Defects In Semiconductors


Defects In Semiconductors
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Defects In Semiconductors


Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 2015-06-08

Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-08 with Technology & Engineering categories.


This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors



Photo Induced Defects In Semiconductors


Photo Induced Defects In Semiconductors
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Author : David Redfield
language : en
Publisher: Cambridge University Press
Release Date : 1996-01-26

Photo Induced Defects In Semiconductors written by David Redfield and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-26 with Science categories.


A thorough review of the properties of deep-level, localized defects in semiconductors.



Extended Defects In Semiconductors


Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2014-08-07

Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-08-07 with Science categories.


Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.



Point And Extended Defects In Semiconductors


Point And Extended Defects In Semiconductors
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Author : Giorgio Benedek
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29

Point And Extended Defects In Semiconductors written by Giorgio Benedek and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.


The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.



Dopants And Defects In Semiconductors


Dopants And Defects In Semiconductors
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2012-02-23

Dopants And Defects In Semiconductors written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-02-23 with Science categories.


Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif



Extended Defects In Semiconductors


Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12

Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.


A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.



Charged Semiconductor Defects


Charged Semiconductor Defects
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Author : Edmund G. Seebauer
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-11-14

Charged Semiconductor Defects written by Edmund G. Seebauer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-14 with Science categories.


Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.



Dopants And Defects In Semiconductors Second Edition


Dopants And Defects In Semiconductors Second Edition
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2018-02-19

Dopants And Defects In Semiconductors Second Edition written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-02-19 with Science categories.


Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.



Theory Of Defects In Semiconductors


Theory Of Defects In Semiconductors
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Author : David A. Drabold
language : en
Publisher: Springer Science & Business Media
Release Date : 2007

Theory Of Defects In Semiconductors written by David A. Drabold and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Science categories.


Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.



Identification Of Defects In Semiconductors


Identification Of Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-27

Identification Of Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-27 with Science categories.


GENERAL DESCRIPTION OF THE SERIES Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUME This volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.