Extended Defects In Semiconductors


Extended Defects In Semiconductors
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Extended Defects In Semiconductors


Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12

Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.


A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.



Point And Extended Defects In Semiconductors


Point And Extended Defects In Semiconductors
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Author : Giorgio Benedek
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29

Point And Extended Defects In Semiconductors written by Giorgio Benedek and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.


The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.



Extended Defects In Semiconductors


Extended Defects In Semiconductors
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Author :
language : en
Publisher:
Release Date : 1997

Extended Defects In Semiconductors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.




Extended Defects In Semiconductors


Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher:
Release Date : 2007

Extended Defects In Semiconductors written by D. B. Holt and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.




A Contribution To The Study Of Extended Defects In Semiconductors


A Contribution To The Study Of Extended Defects In Semiconductors
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Author : Nirmal David Theodore
language : en
Publisher:
Release Date : 1991

A Contribution To The Study Of Extended Defects In Semiconductors written by Nirmal David Theodore and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.




Extended Defects In Germanium


Extended Defects In Germanium
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Author : Cor Claeys
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-12-29

Extended Defects In Germanium written by Cor Claeys and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-12-29 with Technology & Engineering categories.


The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.



Defect Interaction And Clustering In Semiconductors


Defect Interaction And Clustering In Semiconductors
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Author : Sergio Pizzini
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2001-12-12

Defect Interaction And Clustering In Semiconductors written by Sergio Pizzini and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-12-12 with Technology & Engineering categories.


Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.



Proceedings Of The Second Symposium On Defects In Silicon


Proceedings Of The Second Symposium On Defects In Silicon
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Author : W. Murray Bullis
language : en
Publisher:
Release Date : 1991

Proceedings Of The Second Symposium On Defects In Silicon written by W. Murray Bullis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Semiconductors categories.




Physical Chemistry Of Semiconductor Materials And Processes


Physical Chemistry Of Semiconductor Materials And Processes
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Author :
language : en
Publisher: John Wiley & Sons
Release Date : 2015-08-17

Physical Chemistry Of Semiconductor Materials And Processes written by and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-17 with Science categories.


The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.



Defects And Impurities In Silicon Materials


Defects And Impurities In Silicon Materials
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Author : Yutaka Yoshida
language : en
Publisher: Springer
Release Date : 2016-03-30

Defects And Impurities In Silicon Materials written by Yutaka Yoshida and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Technology & Engineering categories.


This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.