Applications Of Silicon Germanium Heterostructure Devices
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Applications Of Silicon Germanium Heterostructure Devices
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Author : C.K Maiti
language : en
Publisher: CRC Press
Release Date : 2001-07-20
Applications Of Silicon Germanium Heterostructure Devices written by C.K Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-07-20 with Science categories.
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Circuits And Applications Using Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Circuits And Applications Using Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.
Technology Computer Aided Design For Si Sige And Gaas Integrated Circuits
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Author : G.A. Armstrong
language : en
Publisher: IET
Release Date : 2007-11-30
Technology Computer Aided Design For Si Sige And Gaas Integrated Circuits written by G.A. Armstrong and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-11-30 with Computers categories.
The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.
Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Strained Si Heterostructure Field Effect Devices
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Author : C.K Maiti
language : en
Publisher: CRC Press
Release Date : 2007-01-11
Strained Si Heterostructure Field Effect Devices written by C.K Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-01-11 with Science categories.
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Measurement And Modeling Of Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Measurement And Modeling Of Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Sige Ge And Related Compounds 3 Materials Processing And Devices
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Author : David Harame
language : en
Publisher: The Electrochemical Society
Release Date : 2008
Sige Ge And Related Compounds 3 Materials Processing And Devices written by David Harame and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Fabless Semiconductor Manufacturing
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Author : Chinmay K. Maiti
language : en
Publisher: CRC Press
Release Date : 2022-11-17
Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-17 with Technology & Engineering categories.
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Proceedings Of The International Conference On Microelectronics Computing Communication Systems
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Author : Vijay Nath
language : en
Publisher: Springer
Release Date : 2017-12-29
Proceedings Of The International Conference On Microelectronics Computing Communication Systems written by Vijay Nath and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-29 with Technology & Engineering categories.
This volume comprises select papers from the International Conference on Microelectronics, Computing & Communication Systems(MCCS 2015). Electrical, Electronics, Computer, Communication and Information Technology and their applications in business, academic, industry and other allied areas. The main aim of this volume is to bring together content from international scientists, researchers, engineers from both academia and the industry. The contents of this volume will prove useful to researchers, professionals, and students alike.