Intrinsic Point Defects Impurities And Their Diffusion In Silicon

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Intrinsic Point Defects Impurities And Their Diffusion In Silicon
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Author : Peter Pichler
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Intrinsic Point Defects Impurities And Their Diffusion In Silicon written by Peter Pichler and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.
Simulation Of Semiconductor Processes And Devices 2007
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Author : Tibor Grasser
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-11-18
Simulation Of Semiconductor Processes And Devices 2007 written by Tibor Grasser and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-11-18 with Technology & Engineering categories.
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Point Defects In Group Iv Semiconductors
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Author : S. Pizzini
language : en
Publisher: Materials Research Forum LLC
Release Date : 2017-04-05
Point Defects In Group Iv Semiconductors written by S. Pizzini and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-04-05 with Technology & Engineering categories.
A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.
Defects And Impurities In Silicon Materials
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Author : Yutaka Yoshida
language : en
Publisher: Springer
Release Date : 2016-03-30
Defects And Impurities In Silicon Materials written by Yutaka Yoshida and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Technology & Engineering categories.
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Physical Chemistry Of Semiconductor Materials And Processes
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Author :
language : en
Publisher: John Wiley & Sons
Release Date : 2015-08-17
Physical Chemistry Of Semiconductor Materials And Processes written by and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-17 with Science categories.
The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
The Physics Of Semiconductors
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Author : Marius Grundmann
language : en
Publisher: Springer
Release Date : 2015-12-24
The Physics Of Semiconductors written by Marius Grundmann and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-12-24 with Technology & Engineering categories.
The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better understanding of the topics. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from a highly regarded two-semester course. In the third edition several topics are extended and treated in more depth including surfaces, disordered materials, amorphous semiconductors, polarons, thermopower and noise. More than 1800 references guide the reader to historic and current literature including original and review papers and books.
Silicon Germanium And Their Alloys
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Author : Gudrun Kissinger
language : en
Publisher: CRC Press
Release Date : 2014-12-09
Silicon Germanium And Their Alloys written by Gudrun Kissinger and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-09 with Science categories.
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 2015-06-08
Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-08 with Technology & Engineering categories.
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Chemistry Of Semiconductors
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Author : Sergio Pizzini
language : en
Publisher: Royal Society of Chemistry
Release Date : 2023-11-24
Chemistry Of Semiconductors written by Sergio Pizzini and has been published by Royal Society of Chemistry this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-24 with Technology & Engineering categories.
Silicon, germanium, and compound semiconductors, among which silicon carbide, gallium arsenide and gallium nitride are the most representative examples, play a withstanding role in the world economy, since they were and still are the keys for the advancement of modern microelectronics and optoelectronics, with a wealth of sister technologies relevant for renewable energy solutions and advanced spectroscopy applications. This textbook will cover the synthesis, spectroscopic characterisation and optimisation of semiconductor materials, accounting for the most recent developments in the field of nanomaterials. It will be of great interest for scholars and instructors to have the chance to look at semiconductor science with a basic chemical approach. Homopolar semiconductors (silicon and germanium) are examined first, considering the role of these materials in modern microelectronics and in photovoltaics. Compound semiconductors (for example, carbides, arsenides, tellurides, nitrides) are also discussed in detail, considering that the chemistry of their preparation is even more critical and their role in photonic applications is strategic. Authored by a leading expert in the field, this easily accessible text is appropriate for advanced undergraduates and postgraduates studying materials science and technology.
Advanced Silicon Materials For Photovoltaic Applications
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Author : Sergio Pizzini
language : en
Publisher: John Wiley & Sons
Release Date : 2012-06-07
Advanced Silicon Materials For Photovoltaic Applications written by Sergio Pizzini and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-06-07 with Technology & Engineering categories.
Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Even though reports suggest that the silicon share will slowly decrease in the next twenty years, finding a way to manufacture a specific solar grade feedstock in large quantities, at a low cost while maintaining the quality needed, still remains a crucial issue. Thin film and quantum confinement-based silicon cells might be a complementary solution. Advanced Silicon Materials for Photovoltaic Applications has been designed to describe the full potentialities of silicon as a multipurpose material and covers: Physical, chemical and structural properties of silicon Production routes including the promise of low cost feedstock for PV applications Defect engineering and the role of impurities and defects Characterization techniques, and advanced analytical techniques for metallic and non-metallic impurities Thin film silicon and thin film solar cells Innovative quantum effects, and 3rd generation solar cells With contributions from internationally recognized authorities, this book gives a comprehensive analysis of the state-of-the-art of process technologies and material properties, essential for anyone interested in the application and development of photovoltaics.