High Speed Heterostructure Devices
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High Speed Heterostructure Devices
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Author : Patrick Roblin
language : en
Publisher: Cambridge University Press
Release Date : 2002-03-07
High Speed Heterostructure Devices written by Patrick Roblin and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-03-07 with Technology & Engineering categories.
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
High Speed Heterostructure Devices
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Author :
language : en
Publisher: Academic Press
Release Date : 1994-07-06
High Speed Heterostructure Devices written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-07-06 with Technology & Engineering categories.
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed Offers a complete, three-chapter review of resonant tunneling Provides an emphasis on circuits as well as devices
Semiconductors And Semimetals
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Author : Robert K. Willardson
language : en
Publisher:
Release Date : 1994
Semiconductors And Semimetals written by Robert K. Willardson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with categories.
Physics And Simulation Of High Speed Heterostructure Devices
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Author : Isik Cem F. Kizilyalli
language : en
Publisher:
Release Date : 1988
Physics And Simulation Of High Speed Heterostructure Devices written by Isik Cem F. Kizilyalli and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with categories.
Measurement And Modeling Of Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Measurement And Modeling Of Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Semiconductor Heterostructure Devices
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Author : Masayuki Abe
language : en
Publisher: CRC Press
Release Date : 1989
Semiconductor Heterostructure Devices written by Masayuki Abe and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Bipolar transistors categories.
A highly technical treatment of specialized transistors. Abe examines high electron mobility transistors, detailing their physical principles, operational characteristics, and analog and digital applications. Yokoyama describes some resonant tunnelling devices: hot electron and bipolar transistors, and barriers using InGaAs-based material. Both authors are from Fujitsu Laboratories Ltd. in Atsugi, Japan. A very small book for the price, and on acid paper as well. Annotation copyrighted by Book News, Inc., Portland, OR
Heterostructure Opto Electronic And High Speed Devices
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Author : Professional Group E 3, Microelectronics and Semiconductor Devices and E 13, Optics and Infrared
language : en
Publisher:
Release Date : 1984
Heterostructure Opto Electronic And High Speed Devices written by Professional Group E 3, Microelectronics and Semiconductor Devices and E 13, Optics and Infrared and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with categories.
High Speed Electronics
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Author : Bengt Källbäck
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-08
High Speed Electronics written by Bengt Källbäck and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-08 with Technology & Engineering categories.
In the past, a number of Satellite Conferences have been held in con nection with the International Conference on Physics of Semiconductors, covering selected fields of interest. In 1986, when the main conference was held in Stockholm, Sweden, new. phenomena had to be discussed: super lattices, hot 'electron phenomena and new device structures for high-speed applications. The aim was to select topics which would be of interest to physicists as well as to electronics engineers. Therefore a Satellite Con ference on H!gh-Speed Electronics, Basic Physical Phenomena and Device Principles, was arranged at Saltjobaden, a coastal resort near Stockholm. An organizing committee was established after the first suggestion made by Professor Grimmeiss from the University of Lund, Sweden, and some preliminary discussions on the Conference format. A Program Committee was established to be responsible for the further selection of the invited talks, the regular papers and poster presentation. The aim was to have a broad spectrum of contributions to attract physicists as well as device oriented engineers and to stimulate discussions among the participants. These Proceedings contain all oral and poster presentations, with em phasis on the invited talks, which give a competent overview of the field. The fast publication by Springer-Verlag has permitted the presentation of an up-to-date survey of the principles of high-speed electronics. Incorpo ration in the Springer Series in Electronics and Photonics will enable the book to be distributed worldwide and to reach all interested scientists.
Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.