Wide Bandgap Semiconductor Electronics And Devices
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Wide Bandgap Semiconductors
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Author : Kiyoshi Takahashi
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-04-12
Wide Bandgap Semiconductors written by Kiyoshi Takahashi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Technology & Engineering categories.
The p–n junction was invented in the ?rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e?orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that “synthesis of high quality GaN crystals would eventually enable p-type doping” and in 1989 he succeeded in fabricating the world’s ?rst GaN p–n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey ‘from the nitride wilderness’ to the ?rst experimental results of blue emission from GaN p–n junctions: Japan’s major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p–n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti?c, industrial and social impli- tions.
Wide Energy Bandgap Electronic Devices
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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003
Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.
Wide Bandgap Semiconductor Electronics And Devices
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Author : Uttam Singisetti
language : en
Publisher: World Scientific
Release Date : 2019-12-10
Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-10 with Technology & Engineering categories.
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Wide Bandgap Semiconductor Based Electronics
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Author : F. Ren
language : en
Publisher:
Release Date : 2020
Wide Bandgap Semiconductor Based Electronics written by F. Ren and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with TECHNOLOGY & ENGINEERING categories.
Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas.
Wide Bandgap Semiconductors For Power Electronics
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Author : Peter Wellmann
language : en
Publisher: John Wiley & Sons
Release Date : 2021-09-28
Wide Bandgap Semiconductors For Power Electronics written by Peter Wellmann and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-28 with Technology & Engineering categories.
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Wide Bandgap Power Semiconductor Packaging
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Author : Katsuaki Suganuma
language : en
Publisher: Woodhead Publishing
Release Date : 2018-05-28
Wide Bandgap Power Semiconductor Packaging written by Katsuaki Suganuma and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-28 with Technology & Engineering categories.
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. - Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance - Provides the latest research on potential solutions, with an eye towards the end goal of system integration - Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Ultra Wide Bandgap Semiconductor Materials
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Author : Meiyong Liao
language : en
Publisher: Elsevier
Release Date : 2019-06-18
Ultra Wide Bandgap Semiconductor Materials written by Meiyong Liao and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-18 with Technology & Engineering categories.
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Characterization Of Wide Bandgap Power Semiconductor Devices
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Author : Fei (Fred) Wang
language : en
Publisher:
Release Date : 2018
Characterization Of Wide Bandgap Power Semiconductor Devices written by Fei (Fred) Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with TECHNOLOGY & ENGINEERING categories.
This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.
Topics In Growth And Device Processing Of Iii V Semiconductors
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Author : S. J. Pearton
language : en
Publisher: World Scientific
Release Date : 1996
Topics In Growth And Device Processing Of Iii V Semiconductors written by S. J. Pearton and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Technology & Engineering categories.
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Modern Power Electronic Devices
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Author : Francesco Iannuzzo
language : en
Publisher: Energy Engineering
Release Date : 2020-10
Modern Power Electronic Devices written by Francesco Iannuzzo and has been published by Energy Engineering this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-10 with Technology & Engineering categories.
Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.