Device Characteristics Of The Pnp Algaas

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Device Characteristics Of The Pnp Algaas

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Author :
language : en
Publisher:
Release Date : 2000

Device Characteristics Of The Pnp Algaas written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.

The authors have demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub C} and a negligible {triangle}E{sub V}, and this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (Eg = 1.20 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs of comparable collector thickness and doping level.

Compound Semiconductor Power Transistors Ii And

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Author : R. F. Kopf
language : en
Publisher: The Electrochemical Society
Release Date : 2000

Compound Semiconductor Power Transistors Ii And written by R. F. Kopf and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.

Iii Nitride Based Semiconductor Electronics And Optical Devices And Thirty Fourth State Of The Art Program On Compound Semiconductors Sotapocs Xxxiv

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Author : F. Ren
language : en
Publisher: The Electrochemical Society
Release Date : 2001

Iii Nitride Based Semiconductor Electronics And Optical Devices And Thirty Fourth State Of The Art Program On Compound Semiconductors Sotapocs Xxxiv written by F. Ren and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Technology & Engineering categories.

The Aluminum Free P N P Ingaasn Double Heterojunction Bipolar Transistors

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Author :
language : en
Publisher:
Release Date : 2000

The Aluminum Free P N P Ingaasn Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.

The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D.C. characteristics with a current gain ([beta]) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

High Speed Heterostructure Devices

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Author :
language : en
Publisher: Academic Press
Release Date : 1994-07-06

High Speed Heterostructure Devices written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-07-06 with Technology & Engineering categories.

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed Offers a complete, three-chapter review of resonant tunneling Provides an emphasis on circuits as well as devices

Wide Energy Bandgap Electronic Devices

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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003

Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.

Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

High Speed Compound Semiconductor Devices For Wireless Applications And State Of The Art Program On Compound Semiconductors Xxxiii

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Author : A. G. Baca
language : en
Publisher: The Electrochemical Society
Release Date : 2000

High Speed Compound Semiconductor Devices For Wireless Applications And State Of The Art Program On Compound Semiconductors Xxxiii written by A. G. Baca and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.

The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR

Minority Carrier Properties In Gallium Arsenide Characterized By Dc And High Frequency Characteristics Of Heterojunction Bipolar Transistors

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Author : Dong Myong Kim
language : en
Publisher:
Release Date : 1993

Minority Carrier Properties In Gallium Arsenide Characterized By Dc And High Frequency Characteristics Of Heterojunction Bipolar Transistors written by Dong Myong Kim and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.

The Physics Of Submicron Semiconductor Devices

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Author : Harold L. Grubin
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11

The Physics Of Submicron Semiconductor Devices written by Harold L. Grubin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Handbook Of Compound Semiconductors

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Author : Paul H. Holloway
language : en
Publisher: Cambridge University Press
Release Date : 2008-10-19

Handbook Of Compound Semiconductors written by Paul H. Holloway and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-10-19 with Technology & Engineering categories.

This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.