Wide Bandgap Power Semiconductor Packaging
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Wide Bandgap Power Semiconductor Packaging
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Author : Katsuaki Suganuma
language : en
Publisher: Woodhead Publishing
Release Date : 2018-05-28
Wide Bandgap Power Semiconductor Packaging written by Katsuaki Suganuma and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-28 with Technology & Engineering categories.
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Wide Bandgap Semiconductors For Power Electronics
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Author : Peter Wellmann
language : en
Publisher: John Wiley & Sons
Release Date : 2022-01-10
Wide Bandgap Semiconductors For Power Electronics written by Peter Wellmann and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-10 with Technology & Engineering categories.
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Characterization Of Wide Bandgap Power Semiconductor Devices
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Author : Fei Wang
language : en
Publisher: Institution of Engineering and Technology
Release Date : 2018
Characterization Of Wide Bandgap Power Semiconductor Devices written by Fei Wang and has been published by Institution of Engineering and Technology this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Technology & Engineering categories.
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.
Disruptive Wide Bandgap Semiconductors Related Technologies And Their Applications
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Author : Yogesh Kumar Sharma
language : en
Publisher: BoD – Books on Demand
Release Date : 2018-09-12
Disruptive Wide Bandgap Semiconductors Related Technologies And Their Applications written by Yogesh Kumar Sharma and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-12 with Technology & Engineering categories.
SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
Wide Bandgap Semiconductor Power Devices
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Author : B. Jayant Baliga
language : en
Publisher: Woodhead Publishing
Release Date : 2018-10-17
Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-17 with Technology & Engineering categories.
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
The Packaging Of Power Semiconductor Devices
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Author : Constantine A. Neugebauer
language : en
Publisher: CRC Press
Release Date : 1986
The Packaging Of Power Semiconductor Devices written by Constantine A. Neugebauer and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Science categories.
2018 Ieee 30th International Symposium On Power Semiconductor Devices And Ics Ispsd
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Author : IEEE Staff
language : en
Publisher:
Release Date : 2018-05-13
2018 Ieee 30th International Symposium On Power Semiconductor Devices And Ics Ispsd written by IEEE Staff and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-13 with categories.
ISPSD is the premier annual IEEE conference in the area of power semiconductor devices and ICs The conference covers a wide range of technical topics including wide bandgap semiconductor materials and devices, silicon power devices, power ICs, device physics and modeling, device packaging, and power electronics applications
Technology Report Current Developments In 3d Power Packaging With Focus On Embedded Substrate Technologies 2015
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Author :
language : en
Publisher:
Release Date : 2015-03-10
Technology Report Current Developments In 3d Power Packaging With Focus On Embedded Substrate Technologies 2015 written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-03-10 with categories.
This report is the Phase 2 report on 3D packaging of power sources and is a follow up to the previous report published by the PSMA Packaging Committee. The report begins with a discussion of PCB embedding technologies which are now in high volume production and together with 3D packaging technology predominately provide a significant performance and size reduction enhancement opportunity rather than a means to reduce costs. Also presented is information on high temperature die and component attachment technologies that are evolving rapidly in the research labs. However, high power-density component embedding and 3D packaging of power semiconductors also have to overcome a 'thermal barrier" - since it is more challenging to remove heat generated within the body of a 3D integrated system than from a planar surface. To execute an embedded power design is very dependent on the availability of passive components optimized for PCB embedding and the report includes some of the available sources. The report also includes the results of a worldwide literature search of R&D published by participating organizations. These technologies, combined with wide-bandgap semiconductor devices will literally re-vitalize the entire power electronics infrastructure block by block, module by module, for the twenty-first century.
Short Circuit Requirements Of Power Converters Based Upon Wide Bandgap Semiconductors
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Author : Douglas Pappis
language : en
Publisher: BoD – Books on Demand
Release Date : 2021-01-01
Short Circuit Requirements Of Power Converters Based Upon Wide Bandgap Semiconductors written by Douglas Pappis and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-01 with Technology & Engineering categories.
In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Materials For High Temperature Semiconductor Devices
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Author : National Research Council
language : en
Publisher: National Academies Press
Release Date : 1995-09-14
Materials For High Temperature Semiconductor Devices written by National Research Council and has been published by National Academies Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-09-14 with Technology & Engineering categories.
Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.