And Circuit Applications written by Niccolò Rinaldi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-09-01 with Science categories.
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Simulation Of Semiconductor Processes And Devices 2007
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Author : Tibor Grasser
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-11-18
Simulation Of Semiconductor Processes And Devices 2007 written by Tibor Grasser and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-11-18 with Technology & Engineering categories.
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Physics And Technology Of Heterojunction Devices
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Author : Institution of Electrical Engineers
language : en
Publisher: IET
Release Date : 1991
Physics And Technology Of Heterojunction Devices written by Institution of Electrical Engineers and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Science categories.
This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Technology Computer Aided Design For Si Sige And Gaas Integrated Circuits
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Author : G.A. Armstrong
language : en
Publisher: IET
Release Date : 2007-11-30
Technology Computer Aided Design For Si Sige And Gaas Integrated Circuits written by G.A. Armstrong and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-11-30 with Computers categories.
The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.
Electrically Driven Quantum Dot Based Single Photon Sources
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Author : Markus Kantner
language : en
Publisher: Springer Nature
Release Date : 2020-01-25
Electrically Driven Quantum Dot Based Single Photon Sources written by Markus Kantner and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-01-25 with Science categories.
Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.
Intrinsic Point Defects Impurities And Their Diffusion In Silicon
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Author : Peter Pichler
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Intrinsic Point Defects Impurities And Their Diffusion In Silicon written by Peter Pichler and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.
Simulation Of Semiconductor Processes And Devices 1998
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Author : Kristin De Meyer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Simulation Of Semiconductor Processes And Devices 1998 written by Kristin De Meyer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)