Gallium Nitride Electronics
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Gallium Nitride Electronics
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Author : Rüdiger Quay
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-05
Gallium Nitride Electronics written by Rüdiger Quay and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-05 with Technology & Engineering categories.
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Gallium Nitride And Silicon Carbide Power Devices
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Author : B Jayant Baliga
language : en
Publisher: World Scientific Publishing Company
Release Date : 2016-12-12
Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-12-12 with categories.
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy
Gallium Nitride Processing For Electronics Sensors And Spintronics
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Author : Stephen J. Pearton
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-02-24
Gallium Nitride Processing For Electronics Sensors And Spintronics written by Stephen J. Pearton and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-02-24 with Technology & Engineering categories.
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Aspencore Guide To Gallium Nitride
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Author : Maurizio Di Paolo Emilio
language : en
Publisher:
Release Date : 2021-01-20
Aspencore Guide To Gallium Nitride written by Maurizio Di Paolo Emilio and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-20 with categories.
As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide clear benefits in power converters for consumer and industrial electronics. In over 150 pages covering the technology, its applications, markets and future potential, this book delves into GaN technology and its importance for power electronics professionals engaged with its implementation in power devices. The properties of GaN, such as low leakage current, significantly reduced power losses, higher power density and the ability to tolerate higher operating temperatures, all from a device smaller than its silicon-only equivalent, provide design advantages allowing previously unimaginable application performance. As an alternative to silicon, GaN can provide clear benefits in power converters for consumer and industrial electronics; chargers for wireless devices, including 5G; driver circuits for motor control; and power switches in automotive and space applications.The book also explores why GaN-based devices hold the key to addressing the energy efficiency agenda, a key strategic initiative in increasingly power-reliant industries such as data centers, electric vehicles, and renewable energy systems. Highly efficient residential and commercial energy storage systems using GaN technology will enable distribution, local storage, and on-demand access to renewable energy. Continued progress in the battery market will lead to declining battery costs and the development of smaller batteries that pair with GaN technology-based converters and inverters. Thermal management is critical in power electronics, and high efficiency in higher-power systems is always a focus. With GaN, a 50% reduction in losses can be achieved, reducing the costs and area required to manage heat. The book delves into GaN's electrical characteristics and how these can be exploited in power devices. There are also chapters that cross into the key applications for GaN devices for several markets such as space, automotive, audio, motor control and data centers. Each chapter provides a comprehensive overview of the subject matter for anyone who wants to stay on the leading edge of power electronics.
Thermal Management Of Gallium Nitride Electronics
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Author : Marko Tadjer
language : en
Publisher: Woodhead Publishing
Release Date : 2022-07-13
Thermal Management Of Gallium Nitride Electronics written by Marko Tadjer and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-07-13 with Technology & Engineering categories.
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics
Gallium Nitride Electronics
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Author :
language : en
Publisher:
Release Date : 2013
Gallium Nitride Electronics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Gan Based Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Special Issue On Gallium Nitride Electronics
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Author : Siddharth Rajan
language : en
Publisher:
Release Date : 2013
Special Issue On Gallium Nitride Electronics written by Siddharth Rajan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Gallium nitride categories.
Radiation Tolerant Gallium Nitride Electronics
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Author : Adithya Balaji
language : en
Publisher:
Release Date : 2022
Radiation Tolerant Gallium Nitride Electronics written by Adithya Balaji and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with Electrical engineering categories.
Gallium Nitride (GaN) devices are gaining widespread adoption in high performance power and RF applications. Recently, GaN has gained a lot of attention for its high tolerance to extreme environments. Due to its high displacement energy and bond strength, GaN has high intrinsic radiation tolerance. This work presents a radiation tolerant GaN monolithic technology to integrate digital circuits using AlGaN/GaN depletion mode and Gate Injection Transistor (GIT) based enhancement mode HEMTs. Using depletion load logic, logic inverters and universal gates were implemented and fabricated. The type of radiation damage on GaN is dependent on the type of radiation and dose. This digital logic technology proved feasible in low dose gamma radiation environments with no significant degradation in electrical performance. AlGaN/GaN HEMTs have shown high degradation after suffering displacement damage. This work proposes highly scaled FinFET structures to architect these devices to be less susceptible to radiation induced buffer damage. TCAD simulations of fin structures showed little shift in 2DEG concentration compared to similar planar structures. An E-Beam lithography process was also developed to fabricate AlGaN/GaN FinFETs.