Delta Doping Of Semiconductors
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Delta Doping Of Semiconductors
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Author : E. F. Schubert
language : en
Publisher: Cambridge University Press
Release Date : 1996-03-14
Delta Doping Of Semiconductors written by E. F. Schubert and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-03-14 with Science categories.
This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.
Doping In Iii V Semiconductors
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Author : E. Fred Schubert
language : en
Publisher: E. Fred Schubert
Release Date : 2015-08-18
Doping In Iii V Semiconductors written by E. Fred Schubert and has been published by E. Fred Schubert this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-18 with Science categories.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Epitaxy Of Semiconductors
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Author : Udo W. Pohl
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-01-11
Epitaxy Of Semiconductors written by Udo W. Pohl and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-01-11 with Technology & Engineering categories.
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
High Magnetic Fields In The Physics Of Semiconductors Proceedings Of The 12th International Conference In 2 Volumes
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Author : Gottfried Landwehr
language : en
Publisher: World Scientific
Release Date : 1997-04-23
High Magnetic Fields In The Physics Of Semiconductors Proceedings Of The 12th International Conference In 2 Volumes written by Gottfried Landwehr and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-04-23 with categories.
This volume contains contributions presented at the 12th International Conference on High Magnetic Fields in Semiconductor Physics. In order to give an overview, 37 lecturers not only reviewed the latest results in their field, but also gave a general introduction. The rapid development of semiconductor physics and technology during the last few years has resulted in an extensive application of high magnetic fields in both fundamental and applied research; more than 160 contributed papers were presented as posters.Sixteen years after its discovery, the quantum Hall effect (QHE) is still a subject of high activity. Many new results on the fractional QHE were presented; in addition to 6 invited papers, there were 43 contributions. Another field of high activity is magneto-optics, and 49 posters were presented. Magnetotransport also turned out to be of high interest, and magnetic semiconductors played a prominent role at the conference, too.Without doubt, the availability of superconducting magnets in most laboratories contributed to the growth of semiconductor physics in high magnetic fields. Because not all experiments can be performed in fields up to 10 or 15 teslas, high magnetic field laboratories offering larger fields are indispensable. There were reports from four laboratories on present work going on at these installations.
Compound Semiconductors 1995 Proceedings Of The Twenty Second Int Symposium On Compound Semiconductors Held In Cheju Island Korea 28 August 2 September 1995
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Author : Institute of Physics Conference
language : en
Publisher: CRC Press
Release Date : 2020-10-28
Compound Semiconductors 1995 Proceedings Of The Twenty Second Int Symposium On Compound Semiconductors Held In Cheju Island Korea 28 August 2 September 1995 written by Institute of Physics Conference and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-10-28 with Science categories.
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Conducting Organic Materials And Devices
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Author : Suresh C. Jain
language : en
Publisher: Newnes
Release Date : 2011-08-09
Conducting Organic Materials And Devices written by Suresh C. Jain and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-08-09 with Technology & Engineering categories.
Conducting polymers were discovered in 1970s in Japan. Since this discovery, there has been a steady flow of new ideas, new understanding, new conducing polymer (organics) structures and devices with enhanced performance. Several breakthroughs have been made in the design and fabrication technology of the organic devices. Almost all properties, mechanical, electrical, and optical, are important in organics. This book describes the recent advances in these organic materials and devices.
Nasa Tech Briefs
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Author :
language : en
Publisher:
Release Date : 2005
Nasa Tech Briefs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology categories.
Compound Semiconductors 1996 Proceedings Of The Twenty Third Int Symposium On Compound Semiconductors Held In St Petersburg Russia 23 27 September 1996
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Author : Shur
language : en
Publisher: CRC Press
Release Date : 2020-10-28
Compound Semiconductors 1996 Proceedings Of The Twenty Third Int Symposium On Compound Semiconductors Held In St Petersburg Russia 23 27 September 1996 written by Shur and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-10-28 with Science categories.
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Ultrafast Physical Processes In Semiconductors
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Author :
language : en
Publisher: Elsevier
Release Date : 2000-10-06
Ultrafast Physical Processes In Semiconductors written by and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-10-06 with Technology & Engineering categories.
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Wide Bandgap Semiconductor Electronics And Devices
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Author : Uttam Singisetti
language : en
Publisher: World Scientific
Release Date : 2019-12-10
Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-10 with Technology & Engineering categories.
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.