Dopants And Defects In Semiconductors Second Edition
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Dopants And Defects In Semiconductors
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2018-02-19
Dopants And Defects In Semiconductors written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-02-19 with Science categories.
Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ―Materials Today "... well written, with clear, lucid explanations ..." ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Dopants And Defects In Semiconductors Second Edition
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2018-02-19
Dopants And Defects In Semiconductors Second Edition written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-02-19 with Science categories.
Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Dopants And Defects In Semiconductors
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2012-02-23
Dopants And Defects In Semiconductors written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-02-23 with Science categories.
Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif
Doping In Iii V Semiconductors
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Author : E. Fred Schubert
language : en
Publisher: E. Fred Schubert
Release Date : 2015-08-18
Doping In Iii V Semiconductors written by E. Fred Schubert and has been published by E. Fred Schubert this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-18 with Science categories.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Defects In Nanocrystals
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Author : Sergio Pizzini
language : en
Publisher: CRC Press
Release Date : 2020-05-11
Defects In Nanocrystals written by Sergio Pizzini and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-05-11 with Technology & Engineering categories.
Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.
Kinetic Processes
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Author : Kenneth A. Jackson
language : en
Publisher: John Wiley & Sons
Release Date : 2006-03-06
Kinetic Processes written by Kenneth A. Jackson and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-03-06 with Technology & Engineering categories.
The formation of solids is governed by kinetic processes, which are closely related to the macroscopic behaviour of the resulting materials. With the main focus on ease of understanding, the author begins with the basic processes at the atomic level to illustrate their connections to material properties. Diffusion processes during crystal growth and phase transformations are examined in detail. Since the underlying mathematics are very complex, approximation methods typically used in practice are the prime choice of approach. Apart from metals and alloys, the book places special emphasis on the growth of thin films and bulk crystals, which are the two main pillars of modern device and semiconductor technology. All the presented phenomena are tied back to the basic thermodynamic properties of the materials and to the underlying physical processes for clarity.
Exotic Nuclei And Atomic Masses
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Author : Juha Äystö
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Exotic Nuclei And Atomic Masses written by Juha Äystö and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
The ENAM2001 Conference was held on July 2-7, 2001 at the Rantasipi Aulanko Hotel in Hameenlinna in southern Finland. The conference was organized by the Department of Physics and the Accelerator Laboratory of the University of Jyvaskyla with support from the Physics Departments of the Universities of Helsinki and Turku. This conference, Exotic Nuclei and Atomic Masses has now gained the status of a major nuclear physics serial conference. The previous conference was held in Bellaire, Michigan, USA. The conference was first held in 1967 in Lysekil, Sweden, then entitled Conference on Nuclei Far from Stability. ENAM2001 welcomed 270 participants from 34 countries, including 17 accompanying per sons. The content of the program was selected based on the advice of the International Advisory Committee. The Committee members read and considered 253 submitted abstracts in selecting oral contributions. During the conference week 76 invited and oral talks were given. The rest of the contributions were presented in dedicated poster sessions. Many thanks go to the speakers of oral and poster presentations for their enthusiasm and for the high quality of their work which demonstrated the liveliness of the field. Participation in the lectures was high and contributions from the audience were important towards the success of this conference. The organizers would like to especially thank Cary Davids of Argonne National Laboratory for his comprehensive summary talk, which is also included in these Proceedings.
Polarons
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Author : David Emin
language : en
Publisher: Cambridge University Press
Release Date : 2013
Polarons written by David Emin and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Science categories.
A distinctive introduction to the principles governing polaron science for experimental and theoretical graduate students and researchers.
Delta Doping Of Semiconductors
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Author : E. F. Schubert
language : en
Publisher: Cambridge University Press
Release Date : 1996-03-14
Delta Doping Of Semiconductors written by E. F. Schubert and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-03-14 with Science categories.
This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.
Nitride Semiconductor Devices
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Author : Hadis Morkoç
language : en
Publisher: John Wiley & Sons
Release Date : 2013-04-16
Nitride Semiconductor Devices written by Hadis Morkoç and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-16 with Technology & Engineering categories.
This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.