Simulation Of Semiconductor Processes And Devices 2007
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Simulation Of Semiconductor Processes And Devices 2007
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Author : Tibor Grasser
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-09-18
Simulation Of Semiconductor Processes And Devices 2007 written by Tibor Grasser and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-09-18 with Computers categories.
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
3d Tcad Simulation For Semiconductor Processes Devices And Optoelectronics
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Author : Simon Li
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-10-01
3d Tcad Simulation For Semiconductor Processes Devices And Optoelectronics written by Simon Li and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-01 with Technology & Engineering categories.
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Simulation Of Semiconductor Processes And Devices 1998
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Author : Kristin De Meyer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Simulation Of Semiconductor Processes And Devices 1998 written by Kristin De Meyer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
International Conference On Simulation Of Semiconductor Processes And Devices
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Author :
language : en
Publisher:
Release Date : 2005
International Conference On Simulation Of Semiconductor Processes And Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Semiconductors categories.
Recent Topics On Modeling Of Semiconductor Processes Devices And Circuits
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Author : Rasit Onur Topaloglu
language : en
Publisher: Bentham Science Publishers
Release Date : 2011-09-09
Recent Topics On Modeling Of Semiconductor Processes Devices And Circuits written by Rasit Onur Topaloglu and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-09-09 with Technology & Engineering categories.
"The last couple of years have been very busy for the semiconductor industry and researchers. The rapid speed of production channel length reduction has brought lithographic challenges to semiconductor modeling. These include stress optimization, transisto"
Fundamentals Of Iii V Semiconductor Mosfets
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Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16
Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Computational Electrodynamics
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Author : Wim Schoenmaker
language : en
Publisher: CRC Press
Release Date : 2022-09-01
Computational Electrodynamics written by Wim Schoenmaker and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-09-01 with Science categories.
Computational Electrodynamics is a vast research field with a wide variety of tools. In physics the principle of gauge invariance plays a pivotal role as a guide towards a sensible formulation of the laws of nature as well as computing the properties of elementary particles using the lattice formulation of gauge theories, yet the gauge principle has played a much less pronounced role in performing computation in classical electrodynamics. In this work the author will demonstrate that starting from the gauge formulation of electrodynamics using the electromagnetic potentials leads to computational tools that can very well compete with the conventional electromagnetic field-based tools. Once accepting the formulation based on gauge fields, the computational code is very transparent due to the mimetic mapping of the electrodynamic variables on the computational grid. Although the illustrations and applications originate from microelectronic engineering, the method has a much larger range of applicability. Therefore this book is of interest to everyone having interest in computational electrodynamics. The volume is organized as follows: In part 1, a detailed introduction and overview is presented of the Maxwell equations as well as the derivation of the current and charge densities is different materials. Semiconductors are responding to electromagnetic fields in a non-linear way and the induced complications are discussed in detail. In part 2, the transition of the theory of electrodynamics, using the gauge potentials, to a formulation that can serve as the gateway to computational code is presented. In part 3, the feasibility and success of the methods of part 2 are demonstrated by a collection of microelectronic device designs. Part 4 focuses on a set of topical themes that brings the reader to the frontier of research in building the simulation tools using the gauge principle in computational electrodynamics. Technical topics discussed in the book include:Electromagnetic Field EquationsConstitutive RelationsDiscretization and Numerical AnalysisFinite Element and Finite Volume MethodsDesign of Integrated Passive Components
Beyond Si Based Cmos Devices
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Author : Sangeeta Singh
language : en
Publisher: Springer Nature
Release Date : 2024-09-02
Beyond Si Based Cmos Devices written by Sangeeta Singh and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-09-02 with Technology & Engineering categories.
This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices.
Cmos And Beyond
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Author : Tsu-Jae King Liu
language : en
Publisher: Cambridge University Press
Release Date : 2015-02-05
Cmos And Beyond written by Tsu-Jae King Liu and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-02-05 with Computers categories.
Get up to speed with the future of logic switch design with this indispensable introduction to post-CMOS technologies.
The Wigner Monte Carlo Method For Nanoelectronic Devices
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Author : Damien Querlioz
language : en
Publisher: John Wiley & Sons
Release Date : 2013-03-01
The Wigner Monte Carlo Method For Nanoelectronic Devices written by Damien Querlioz and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-01 with Technology & Engineering categories.
The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.